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A kind of preparation method of nano manganese carbide material

A manganese carbide and nanotechnology, which is applied in metal material coating process, gaseous chemical plating, coating, etc., can solve the problems that do not involve nano manganese carbide materials, and achieve excellent compatibility, good shape retention, and resistivity low effect

Active Publication Date: 2021-10-22
JIANGNAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, so far there is still no report involving the preparation of nano-manganese carbide materials by ALD

Method used

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  • A kind of preparation method of nano manganese carbide material
  • A kind of preparation method of nano manganese carbide material
  • A kind of preparation method of nano manganese carbide material

Examples

Experimental program
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Effect test

Embodiment 1

[0037] With [di(N,N'-di-sec-butylethylamidine) manganese (II)] (formula 1, R, R 1 All are sec-butyl) as manganese source, the method for the ALD in situ growth nano manganese carbide material of carbon source with formaldehyde, comprises following process:

[0038] (1) with SiO 2 As the substrate, bis(N,N'-di-sec-butylethylamidine) manganese (II) was heated to 85°C to vaporize it, and high-purity nitrogen was used as the carrier gas, and the gas phase bis(N,N '-di-sec-butylethylamidine) manganese (II), the carrier gas flow rate is 10 sccm, under vacuum conditions, the pulse time is 9s, and the deposition temperature is 300 ° C;

[0039](2) After completing a pulse, use high-purity nitrogen for purging treatment, and the purging time is 60s; then high-purity nitrogen is used as the carrier gas, and the carrier gas flow rate is 20 sccm, and formaldehyde is introduced in the form of pulses, and the pulse time is 1s;

[0040] (3) After completing a pulse, use high-purity nitroge...

Embodiment 2

[0043] With [di(N,N'-di-sec-butylethylamidine) manganese (II)] (formula 1, R, R 1 All are isopropyl) as manganese source, the method for the ALD in situ growth nano manganese carbide material of carbon source with acetaldehyde, comprises following process:

[0044] (1) Using silicon as the substrate, heat the manganese source to 80°C to vaporize it, use high-purity nitrogen as the carrier gas, and feed the gas-phase manganese source, the flow rate of the carrier gas is 20 sccm, and the pulse time is 10s under vacuum conditions. The deposition temperature is 280°C;

[0045] (2) After completing a pulse, use high-purity nitrogen for purging treatment, the purging time is 50s; heat the carbon source acetaldehyde to gasify it, use high-purity nitrogen as the carrier gas, and the flow rate of the carrier gas is 200 sccm, in the form of pulses Pass through acetaldehyde, the pulse time is 3s;

[0046] (3) After completing a pulse, use high-purity nitrogen to purge, and the purge ti...

Embodiment 3

[0049] With [di(N-isopropyl-N'-sec-butylethylamidine) manganese (II)] (formula 1, R, R 1 Respectively isopropyl and sec-butyl) as manganese source, with propionaldehyde as carbon source, including the following process:

[0050] (1) Using silicon nitride as the substrate, heat the manganese source to 90°C to vaporize it, and use high-purity nitrogen as the carrier gas to feed the gas-phase manganese source. The flow rate of the carrier gas is 30 sccm. Under vacuum conditions, the pulse time is 7s, and the deposition temperature is 260°C;

[0051] (2) After completing a pulse, use high-purity nitrogen to purge, and the purge time is 32s; heat the carbon source propionaldehyde to 33°C to vaporize it, use high-purity nitrogen as the carrier gas, and the flow rate of the carrier gas is 120sccm, Pass propionaldehyde in the form of pulse, the pulse time is 4s;

[0052] (3) After completing a pulse, use high-purity nitrogen to purge, and the purge time is 26s.

[0053] The above s...

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Abstract

The invention discloses a preparation method of a nanometer manganese carbide material, which belongs to the field of nanomaterials. The method of the present invention comprises the following steps: placing the substrate in the reaction chamber of thermal atomic layer deposition equipment, feeding gas-phase manganese source into the reaction chamber in pulse form under vacuum condition for deposition; feeding carbon source into the reaction chamber in pulse form after purging The reaction chamber is used to perform a single-atom reaction with the manganese source deposited on the substrate to obtain a single-atom layer manganese carbide material. The manganese source is a manganese source with a structure of formula 1-2, and the carbon source is formaldehyde, acetaldehyde, and propionaldehyde. Or a kind of butyraldehyde; purge again to complete an ALD cycle, and repeat the above cycle process many times to obtain a certain thickness of nano-manganese carbide material. The present invention adopts the combination of manganese source and carbon source with the structure of formulas 1-2, and further applies it in atomic layer deposition technology, so that it can be deposited on a nanoscale substrate to form a Contains manganese carbide deposits.

Description

technical field [0001] The invention relates to a preparation method of a nanometer manganese carbide material, which belongs to the field of nanomaterials. Background technique [0002] Manganese carbide has high stability, structural flexibility, and eco-friendliness, and is widely sourced and low-cost; it has shown excellent performance in applications such as energy storage, sensors, and solar conversion. The existing methods for synthesizing manganese carbide include direct carbonization, magnetron sputtering, impregnation, etc.; however, these conventional methods cannot effectively control the particles and morphology of the synthesized nano manganese carbide material. Since the composition and morphology of nanomaterials are often limited by their preparation methods, the preparation methods will also affect whether the material can be used in certain specific application fields. With the development of science and technology, atomic layer deposition (Atomic Layer D...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/32C23C16/455C23C16/52
CPCC23C16/32C23C16/45553C23C16/52
Inventor 杜立永何冬梅丁玉强
Owner JIANGNAN UNIV
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