Up-conversion low-turn-on voltage infrared detection-light emitting device and preparation method thereof

A technology of turn-on voltage and infrared detection, which is applied in the direction of electric solid-state devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of turn-on voltage and low light-to-light conversion efficiency, and achieve lower turn-on voltage and weak light detection capabilities Improved effect

Active Publication Date: 2021-03-12
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The purpose of the present invention is to overcome the problems of low light-to-light conversion efficiency and high turn-on voltage of existing single-layer infrared up-conversion devices, and provide an up-conversion low-turn-on voltage infrared detection-light-emitting device and its preparation method

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  • Up-conversion low-turn-on voltage infrared detection-light emitting device and preparation method thereof
  • Up-conversion low-turn-on voltage infrared detection-light emitting device and preparation method thereof
  • Up-conversion low-turn-on voltage infrared detection-light emitting device and preparation method thereof

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Embodiment 1

[0040] Such as figure 1 As shown, in Example 1, an up-conversion low turn-on voltage infrared detection-light-emitting device, the device device includes a transparent substrate 1, a transparent conductive film 2, a first electron transport layer 3, and a ternary active layer from bottom to top. 4. Hole transport layer 5, light-emitting layer 6, second electron transport layer 7, top electrode 8; ternary active layer 4 is a binary electron donor-acceptor active layer doped with a third element acceptor material, and Annealing is used to form a thin film with a crystallographic orientation in the plane transport direction; the light-emitting host material of the second electron transport layer 7 and the light-emitting layer 6 forms an exciplex at the interface between the second electron transport layer 7 and the light-emitting layer 6 . Specifically, the transparent conductive film 2 is specifically ITO conductive glass; the first electron transport layer 3 is specifically zin...

Embodiment 2

[0049] This embodiment has the same inventive concept as Embodiment 1. On the basis of Embodiment 1, a method for preparing an up-conversion low-turn-on-voltage infrared detection-light-emitting device is provided. The method includes the following steps:

[0050] S01: Perform patterned etching on the transparent conductive film 2 with the transparent substrate 1 after cleaning, leave an electrical test channel, and enter step S02; wherein, use transparent cleaning agent, acetone, ethanol, and deionized water to clean in sequence Transparent substrate 1, transparent conductive film 2, transparent conductive film 2 is ITO conductive glass.

[0051] S02: The first electron transport layer 3 is prepared by spin coating by solution method, and then the third element acceptor material is mixed into the binary electron donor-acceptor active layer and dissolved in chlorobenzene and chloronaphthalene for spin coating, spin coating After the annealing treatment is completed, the prepar...

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Abstract

The invention discloses an up-conversion low-turn-on-voltage infrared detection-light emitting device and a preparation method thereof, and belongs to the technical field of infrared up-conversion detection, and the device sequentially comprises a transparent substrate, a transparent conductive film, a first electron transmission layer, a ternary active layer, a hole transmission layer, a light-emitting layer, a second electron transmission layer and a top electrode from the bottom to the top. The ternary active layer is formed by doping a third-element acceptor material into a binary electrondonor acceptor active layer and forming a thin film with crystal orientation in a surface transmission direction through annealing; the second electron transport layer and the light-emitting host material of the light-emitting layer form an exciplex at the interface of the second electron transport layer and the light-emitting layer. The light emitting layer and the second electron transmission layer adopt interface organic exciplex light emitting and ternary active layer to form a surface transmission direction crystal orientation film, so that the turn-on voltage is greatly reduced, the overall energy consumption of the device is reduced, the infrared up-conversion detection sensitivity of the device is improved, and the device can be applied to the fields of near-infrared detection imaging, infrared light source calibration, infrared identification and the like.

Description

technical field [0001] The invention relates to the technical field of infrared up-conversion detection, in particular to an up-conversion low turn-on voltage infrared detection-light-emitting device and a preparation method thereof. Background technique [0002] Infrared up-conversion detectors can convert invisible infrared light into light visible to human eyes. This conversion luminescence detection has great application prospects in infrared imaging, environmental monitoring, and military fields. Traditional infrared detection devices require arrays and back-end image processing circuits to form images, and their resolution is also related to the number of arrays, which greatly limits their functions and manufacturing difficulties. The infrared up-conversion detector can realize such functions only in a large-area device, and its resolution can theoretically be close to the smallest film-forming size. [0003] The infrared up-conversion device is composed of a detectio...

Claims

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Application Information

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IPC IPC(8): H01L27/30H01L27/32H01L51/50H01L51/54H01L51/56
CPCH10K39/30H10K59/60H10K85/10H10K85/60H10K50/11H10K2101/40H10K50/12H10K71/00
Inventor 王军韩嘉悦杜晓扬何泽宇陶斯禄蒋亚东
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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