Parameter extraction method of elliptical frustum-shaped TSV based on temperature effect

Abstract

The invention discloses a parameter extraction method of an elliptical frustum-shaped TSV (through silicon via) based on a temperature effect. The parameter extraction method comprises the following steps: establishing a physical model of the elliptical frustum-shaped TSV containing bonding bumps; extracting parasitic resistance of the elliptical frustum-shaped TSV containing the bonding bumps; extracting parasitic inductance of the elliptical frustum-shaped TSV containing the bonding bumps; extracting parasitic capacitance of the elliptical frustum-shaped TSV containing the bonding bumps; establishing an equivalent circuit corresponding to the elliptical frustum-shaped TSV parasitic parameters containing the bonding bumps; and performing S parameter simulation on the physical model and the equivalent circuit of the elliptical frustum-shaped TSV containing the bonding bumps. According to the parameter extraction method, the structure of the bonding bump is completely considered, especially the coupling influence of the bonding bump on the resistance and capacitance of the TSV is considered, and all parasitic parameters of the TSV can be extracted more accurately.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a method for extracting parameters of an elliptical frustum-shaped TSV based on temperature effects. Background technique [0002] Alternative and complementary technologies have become a major focus as traditional integrated circuits are approaching their physical limits as the technology scales. Among various emerging technologies, three-dimensional (3D) integration technology has many advantages, which can improve the performance and functions of integrated circuits while reducing costs. Silicon, III-V compounds, carbon nanotubes, etc.) and processes (such as memory, logic circuits, radio frequency circuits, micro-mechanical systems, etc.) are integrated into a chip. TSV (Through Silicon Via, through-silicon via), as the conductive channel connecting the upper and lower chips, has been proved to be a key component that affects the overall performance of 3...

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Problems solved by technology

With the demand for low-cost, high-yield process technology, the successful application of TSV technology requires further optimization of TSV design and physical models. At the same time, TSV technology will increase power consumption density and increase chip temperature, which will affect subsequent development. Research on Electromagnetic Characteristics of TSV

[0004] For the structural model and parameter extraction of TSV, domestic and foreign scholars have carried out extensive research and discussion. The structural model has conical, cylindrical, conical ring and coaxial shapes, etc., and corresponds to various methods of parameter extraction such as microwave transmission line. However, most of the TSV physical models currently studied have a single structure, and the temperature effect is not considered in the parameter analysis formula, and the analysis results cannot fully reflect the TSV transmission characteristics.

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