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Novel BHT and HT matched high-performance OLED device

An electroluminescent device and energy level technology, which is applied in the fields of electro-solid devices, semiconductor devices, semiconductor/solid-state device manufacturing, etc. Poor and other problems

Inactive Publication Date: 2021-03-12
JIANGSU SUNERA TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

After the hole transport host material in the anode interface buffer layer and the P-type dopant material form a charge transfer state, a large HOMO energy level barrier difference will be formed between the hole transport material and the anode interface buffer layer and the holes will easily The accumulation of charges at the interface of the transport layer affects the stability of the OLED device; on the other hand, a single hole transport layer puts forward higher requirements for the energy level matching of the material and the hole mobility, which is often difficult to meet the requirements of the device structure. need

Method used

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  • Novel BHT and HT matched high-performance OLED device
  • Novel BHT and HT matched high-performance OLED device
  • Novel BHT and HT matched high-performance OLED device

Examples

Experimental program
Comparison scheme
Effect test

preparation Embodiment 1

[0094] Anode interface buffer layer 1: Use the OLED Chuster Deposition System (manufacturer: CHOSHU INDUSTRY Co.LTD.) evaporation equipment model 1504-10117-01-0 to place the hole transport host material BHT106 and the P-type dopant material P1 on the In two different evaporation sources, at a vacuum of 1.0E -5 Under Pa pressure, control the evaporation rate of BHT106 as Control the evaporation rate of P1 as Co-evaporated to obtain the anode interface buffer layer HI1 of the present invention.

[0095] Anode interface buffer layer 2: Repeat the preparation process of HI preparation example 1, except that the P-type dopant material P1 is replaced by P2 to obtain the anode interface buffer layer HI2.

[0096] Anode interface buffer layer 3: Repeat the preparation process of HI preparation example 1, the difference is that the main hole transport material BHT106 is replaced by BHT112 to obtain an anode interface buffer layer HI3.

[0097] Anode interface buffer layer 4: Repe...

Embodiment 1

[0103] Vacuum evaporation is carried out under the following conditions: use the OLED ChusterDeposition System (manufacturer: CHOSHU INDUSTRYCo.LTD.) evaporation equipment of model 1504-10117-01-0, at a vacuum degree of 1.0E -5 Under the pressure of Pa, the evaporation rate is controlled as

Embodiment 1

[0104] Device Preparation Example 1: Carry out according to the following process:

[0105] a) Use transparent glass as the substrate, and coat it with ITO with a thickness of 150nm as the anode layer, then use deionized water, acetone, and ethanol to ultrasonically clean each for 15 minutes, and then treat it in a plasma cleaner for 2 minutes;

[0106] b) On the washed first electrode layer, vapor-deposit the anode interface buffer layer 1 obtained in Example 1 by a vacuum evaporation method, with a thickness of 5 nm;

[0107] c) On the anode interface buffer layer, a hole transport layer is evaporated by vacuum evaporation, the material of the first hole transport layer is BH106, the material of the second hole transport layer is HT305, and the total thickness is 100nm;

[0108] d) Evaporating an electron blocking layer EB1 on the hole transport layer by vacuum evaporation with a thickness of 10 nm;

[0109] e) On the electron blocking layer, evaporate the light-emitting la...

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Abstract

The invention relates to the technical field of electroluminescent devices, and discloses a novel BHT and HT matched high-performance OLED device, which is sequentially provided with a substrate, a first electrode, an organic functional layer and a second electrode from bottom to top, and is characterized in that the organic functional material layer comprises: a hole transport region located on the first electrode; a light-emitting layer on the hole transport region; and an electron transport region which is located on the light-emitting layer, wherein the hole transport region sequentially comprises an anode interface buffer layer, a hole transport layer and an electron blocking layer from bottom to top. Through matching optimization between the layer structures, the stability of carrierinjection is improved, the light-emitting layer can emit light more continuously and stably, and the service life of the device is prolonged.

Description

technical field [0001] The invention relates to the technical field of electroluminescent devices, in particular to an organic electroluminescent device with a novel anode interface buffer layer and a hole transport layer. Background technique [0002] In recent years, organic light emitting diodes (OLEDs) have been researched and developed and widely used in display devices. The organic electroluminescent device is a current device. When a voltage is applied to the electrodes at its two ends, and the electric field acts on the positive and negative charges in the film layer of the organic layer functional material, the positive and negative charges are further recombined in the organic light-emitting layer, that is, an organic electroluminescent device is generated. Electromechanical Luminescence. [0003] Organic electroluminescent devices generally have a multilayer structure, and various auxiliary functional layers besides the light-emitting layer also play a vital role...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/54H01L27/32
CPCH10K59/00H10K85/111H10K30/865H10K50/11H10K2101/40H10K50/15H10K50/18
Inventor 李崇赵鑫栋王芳张兆超
Owner JIANGSU SUNERA TECH CO LTD
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