Trench type MOS field effect transistor and method, and electronic device

Abstract

The invention discloses a trench type MOS field effect transistor and a preparation method thereof, and an electronic device. The field effect transistor comprises a first electrode metal layer, a semiconductor layer and a drift region located on the side, away from the first electrode metal layer, of the semiconductor layer; a trench gate structure which is located on the side, away from the semiconductor layer, of the drift region and extends into the drift region, wherein the trench gate structure comprises a gate located in a gate trench, a Schottky barrier layer is arranged on the bottomsurface of the gate trench, and a gate isolation medium is arranged between the Schottky barrier layer and the gate; and a second electrode metal layer which extends into the gate trench and is in contact with the Schottky barrier layer, wherein an electrical isolation medium is arranged between the second electrode metal layer and the gate. The trench type MOS field effect transistor can utilizethe SBD device to isolate the influence of a high electric field on the gate medium at the bottom of the trench, especially at the corner during reverse voltage withstanding.

Description

technical field [0001] The invention relates to the field of electronics, in particular to a trench type MOS field effect transistor, a method, and an electronic device. Background technique [0002] Due to the advantages of high thermal conductivity, high breakdown field strength, and high electron saturation velocity, SiC material is suitable for making semiconductor devices with high power, high voltage, high operating temperature, and high operating frequency power. MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) power devices based on SiC materials have the advantages of low power consumption, high withstand voltage, high frequency, good heat dissipation, and miniaturization. It is widely used in high voltage and high current places. The trench gate SiC MOSFET has a smaller specific on-resistance than the planar SiC MOSFET, so it has better application prospects. [0003] However, due to the design of the trench in the trench-gate SiC MOSFET device, there i...

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Problems solved by technology

[0003] However, due to the design of the trench in the trench-gate SiC MOSFET device, there is an electric field concentration effect at the bottom corner of the trench, which affects the withstand voltage performance of the device gate dielectric

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