Semiconductor structure and manufacturing method thereof

Abstract

The embodiment of the invention relates to a semiconductor structure and a manufacturing method thereof, and the manufacturing method of the semiconductor structure comprises the steps: providing a substrate which is internally provided with a trench; forming a first isolation layer on the side walls and the bottom of the trench by adopting thermal atomic layer deposition; and forming a second isolation layer on the surface of the first isolation layer, and filling the trench with the second isolation layer, wherein the process of forming the second isolation layer comprises at least one plasma enhanced atomic layer deposition process. The method is beneficial to reducing the leakage current of the semiconductor structure and improving the electrical performance and yield of the semiconductor structure.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor structure and a manufacturing method thereof. Background technique [0002] With the advancement of semiconductor manufacturing technology and the continuous improvement of people's demand for the convenience of electronic devices, semiconductor structures are widely used in digital circuits and analog circuits, and the high integration and miniaturization of circuits has become the current development trend. As the size of semiconductor devices shrinks, isolation structures in the devices become more and more important. . [0003] At present, the shallow trench isolation technology is used to replace the traditional intrinsic oxidation isolation technology, and the purpose of isolation is achieved by forming a shallow trench and then filling the trench with an insulating material. The insulating substance is mainly a combination of silicon dioxide and si...

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Problems solved by technology

However, the existing shallow trench isolation structure still has the problem of leakage current

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