Anti-EMI SGT device

A device and conductive type technology, applied in the field of SGT devices, can solve the problems of increasing the possibility of voltage shock dv/dt failure of the device and EMI noise, electromagnetic pollution of components and equipment, parasitic triode turn-on, etc., to reduce Miller capacitance Cgd, reduce EMI electromagnetic radiation noise, reduce the effect of switching oscillation
CN112002686APending Publication Date: 2020-11-27VANGUARD SEMICON CORP
0 Cites 4 Cited by

Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Applications(China)
Current Assignee / Owner
VANGUARD SEMICON CORP
Publication Date
2020-11-27

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention discloses an anti-EMI SGT device. The device comprises a substrate of a first conductive type, an epitaxial layer of the first conductive type which is positioned on the upper surface ofthe substrate of the first conductive type, a trench gate structure located in the epitaxial layer of the first conductive type, a trench source structure located above the side surface of the epitaxial layer of the first conductive type, a first dielectric layer and a heavily doped body region of the first conductive type located between the trench source structure and the epitaxial layer of thefirst conductive type, and a second dielectric layer located above the trench gate structure, wherein the trench gate structure comprises a gate trench, and a shielding gate and a polycrystalline silicon gate which are positioned in the gate trench; the trench source structure includes a source trench and a source metal located within the source trench. According to the device disclosed in the invention, the SGT source-drain capacitance Cds is increased, the switching oscillation is reduced, and therefore the voltage oscillation dv / dt failure possibility and EMI noise of the device are reduced.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to the technical field of semiconductor devices, in particular to an anti-EMI SGT device. Background technique

[0002] Shielded Gate Trench MOSFET (SGT-MOSFET for short) power devices have been widely used in the prior art. At the same time, MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) are widely used in various fields such as switching power supplies, automotive electronics, and motor drives due to their advantages of large input resistance, easy driving, simple control, and high frequency characteristics. When it is used as a power switch tube to control energy flow and conversion, it works in a fast switching transition state, facing a high voltage oscillation dv / dt and current oscillation di / dt between the drain and source, on the one hand the high The voltage shock dv / dt is superimposed on the device, which is easy to cause the parasitic transistor to turn on and cause the device to fail; on the other hand, ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More