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A method for preparing chromium-doped single-layer tungsten disulfide two-dimensional crystal

A two-dimensional crystal, tungsten disulfide technology, used in chemical instruments and methods, inorganic chemistry, tungsten compounds, etc., can solve the problems of easy deliquescence and unstable properties, and achieve good crystallinity, low cost, and huge application prospects. Effect

Active Publication Date: 2021-11-05
YANSHAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In the study of transition metal chromium doped two-dimensional chalcogenides, the selection of Cr source is a big problem, Cr 2 o 3 The chemical properties are extremely stable, and there is no change even if hydrogen is introduced at high temperature, while CrCl 2 , CrCl 3 Although its melting point is very low and it is easy to evaporate, it is easily deliquescent in the air and its properties are unstable.

Method used

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  • A method for preparing chromium-doped single-layer tungsten disulfide two-dimensional crystal
  • A method for preparing chromium-doped single-layer tungsten disulfide two-dimensional crystal
  • A method for preparing chromium-doped single-layer tungsten disulfide two-dimensional crystal

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Embodiment 1

[0031] Include the following steps:

[0032] 1. Clean the SiO2 / Si substrate ultrasonically with acetone and ethanol, and dry it with N2;

[0033] 2. Use argon to clean the quartz tube and corundum boat of the multi-temperature zone tube furnace;

[0034] 3. Combine S element and WO 3 The mixture of , NaCl and Cr are respectively placed in the upstream and downstream of the multi-temperature zone tube furnace with corundum boats, and the heating and vulcanization reaction is carried out;

[0035] 4. In step 3, the upstream temperature of the multi-temperature zone tube furnace is raised to 150°C, and the downstream temperature is raised to 940°C;

[0036] 5. Keep the flow rate of argon gas in the multi-temperature zone tube furnace at 20 sccm, and the pressure inside the tube at 50 Pa;

[0037] 6. Control the heating time of the vulcanization reaction in steps 3 and 4 to be 30 minutes, and the time for the vulcanization reaction to be 25 minutes, and then naturally cool to r...

Embodiment 2

[0039] Include the following steps:

[0040] 1. Clean the SiO2 / Si substrate ultrasonically with acetone and ethanol, and dry it with N2;

[0041] 2. Use argon to clean the quartz tube and corundum boat of the multi-temperature zone tube furnace;

[0042] 3. Put the S element, WO3, NaCl mixture and Cr respectively in the upstream and downstream of the multi-temperature zone tube furnace with a corundum boat, for heating and vulcanization reaction;

[0043] 4. In step 3, the upstream temperature of the multi-temperature zone tube furnace is raised to 210°C, and the downstream temperature is raised to 980°C;

[0044] 5. Keep the flow rate of argon gas in the multi-temperature zone tube furnace at 50 sccm, and the pressure inside the tube at 200 Pa;

[0045] 6. Control the heating time of the vulcanization reaction in steps 3 and 4 to be 40 minutes, and the time for the vulcanization reaction to be 50 minutes, and then naturally cool to room temperature to obtain a Cr-doped sing...

Embodiment 3

[0047] Include the following steps:

[0048] 1. Ultrasonic cleaning of SiO with acetone and ethanol 2 / Si substrate, and with N 2 blow dry;

[0049] 2. Use argon to clean the quartz tube and corundum boat of the multi-temperature zone tube furnace;

[0050] 3. Combine S element and WO 3The mixture of , NaCl and Cr are respectively placed in the upstream and downstream of the multi-temperature zone tube furnace with corundum boats, and the heating and vulcanization reaction is carried out;

[0051] 4. In step 3, the upstream temperature of the multi-temperature zone tube furnace is raised to 170°C, and the downstream temperature is raised to 900°C;

[0052] 5. Keep the flow rate of argon gas in the multi-temperature zone tube furnace at 25 sccm, and the pressure inside the tube at 72 Pa;

[0053] 6. Control the heating time of the vulcanization reaction in steps 3 and 4 to be 35 minutes, and the time for the vulcanization reaction to be 40 minutes, and then naturally cool ...

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Abstract

The invention relates to a method for preparing a chromium-doped single-layer tungsten disulfide two-dimensional crystal, which belongs to the technical field of inorganic semiconductor nanomaterial preparation, and comprises the following steps: using Cr, NaCl, WO 3 , S as raw material, Si / SiO in the multi-temperature zone tube furnace 2 as the base, through the S element to WO 3 and Cr are vulcanized at the same time, and jointly participate in bond formation, so that Cr replaces part of WS 2 The position of W in a single-layer two-dimensional crystal, a Cr-doped single-layer WS prepared by chemical vapor deposition 2 two-dimensional crystal. The method of the present invention has simple steps, convenient operation, fast synthesis speed and low cost, and the prepared Cr-doped monolayer WS 2 Two-dimensional crystals have good crystallinity and stable chemical and thermodynamic properties.

Description

technical field [0001] The invention relates to a method for preparing a chromium-doped single-layer tungsten disulfide two-dimensional crystal, which belongs to the technical field of preparation of inorganic semiconductor nanometer materials. Background technique [0002] The emergence of graphene has opened up a new field of research on two-dimensional materials. A large number of new two-dimensional materials have entered the field of vision of researchers. Two-dimensional transition metal chalcogenides are one representative class. Atomic level thickness, tunable bandgap width, high photoelectric response efficiency, and good mobility make it have great application potential in optoelectronic devices, electrocatalysis and other fields. Transition metal doping is an effective strategy to realize the performance tuning of two-dimensional chalcogenides. The preparation of transition metal-doped two-dimensional chalcogenides has always been a difficult problem in process...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G41/00
CPCC01G41/00C01P2002/72C01P2002/82C01P2004/04C01P2004/20
Inventor 聂安民康梦克向建勇牟从普柳忠元田永君
Owner YANSHAN UNIV