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Solar cell and manufacturing method thereof

A solar cell and manufacturing method technology, applied in circuits, electrical components, photovoltaic power generation and other directions, can solve the problems of silicon substrate cracks, reduce the quality of solar cells, etc., and achieve the effect of avoiding damage

Inactive Publication Date: 2020-12-25
QINGHAI HUANGHE HYDROPOWER DEV +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the process of sintering the aluminum paste, the high temperature during sintering can cause cracks to appear on the surface of the silicon substrate, thereby reducing the quality of the solar cell

Method used

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  • Solar cell and manufacturing method thereof
  • Solar cell and manufacturing method thereof
  • Solar cell and manufacturing method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] This embodiment provides a method for manufacturing a solar cell, such as figure 1 as well as Figure 2a to Figure 2d As shown, the preparation method includes:

[0043] Step S1 , after boron doping A is performed on the back surface 1 b of the P-type silicon substrate 1 , a protective layer 2 is formed on the back surface 1 b. Specifically, after boron doping A on the back side 1b is performed using a boron doping A furnace, a silicon nitride layer is deposited on the back side 1b after boron doping A by using a plasma-enhanced chemical vapor deposition process, so as to The protective layer 2 is formed.

[0044] Step S2, after removing the non-essentially doped regions formed on the front side 1a and the side 1b of the P-type silicon substrate 1 (not shown in the figure), forming a phosphorus barrier on the back 1b and the side 1b Ion isolation layer 3. Specifically, after using an alkaline solution to etch the non-essentially doped regions formed on the back 1b a...

Embodiment 2

[0056] Different from Embodiment 1, in this embodiment, before removing the protective layer 2 and the isolation layer 3, the manufacturing method further includes:

[0057] Step S21, such as Figure 3a As shown, the region where the front electrode 11 is to be formed on the front surface 1a is doped twice with phosphorus to form a selective emission region B.

[0058] In this embodiment, the protective layer 2 and the isolation layer 3 are removed after the selective emission region B is formed. In this embodiment, the front electrode 11 will be formed on the selective emission region B, thereby forming a selective emitter. Such a method is beneficial to increase the open circuit voltage of the solar cell, reduce the recombination probability of minority carriers, and further improve the photoelectric conversion efficiency of the solar cell.

[0059] Preferably, in order to further improve the photoelectric conversion efficiency of the solar cell, in this embodiment, before...

Embodiment 3

[0061] Different from Embodiment 1, in this embodiment, before forming the back electrode 12 on the back surface 1b, the manufacturing method further includes:

[0062] Such as Figure 4a As shown, an aluminum oxide layer and a silicon nitride layer are sequentially stacked and deposited on the back surface 1 b by using a plasma enhanced chemical vapor deposition process to form a passivation layer 5 .

[0063] In this embodiment, after the passivation layer 5 is formed, as Figure 4b As shown, silver paste containing a corrosive solvent is printed on the passivation layer 5, and the silver paste is cut through the passivation layer 5 and then contacts the back surface 1b, and then the silver paste is solidified to The back electrode 12 is formed.

[0064] In this embodiment, a PERC (Passivated Emitter and Rear Cell: Passivated Emitter and Rear Cell) cell structure is formed in the above manner. The PERC cell structure can reduce the recombination probability of minority ca...

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Abstract

The invention discloses a method for manufacturing a solar cell. The mtehod comprises the following steps: performing boron doping on the back surface of a P type silicon substrate, and forming a protective layer on the back surface; removing unnecessary doped regions formed on the front surface and the side surface of the P type silicon substrate, and then forming isolation layers for blocking phosphorus ions on the back surface and the side surface of the P type silicon substrate; performing phosphorus doping on the front surface of the P type silicon substrate; removing the isolation layersand the protection layer; forming a front electrode on the front surface; and forming a back surface electrode on the back surface. The invention discloses a solar cell. According to the invention, the problem of cracks on the surface of the silicon substrate caused by high temperature when the aluminum back field region is formed in the prior art is solved.

Description

technical field [0001] The invention relates to the technical field of manufacturing solar cells, in particular to a cell manufacturing method capable of reducing the possibility of damage to pn junctions. Background technique [0002] The more important link in the manufacturing process of silicon solar cells is the step of performing phosphorus doping on the P-type silicon substrate to form a pn junction. However, due to the limitations of the existing doping process itself, it cannot be guaranteed that the dopant ions only diffuse in the target region. Therefore, in the actual doping process, it can be found that the dopant ions not only diffuse in the target area (for example: front side), but also diffuse on other surfaces of the P-type silicon substrate (for example: back side or side), thereby forming unnecessary doping Miscellaneous area. [0003] If the non-essential doping region is kept, the photo-generated electrons collected on the front side of the solar cell...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0224
CPCH01L31/022441H01L31/1804Y02E10/547Y02P70/50
Inventor 常纪鹏张敏李得银王冬冬陈燕杨超陈丹石慧君马岩青陶延宏
Owner QINGHAI HUANGHE HYDROPOWER DEV