Manufacturing method of GOI test sample wafer for improving breakdown characteristic of trench gate

Abstract

The invention provides a manufacturing method of a GOI test sample for improving breakdown characteristics of a trench gate. The method comprises the following steps: S1, depositing an initial oxide layer on a substrate silicon wafer to serve as a hard mask layer; S2, performing photoetching to define a pattern of a groove, and performing etching on the hard mask layer according to the pattern toform an opening with a first width, wherein the first width is the distance of the opening in a direction parallel to the silicon wafer; S3, performing etching on the silicon wafer through the openingto form a groove with a first depth and a second width, wherein the second width is larger than the first width; S4, carrying out surface treatment on the groove formed in the silicon wafer; S5, growing a gate oxide layer by adopting a furnace tube, and depositing a conductive medium on the gate oxide layer; and S6, etching the doped polycrystalline silicon to form a grid electrode, and metallizing the back surface of the silicon wafer to form a back surface electrode.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for manufacturing a GOI test sample that improves the breakdown characteristics of trench gates. Background technique [0002] IGBT power device is a new type of power semiconductor device with rapid development and wide application. It is based on ordinary double diffused metal oxide semiconductor (DMOS), by introducing P+ structure in the collector, in addition to DMOS high input impedance, fast switching speed, high operating frequency, easy voltage control, good thermal stability, drive In addition to the characteristics of simple circuit and easy integration, the on-resistance and on-state power consumption are greatly reduced through the conductance modulation effect of collector hole injection. At present, power IGBT has been widely used in frequency conversion home appliances, wind power generation, locomotive traction, smart grid and other f...

AI Technical Summary

Problems solved by technology

In the manufacturing process of trench IGBT, the top of the trench is usually sharp, which causes the electric field on the top of the trench to break down, thereby introducing defects and disturbing the actual test results.

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