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Semiconductor package for high-speed data transmission and manufacturing method thereof

A semiconductor and waveguide technology, applied in the field of semiconductor packaging and its manufacturing for high-speed data transmission, can solve the problems of complex semiconductor device manufacturing, poor structural configuration and component layering, and loss of semiconductor device yield

Pending Publication Date: 2021-03-05
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Manufacturing of semiconductor devices at miniaturized scales becomes more complicated
Increased complexity in manufacturing semiconductor devices can cause defects such as poor structural configuration and component delamination resulting in significant yield loss and increased manufacturing costs of semiconductor devices
Thus, there are many challenges in modifying the structure of semiconductor devices and improving manufacturing operations

Method used

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  • Semiconductor package for high-speed data transmission and manufacturing method thereof
  • Semiconductor package for high-speed data transmission and manufacturing method thereof
  • Semiconductor package for high-speed data transmission and manufacturing method thereof

Examples

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Embodiment Construction

[0014] The following disclosure provides many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are examples only and are not intended to be limiting. For example, in the following description, forming a first member over or on a second member may include embodiments in which the first member and the second member are formed in direct contact, and may also include embodiments in which the first member and the second member may be in direct contact. An embodiment in which an additional component is formed between the second component so that the first component and the second component may not be in direct contact. Additionally, the present disclosure may repeat reference element symbols and / or letters in various instances. This repetition is for simplicity and clarity and does not in itself indicate a ...

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PUM

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Abstract

A semiconductor structure and a method of forming the same are provided. A method of manufacturing the semiconductor structure includes: providing a substrate; depositing a first dielectric layer overthe substrate; attaching a waveguide to the first dielectric layer; depositing a second dielectric layer to laterally surround the waveguide; and forming a first conductive member and a second conductive member over the second dielectric layer and the waveguide, wherein the first conductive member and the second conductive member are in contact with the waveguide. The waveguide is configured to transmit an electromagnetic signal between the first conductive member and the second conductive member.

Description

technical field [0001] Embodiments of the present invention relate to a semiconductor package for high-speed data transmission and a manufacturing method thereof. Background technique [0002] Electronic equipment using semiconductor devices is essential to many modern applications. As electronic technology advances, semiconductor devices continue to shrink in size while having greater functionality and more integrated circuits. Due to the miniaturization scale of semiconductor devices, chip-on-wafer-on-substrate (CoWoS) is widely used to integrate several chips into a single semiconductor device through through-substrate vias (TSVs). During CoWoS operation, many chips are assembled on a single semiconductor device. Furthermore, many manufacturing operations are performed within a small semiconductor device. [0003] However, the manufacturing operations of semiconductor devices involve many steps and operations on small and thin semiconductor devices. The manufacture of...

Claims

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Application Information

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IPC IPC(8): H01L21/48H01L23/498H01L23/66
CPCH01L21/4846H01L23/49838H01L24/02H01L23/66H01L2224/02379H01L2224/0231H01L2224/02331H01L2224/02373H01L2224/02381H01L2223/6627H01P3/16H01P5/087H01L23/5383H01L23/49816H01L21/4857H01L23/5384H01L2924/3025H01L2224/131H01L2224/13147H01L2224/13111H01L2224/13116H01L2224/13155H01L2224/13144H01L2224/16237H01L2224/73204H01L2224/92125H01L2224/32225H01L2924/15311H01L2924/18161H01L25/50H01L25/0655H01L24/13H01L24/16H01L24/32H01L24/73H01L24/92H01L25/18H01L2924/014H01L2924/00014H01L2224/16225H01L2924/00H01L23/498H01L23/495H01L23/525H01L24/10H01L23/5386H01P3/121H01L23/49822H01L2223/6677
Inventor 陈焕能廖文翔
Owner TAIWAN SEMICON MFG CO LTD
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