Method for manufacturing fine structure and apparatus for manufacturing fine structure

A manufacturing method and structure technology, which are applied to instruments, optical components, vacuum evaporation coating, etc., can solve the problems of low etching rate, reduced productivity, and inability to perform etching processing, and achieve increased etching rate, increased productivity, and improved etching. Excellent speed effect

Pending Publication Date: 2021-01-19
KONICA MINOLTA INC
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in order to increase the size and number of plasma sources, it is necessary to increase the size of the matching box required for generating plasma.
[0004] In addition, since conventional etching equipment only has an etching function, it is necessary to prepare a separate film formation equipment when film formation is required, which also leads to a decrease in productivity.
[0005] On the other hand, in a vapor deposition apparatus utilizing the IAD (Ion Assisted Deposition) method, since only argon (Ar) or oxygen (O 2 ), so when using such argon (Ar) or oxygen (O 2 ) gas for etching, the etching rate is very small, and the etching process cannot be performed

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for manufacturing fine structure and apparatus for manufacturing fine structure
  • Method for manufacturing fine structure and apparatus for manufacturing fine structure
  • Method for manufacturing fine structure and apparatus for manufacturing fine structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0214] [Fabrication of Dielectric Multilayer Film (Fine Structure) 1]

[0215] On the glass base material TAFD5G (manufactured by HOYA Co., Ltd.: refractive index 1.835), SiO will be used 2 (Manufactured by Merck Corporation), using OA600 (manufactured by Canon Photoelectric Co., Ltd.) for the low-refractive index layer: Ta 2 o 5 , TiO, Ti 2 o 5 The high-refractive index layer of the mixture) was laminated to a predetermined film thickness using the IAD method under the following conditions according to the layer numbers 1 to 3 in Table I. Next, as using TiO 2 The functional layer (layer number 4) and the uppermost layer (layer number 5) were vapor-deposited by the IAD method so that the sodium content became 5% by mass to form the uppermost layer, and the layer number 5 described in Table 1 was obtained. Dielectric multilayer film before pores.

[0216]

[0217] (chamber conditions)

[0218] Heating temperature 370°C

[0219] Start vacuum 1.33×10 －3 Pa

[0220] (Eva...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The present invention addresses the problem of providing a method for manufacturing a fine structure and an apparatus for manufacturing a fine structure, the method and apparatus having excellent etching rate and being capable of improving productivity. The method for manufacturing a fine structure according to the present invention is a method for manufacturing a fine structure by etching, and ischaracterized in that an IAD (ion assisted deposition) device (1) is used to introduce a reactive gas into a plasma source (7) in a chamber (2) of the IAD device (1) and etch the reactive gas.

Description

technical field [0001] The present invention relates to a method for producing a fine structure and an apparatus for producing a fine structure, and in particular, to a method for producing a fine structure that is excellent in etching rate and can improve productivity, and the like. Background technique [0002] Conventionally, a plasma generation source is installed in an etching apparatus, and in order to enlarge the processing area, it is necessary to increase the matching box and the coil required for plasma generation. However, in practice, it is impossible to increase the size of the matching box, etc., and the processing area is about 8 inches, and it is difficult to increase productivity. [0003] Specifically, in the device described in Patent Document 1, in order to increase the size of the target, it is necessary to increase the size of the electrode as the plasma source. Therefore, in order to cope with the increase in the size of the wafer, in addition to the c...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C14/02C23C14/26C23C14/30C23C14/58C23C14/56G02B1/115
CPCC23C14/022C23C14/26C23C14/30C23C14/221C23C14/5833C23C14/5873C23C14/564G02B1/115
Inventor水町靖多田一成粕谷仁一
OwnerKONICA MINOLTA INC