Molybdenum target welding method

Abstract

The invention provides a molybdenum target welding method. The molybdenum target welding method comprises the following steps that first, solder is placed on the solder side of a heated back plate andthe solder side of a heated molybdenum target respectively; second, the solder is evenly distributed on the solder side of the back plate and the solder side of the molybdenum target; third, surfacetreatment is carried out on the solder side of the molybdenum target by using a wire wheel brush, wherein the solder is uniformly distributed on the molybdenum target; fourth, ultrasonic infiltrationtreatment is independently carried out on the solder which is uniformly distributed on the solder side of the back plate in the second step and the solder on the solder side of the molybdenum target after surface treatment in the third step; and fifth, brazing welding is carried out on the back plate and the molybdenum target subjected to ultrasonic infiltration treatment. According to the molybdenum target welding method, surface treatment is conducted on the solder side coated with the solder, the infiltration effect of the solder is improved, and therefore it is guaranteed that the weldingrate of combination between the back plate and the molybdenum target is larger than or equal to 99% in the brazing welding process, and the molybdenum target welding method is particularly suitable for the molybdenum target with the diameter larger than or equal to 400 millimeters.

Description

technical field [0001] The invention belongs to the technical field of magnetron sputtering, and relates to a welding method of a target assembly, in particular to a molybdenum target welding method. Background technique [0002] As the preparation of semiconductor integrated circuit chips develops toward larger dimensions, the size of the sputtering target and the sputtering power also increase accordingly. The requirements for the microstructure of the sputtering target and the connection between the target and the backplane are also getting higher and higher. The connection technology between the large-area target (diameter ≥ 400mm) and the backplane has become a key technology for the preparation of target components. [0003] The back plate can play a supporting role in the target component assembly and sputtering machine, and has the effect of conducting heat. The material used as the backplane needs to have sufficient strength, and needs to have good thermal and elec...

AI Technical Summary

Problems solved by technology

[0009] The above welding method requires at least two sets of ultrasonic welding equipment, and it is difficult to guarantee the consistency of ultrasonic treatment of each welding equipment; not only is it difficult to guarantee the effect of ultrasonic treatment, but also increases the cost of welding treatment

[0010] Large-sized molybdenum targets (diameter ≥ 400mm) have high hardness and are not suitable for welding such as hot isostatic pressing; conventional brazing welding will cause large temperature differences in different areas of the target and are prone to large-area Areas with poor wetting, making large molybdenum targets easy to desolder from the backplane