Structural height calculation method for focused ion beam assisted deposition processing

A focused ion beam and assisted deposition technology, which is applied in computer-aided design, calculation, design optimization/simulation, etc., can solve problems such as etching, reduction of precursor gas concentration, and inability to accurately calculate the height of the final processing structure to achieve accurate calculation. Effect

Active Publication Date: 2021-01-12
SOUTHEAST UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] For example, the application number is: CN201911078775.X, and the application name is: In the patent application of a method for determining the profile of a focused ion beam-assisted deposition structure, a method for calculating the profile of a focused ion beam-assisted deposition structure based on cellular automata has been disclosed , however, unresolved shadow effects will have an impact on post-processing structures
Specifically, under the shadow effect, the concentration of the precursor gas is severely reduced. If the same processing parameters as the existing structure are still selected, it may make it impossible to deposit materials in the shielded area and cause etching.
Therefore, the existing calculation method cannot accurately calculate the final processing structure height

Method used

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  • Structural height calculation method for focused ion beam assisted deposition processing
  • Structural height calculation method for focused ion beam assisted deposition processing
  • Structural height calculation method for focused ion beam assisted deposition processing

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Experimental program
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Effect test

Embodiment 1

[0059] Research objective: There is a cube structure with a structure size of 0.3μm×0.3μm×0.6μm. The height h between the gas phase tube and the sample is 150 μm, and the offset distance b s = 410 μm. The processed structure is 0.3 μm away from the existing structure. The total processing time is 120s. Reproduces the shadow effect of machined structures.

[0060] S1. Add the following attributes to the precursor gas diffusion model: whether the diffusion index, the precursor gas adsorption probability. The resolution of the cells in the precursor gas diffusion model is 10nm×10nm×10nm.

[0061] S2. Capture the outline of the existing structure in the continuous cellular automaton, and set the diffusion index corresponding to the element attribute in the precursor gas diffusion model to 0. In the precursor gas diffusion model, i 1 = 0, i 2 =30,j 1 = 45,j 2 =75.

[0062] S3. Determine the shadow blocking area according to the existing structure outline and the parameter...

Embodiment 2

[0079] Research objective: There is a cube structure with a structure size of 0.3μm×0.3μm×0.6μm. The height h between the gas phase tube and the sample is 150 μm, and the offset distance b s = 150 μm. The processed structure is 0.3 μm away from the existing structure. The total processing time is 120s. Reproduces the shadow effect of machined structures.

[0080] S1. Add the following attributes to the precursor gas diffusion model: whether the diffusion index, the precursor gas adsorption probability. The resolution of the cells in the precursor gas diffusion model is 10nm×10nm×10nm.

[0081] S2. Capture the outline of the existing structure in the continuous cellular automaton, and set the diffusion index corresponding to the element attribute in the precursor gas diffusion model to 0. In the precursor gas diffusion model, i 1 = 0,i 2 =30,j 1 = 45,j 2 =75.

[0082] S3. Determine the shadow blocking area according to the existing structure outline and the parameters...

Embodiment 3

[0103] Research objective: There is a cube structure with a structure size of 0.3μm×0.3μm×0.6μm. The height h between the gas phase tube and the sample is 150 μm, and the offset distance b s = 410 μm. The processed structure is 0.5 μm away from the existing structure. Reproduces the shadow effect of machined structures.

[0104] S1. Add the following attributes to the precursor gas diffusion model: whether the diffusion index, the precursor gas adsorption probability. The resolution of the cells in the precursor gas diffusion model is 10nm×10nm×10nm.

[0105] S2. Capture the outline of the existing structure in the continuous cellular automaton, and set the diffusion index corresponding to the element attribute in the precursor gas diffusion model to 0. In the precursor gas diffusion model, i 1 = 0,i 2 =30,j 1 = 45,j 2 =75.

[0106] S3. Determine the shadow blocking area according to the existing structure outline and the parameters of the gas phase tube. with struct...

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Abstract

The invention discloses a structural height calculation method for focused ion beam assisted deposition processing. The method comprises the following steps: adding the following attributes into a precursor gas diffusion model: diffusion index if_diff and precursor gas adsorption probability pres; capturing the outline of the existing structure in the continuous cellular automaton, and setting whether the diffusion index of the unit attribute corresponding to the outline in the precursor gas diffusion model is 0 or not; determining a shadow shielding area according to the existing structural contour and the gas phase tube parameters; generating a shadow shielding area function in the shadow shielding area, and changing the adsorption probability of the precursor gas; in the precursor gas diffusion model, precursor gas adsorption, diffusion, decomposition and self-desorption are calculated respectively; generating precursor gas distribution in an ion beam irradiation area under a shadoweffect; calculating the condition size of the processing structure affected by the shadow effect; and visualizing the shadow effect.

Description

technical field [0001] The invention relates to the field of process design in focused ion beam processing of MEMS microelectromechanical systems, in particular to a structure height calculation method for focused ion beam assisted deposition processing. Background technique [0002] Focused Ion Beam Induced Deposition (FIBID for short) processing technology is an important MEMS processing method. It uses a liquid ion source to emit a beam that is accelerated and focused as the incident beam, which can be used for micro-nano processing of materials and devices such as etching, deposition, and ion implantation. FIB technology has rich functions, and because of its flexible processing characteristics, it has unique advantages in the fields of micro-nano structure preparation and material analysis, and has been widely used. The precursor gas is introduced into the vacuum chamber through the gas phase tube, and it is adsorbed on the surface of the substrate. Then the high-ener...

Claims

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Application Information

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IPC IPC(8): G06F30/20G06F113/08G06F111/08G06F119/02
CPCG06F30/20G06F2113/08G06F2111/08G06F2119/02
Inventor 幸研方晨吴国荣
Owner SOUTHEAST UNIV
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