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Flexible piezoresistive stress sensor and preparation method thereof

A stress sensor and piezoresistive technology, which is applied in the field of flexible electronic materials and sensing, can solve the problem of the decrease of permeability and flexibility of flexible piezoresistive stress sensors, the conductive network of Ag nanowires is easy to fall off and destroy, and the decrease of conductivity, etc. problem, to achieve the effect of strengthening coordination, easy operation and low cost

Pending Publication Date: 2021-03-05
CHONGQING UNIV OF ARTS & SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the simple characteristics of a single material can no longer meet people's needs for multifunctional materials. Only by constantly looking for multiple materials to compound can the advantages and multifunctionality of materials be improved.
[0003] Due to the nature of the inorganic material, the connection between the Ag nanowires and the flexible substrate is not tight, resulting in the conductive network of the Ag nanowires being easily detached and damaged, and the performance of the film is reduced, which makes the permeability and flexibility of the flexible piezoresistive stress sensor At the same time, by being exposed to the air environment, silver nanowires are easily oxidized due to their low redox potential, resulting in a decrease in electrical conductivity and a reduced service life; There is a need for a new functional transparent conductive film electrode, so a flexible piezoresistive stress sensor with high permeability, flexibility and good conductivity is now required

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] A method for preparing a PDMS microstructure substrate, comprising the following steps:

[0042] Under the condition of a humidity of 50%, dissolve polyacrylonitrile (PAN) in N-N dimethylformamide (DMF) solvent and configure a solution with a concentration of 15wt%; stir the above solution at a constant temperature of 60°C for 6h to obtain a spinning Solution, sealed and stored for later use; the prepared spinning solution was transferred into a syringe with a diameter of 13mm, and then the syringe was installed on the propeller, according to the propulsion rate of 0.015mL / min, the voltage was 3.6kV, and the distance between the needle and the substrate was 0.5mm , the running speed of the receiver during spinning is 200 mm / s, the gap residence time is 10 s, and an ordered organic grid with a grid interval of 150 μm is prepared. The substrate used was a stainless steel sheet (thickness 0.5cm). After spinning, the substrate with the spinning grid was heated and cured at ...

Embodiment 2

[0044] A method for preparing a flexible piezoresistive stress sensor, comprising the following steps:

[0045] Under the condition that the humidity is 50%, polyacrylonitrile (PAN) is dissolved in N-N dimethylformamide (DMF) solvent to configure a solution with a concentration of 15wt%; the above solution is stirred at a constant temperature of 60° C. for 6 hours to obtain spinning Silk solution, sealed and stored for later use; the prepared spinning solution was transferred into a syringe with a diameter of 13mm, and then the syringe was installed on the propeller, according to the propulsion rate of 0.015mL / min, the voltage was 3.6kV, and the distance between the needle and the substrate was 0.5 mm, the running speed of the receiver during spinning is 200 mm / s, the gap residence time is 10 s, and the prepared grid interval is 100 μm ordered organic grid. The substrate used was a stainless steel sheet (thickness 0.5cm). After spinning, the substrate with the spinning grid wa...

Embodiment 3

[0047] A method for preparing a flexible piezoresistive stress sensor, comprising the following steps:

[0048] Under the condition that the humidity is 50%, polyacrylonitrile (PAN) is dissolved in N-N dimethylformamide (DMF) solvent to configure a solution with a concentration of 15wt%; the above solution is stirred at a constant temperature of 60° C. for 6 hours to obtain spinning Silk solution, sealed and stored for later use; the prepared spinning solution was transferred into a syringe with a diameter of 13mm, and then the syringe was installed on the propeller, according to the propulsion rate of 0.015mL / min, the voltage was 3.6kV, and the distance between the needle and the substrate was 0.5 mm, the running speed of the receiver during spinning is 200 mm / s, the gap residence time is 10 s, and the prepared grid interval is 200 μm ordered organic grid. The substrate used was a stainless steel sheet (thickness 0.5cm). After spinning, the substrate with the spinning grid wa...

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PUM

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Abstract

The invention discloses a flexible piezoresistive stress sensor composed of a first PDMS microstructure substrate, an Ag nanowire / PEDOT:PSS conductive layer, a second PDMS microstructure substrate anda wire; the Ag nanowire / PEDOT:PSS conductive layer is clamped by the first PDMS microstructure substrate and the second PDMS microstructure substrate. The flexible piezoresistive stress sensor prepared by the invention is simple in method and easy to operate, and can be produced in batches; the flexible piezoresistive stress sensor precursor film has good bending resistance, the resistance is only reduced by 5% after the flexible piezoresistive stress sensor precursor film is bent 1000 times, and the flexible piezoresistive stress sensor precursor film has mechanical properties such as stretchability and compressibility and is suitable for preparing electronic components such as flexible sensors.

Description

technical field [0001] The invention belongs to the technical field of flexible electronic materials and sensing, and in particular relates to a flexible piezoresistive stress sensor and a preparation method thereof. Background technique [0002] With the rapid development of a new generation of flexible electronic materials and sensing technology, flexible stress sensors overcome the shortcomings of brittleness, and have good biocompatibility, stretchability, transparency, wearability and continuous detection, etc. Advantage. Commonly used conductive materials for flexible stress sensors include nanoparticles, carbon nanotubes, metal nanowires, graphene, and organic conductive materials. At present, the simple characteristics of a single material can no longer meet people's needs for multifunctional materials. Only by constantly looking for multiple materials to combine can the advantages and multifunctionality of materials be improved. [0003] Due to the nature of the i...

Claims

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Application Information

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IPC IPC(8): G01L1/18B82Y15/00B82Y40/00
CPCB82Y15/00B82Y40/00G01L1/18
Inventor 闫兴武李颖李璐石一非柏栋予
Owner CHONGQING UNIV OF ARTS & SCI
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