Unlock instant, AI-driven research and patent intelligence for your innovation.

Preparation method and application of antimony-sulfur-selenium film with V-shaped energy band structure

A technology of energy band structure and thin film, applied in the direction of final product manufacturing, sustainable manufacturing/processing, climate sustainability, etc., can solve the problems of open circuit voltage and short circuit current limitation of antimony sulfur selenium solar cells, and achieve small surface roughness , The surface of the film is smooth and the effect of improving efficiency

Active Publication Date: 2021-03-09
HUAZHONG UNIV OF SCI & TECH
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Aiming at the defects and improvement needs of the prior art, the present invention provides a preparation method and application of an antimony-sulfur-selenide thin film with a V-shaped energy band structure, and its purpose is to solve the problem of open-circuit voltage and short-circuit current of the existing antimony-sulfur-selenide solar cells. Mutually restrictive technical issues

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method and application of antimony-sulfur-selenium film with V-shaped energy band structure
  • Preparation method and application of antimony-sulfur-selenium film with V-shaped energy band structure
  • Preparation method and application of antimony-sulfur-selenium film with V-shaped energy band structure

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0036] refer to figure 1 , combined with Figure 2-4 , a kind of preparation method of antimony sulfur selenium film with V-type energy band structure provided by the invention, comprises the following steps:

[0037] S1: Mix potassium antimony tartrate, sodium thiosulfate, and selenourea to obtain a first precursor solution; after the first precursor solution undergoes a water bath reaction, it is placed on a substrate for deposition, thereby forming a first precursor solution on the substrate. A layer of precursor thin film;

[0038] S2: Mix potassium antimony tartrate, sodium thiosulfate, and selenourea to obtain a second precursor solution; after the second precursor solution is subjected to a water bath reaction, put it into the substrate deposited in step S1 to continue deposition, thereby Forming a second layer of precursor film on the first layer of precursor film;

[0039] S3: Mix potassium antimony tartrate, sodium thiosulfate, and selenourea to obtain a third pre...

Embodiment 1

[0054] In the first step, mix 0.03g ethylenediaminetetraacetic acid, 0.534g antimony potassium tartrate and 1.6g sodium thiosulfate in a 50mL glass bottle filled with 40mL deionized water, and add 1mg of selenourea after the solution turns yellow , to obtain the first precursor solution, cover the mouth of the bottle with a plastic cap without tightening it, then place the glass bottle in a water bath at 60°C for 20 minutes, and then put the CdS deposited FTO glass substrate into the first precursor solution After reacting at 60°C for 1 hour, take it out immediately to obtain the first layer of antimony sulfur selenium precursor thin film, which is numbered 1 hour.

[0055] In the second step, mix 0.03g ethylenediaminetetraacetic acid, 0.534g antimony potassium tartrate and 1.6g sodium thiosulfate in a 50mL glass bottle filled with 40mL deionized water, and add 40mg of selenourea after the solution turns yellow , to obtain the second precursor solution, cover the mouth of the ...

Embodiment 2

[0060] In the first step, mix 0.03g ethylenediaminetetraacetic acid, 0.534g antimony potassium tartrate and 1.6g sodium thiosulfate in a 50mL glass bottle filled with 40mL deionized water, and add 10mg of selenourea after the solution turns yellow , to obtain the first precursor solution, cover the mouth of the bottle with a plastic cap without tightening it, then place the glass bottle in a water bath at 100°C for 20 minutes, and then put the CdS-deposited FTO glass substrate into the first precursor solution After reacting at 100°C for 1 hour, it was taken out immediately to obtain the first layer of antimony sulfur selenium precursor thin film, numbered 1 hour.

[0061] In the second step, mix 0.03g ethylenediaminetetraacetic acid, 0.534g antimony potassium tartrate and 1.6g sodium thiosulfate in a 50mL glass bottle filled with 40mL deionized water, and add 60mg of selenourea after the solution turns yellow , to obtain the second precursor solution, cover the bottle mouth w...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a preparation method and application of an antimony-sulfur-selenium film with a V-shaped energy band structure, and belongs to the technical field of photoelectric materials and films. The method comprises the steps of mixing antimony potassium tartrate, sodium thiosulfate and selenourea to obtain a precursor solution; depositing in three steps, adjusting the addition amount of selenourea in each step to meet the condition that the content of selenourea in the step 2 is greater than that in the step 1 and the step 3, reacting in a water bath, and drying to obtain an antimony-sulfur-selenium precursor film; and annealing the antimony-sulfur-selenium precursor film, and finally obtaining the antimony-sulfur-selenium film with the V-shaped energy band structure becausethe atomic ratio of S to Se in the second layer of precursor film obtained by deposition is less than those of the first layer and the third layer, that is, the band gap of the second layer of precursor film is less than those of the first layer and the third layer. Therefore, the solar cell manufactured by the antimony-sulfur-selenium film with the V-shaped energy band structure can realize cooperative improvement of open-circuit voltage and short-circuit current, thereby obtaining higher photoelectric conversion efficiency.

Description

technical field [0001] The invention belongs to the technical field of photoelectric materials and thin films, and more specifically relates to a preparation method and application of an antimony-sulfur-selenium thin film with a V-shaped energy band structure. Background technique [0002] Thin film photovoltaics are widely used in flexible devices and building integrated photovoltaics, among which CdTe and CuInGaSe 2 is a typical representative. However, the toxicity of Cd and the scarcity of Te, In, and Ga limit their applications. Therefore, it is imminent to explore the abundant and non-toxic photovoltaic materials on the earth. Antimony-based chalcogenides include antimony sulfide (Sb 2 S 3 ), antimony selenide (Sb 2 Se 3 ) and their alloys antimony sulfur selenium (Sb 2 (S, Se) 3 ) have been extensively studied in recent years. Sb based topliner structure 2 Se 3 The solar cell has obtained an efficiency of more than 7.6%; at the same time, by constructing th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0296H01L31/042H01L31/18H01L31/0216
CPCH01L31/02966H01L31/1828H01L31/042H01L31/02167Y02E10/543
Inventor 唐江卢岳陈超鲁帅成李康华李森
Owner HUAZHONG UNIV OF SCI & TECH