Deep ultraviolet detector based on core-shell nanorod array and preparation method thereof

Abstract

The invention provides a deep ultraviolet detector based on a core-shell nanorod array and a preparation method of the deep ultraviolet detector. The deep ultraviolet detector based on the core-shellnanopillar array comprises a substrate and a gallium nitride layer located on the substrate, wherein the upper half portion of the gallium nitride layer forms the gallium nitride nanopillar array, andthe gallium nitride nanopillar array and gallium oxide wrapping the upper surface of the gallium nitride nanopillar array form a core-shell nanopillar array heterojunction; and the metal electrodes are respectively arranged on the electrode regions on the surfaces of the gallium nitride layer and the gallium oxide layer, and Schottky contact is formed. Through the formation of the core-shell heterojunction, the dark current of the deep ultraviolet detector can be effectively reduced, responsivity of the device is improved, and the performance of the photoelectric detector based on the semiconductor heterojunction is improved. The deep ultraviolet detector based on the core-shell nanorod array is simple in structure, easy to prepare and convenient for large-scale production.

Description

technical field [0001] The invention belongs to the technical field of semiconductor optoelectronic devices, and in particular relates to a deep ultraviolet detector based on a core-shell nanocolumn array and a preparation method thereof. Background technique [0002] Deep ultraviolet photodetectors with operating wavelengths in the "solar blind zone" (200-280nm) have strong signal recognition capabilities and strong anti-interference characteristics in complex environments. They are used in missile guidance, ozone hole monitoring, biomedical analysis, and fire components. It has broad application prospects in detection and other fields. However, the currently developed deep ultraviolet photodetectors are still not accurate and sensitive enough for the identification of weak light signals, which puts forward higher requirements for the structure and performance of deep ultraviolet photodetectors. [0003] Deep ultraviolet detectors based on AlGaN / GaN, MgZnO / ZnO semiconducto...

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