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Polycrystalline silicon material and preparation method thereof

A polysilicon and formula technology, applied in polycrystalline material growth, chemical instruments and methods, crystal growth, etc., can solve problems such as low photoelectric conversion efficiency

Pending Publication Date: 2021-02-26
山东金韵能源技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The present invention aims at the technical defects of the prior art, and provides a polysilicon material and a preparation method thereof, so as to solve the technical problem of low photoelectric conversion efficiency of conventional polysilicon materials

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] The polysilicon material consists of the following components by weight: 97 parts of polysilicon, CoCl 2 0.02 parts, Ag 2 CrO 4 0.04 parts, BaCl 2 o 8 0.03 parts, TiC 0.01 parts, Pb(NO 3 ) 2 0.02 parts, germanium tetrachloride 0.02 parts, GaAs 0.08 parts, Sb 2 o 3 0.01 part, magnesium trisilicate 0.05 part, Bi(NO 3 ) 3 0.08 parts.

Embodiment 2

[0022] The polysilicon material consists of the following components by weight: 97.5 parts of polysilicon, CoCl 2 0.04 parts, Ag 2 CrO 4 0.08 parts, BaCl 2 o 8 0.05 parts, TiC 0.05 parts, Pb(NO 3 ) 2 0.04 parts, germanium tetrachloride 0.04 parts, GaAs 0.1 parts, Sb 2 o 3 0.05 parts, magnesium trisilicate 0.07 parts, Bi(NO 3 ) 3 0.1 part.

Embodiment 3

[0024] The polysilicon material consists of the following components by weight: 97.2 parts of polysilicon, CoCl 2 0.03 parts, Ag 2 CrO 4 0.06 parts, BaCl 2 o 8 0.04 parts, TiC 0.03 parts, Pb(NO3 ) 2 0.03 parts, germanium tetrachloride 0.03 parts, GaAs 0.09 parts, Sb 2 o 3 0.03 parts, magnesium trisilicate 0.06 parts, Bi(NO 3 ) 3 0.09 parts.

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PUM

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Abstract

The invention provides a polycrystalline silicon material and a preparation method thereof. According to the technical scheme, the components of polycrystalline silicon are compounded based on the metal ion doping principle, a trace amount of CoCl2, Ag2CrO4, BaCl2O8 and other components are introduced, TiC and GaAs are adopted for protecting the crystal structure, and meanwhile the formula proportion is optimized. On the basis, the invention provides a preparation method of the polycrystalline silicon material, the method is based on an improved Siemens method, and germanium tetrachloride, Bi(NO3)3 and BaCl2O8 are added in the process of preparing SiHCl3 to obtain doped trichlorosilane; then condensation and impurity removal are carried out, and CoCl2, Ag2CrO4 and magnesium trisilicate arefurther doped; in the reduction process, TiC, GaAs and trichlorosilane are vaporized together and then fed into a reduction furnace, metal ions are embedded into crystal lattices along with growth ofcrystals, and then the polycrystalline silicon material is obtained. The photoelectric conversion efficiency of the polycrystalline silicon material can reach about 28% and the service life is obviously prolonged, so that the polycrystalline silicon material has outstanding technical advantages.

Description

technical field [0001] The invention relates to the technical field of photovoltaic materials, in particular to a polysilicon material and a preparation method thereof. Background technique [0002] Polysilicon is a form of elemental silicon. When molten elemental silicon is solidified under supercooled conditions, silicon atoms are arranged in the form of diamond lattices to form many crystal nuclei. If these crystal nuclei grow into crystal grains with different crystal plane orientations, these crystal grains combine to crystallize into polycrystalline silicon. . [0003] Polysilicon is the most important and basic functional material in the semiconductor industry, electronic information industry, and solar photovoltaic cell industry. It is mainly used as a raw material for semiconductors and is the main raw material for preparing single crystal silicon. It can be used as various transistors, rectifier diodes, thyristors, solar cells, integrated circuits, computer chips...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B28/00C30B29/06C30B31/00
CPCC30B28/00C30B29/06C30B31/00
Inventor 傅光水张磊磊魏衍先
Owner 山东金韵能源技术有限公司
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