Vertical cavity surface emitting laser and method of manufacturing the same

Abstract

The invention discloses a vertical-cavity surface-emitting laser and a manufacturing method thereof, wherein the vertical-cavity surface-emitting laser sequentially includes a substrate, a buffer layer, an N-electrode contact layer, and a first distributed Bragg reflector according to a preset direction , the first cladding layer, the first heterojunction confinement layer, the active region, the second heterojunction confinement layer, the second cladding layer, the oxidation confinement layer, the second distributed Bragg reflector, the P electrode and the N electrode, wherein, The active region includes a plurality of non-uniform compressive strain quantum wells with different widths; the doping concentration of the N electrode contact layer is higher than that of the substrate and the first distributed Bragg mirror; the N electrode is arranged on the N electrode contact layer, An epitaxial structure of the N-electrode contact layer is formed. Through the design of the vertical cavity surface emitting laser, the wide temperature range operation of the device can be realized, and the preparation process is simple, the repeatability is good, and the cost is low.

Description

technical field [0001] The invention belongs to the technical field of semiconductor lasers, in particular to a high-speed vertical-cavity surface-emitting laser working in a wide temperature range and a preparation method thereof. Background technique [0002] Vertical cavity surface emitting laser (VCSEL), due to its unique advantages of high modulation speed, circular spot that is easy to couple with optical fiber, single longitudinal mode, low threshold operating current, low power consumption, and easy large-scale integration of two-dimensional arrays, etc., It has a wide range of applications in short-distance and ultra-short-distance optical interconnection data transmission, optical communications, supercomputers, 5G fronthaul, etc. A typical vertical cavity surface emitting laser (VCSEL) structure usually includes a P electrode, an upper distributed Bragg reflector (upper DBR), an oxidation confinement layer, a quantum well active region, a lower DBR, and an N elect...

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Problems solved by technology

[0004] However, at a lower operating temperature (~-45°C) for this structure, the gain peak temperature drift speed of the quantum well material is much faster than the temperature change speed of the cavity mode, resulting in an increase in the gap between the gain peak value and the FP cavity mode, and the cavity The gain of the mode position is small, so that the static and dynamic working characteristics of the laser are reduced, and it is difficult to meet the wide temperature range working requirements of the device

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