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A kind of preparation method of superjunction power device

A technology of power devices and super junctions, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of limited dopant concentration, limited etching depth and oxide film thickness, and electronic unevenness to achieve durability The effect of high voltage value, protection against damage, and low on-resistance

Active Publication Date: 2022-06-21
北京利宝生科技有限公司
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Problems solved by technology

However, the first type of manufacturing method has electron unevenness and diffusion, which limits the concentration of dopants; while in the second type of manufacturing method, the etching depth and oxide film thickness are also limited by the airflow intensity in the vertical direction; therefore, the existing The electrical performance of super junction power devices needs to be improved

Method used

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  • A kind of preparation method of superjunction power device
  • A kind of preparation method of superjunction power device
  • A kind of preparation method of superjunction power device

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Embodiment Construction

[0050] In order to further explain the technical solutions of the present invention, the present invention will be described in detail below through specific embodiments.

[0051] like Figure 1 to Figure 10 As shown, the present invention discloses a preparation method of a super junction power device, which comprises the following steps:

[0052] Step 1: provide a semiconductor substrate 1 with a high doping concentration and an N-type conductivity type, and form a first epitaxial layer 2 with an N-type conductivity type on the front surface of the N-type semiconductor substrate 1;

[0053] Step 2: Etch the front surface of the first epitaxial layer 2 to form a plurality of gate trenches 21, and grow a protective layer 3 on the first epitaxial layer 2, and the protective layer 3 covers the top surface of the first epitaxial layer 2 and each gate The pole trench 21; the protective layer 3 may include a basic protective layer 31 and a passivation layer 32 grown in sequence, a...

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Abstract

The invention discloses a preparation method of a super junction power device, which diffuses the dopant of the second epitaxial layer into the first epitaxial layer through a thermal diffusion process, thereby obtaining a super junction; the invention can effectively improve the super junction power device The withstand voltage value and reduce the on-resistance.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a preparation method of a super junction power device. Background technique [0002] Superjunction power device is a new type of power semiconductor device with rapid development and wide application. It is a super junction (SuperJunction) structure introduced on the basis of ordinary double spread metal oxide semiconductor (DMOS); in addition to DMOS high input impedance, fast switching speed, high operating frequency, easy voltage control, good thermal stability, drive circuit In addition to being simple and easy to integrate, it also overcomes the disadvantage that the on-resistance of DMOS increases with the breakdown voltage in a 2.5-power relationship. At present, superjunction DMOS has been widely used in power supplies or adapters for personal computers, notebook computers, netbooks, mobile phones, lighting (high pressure gas discharge lamps) products, and consume...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336H01L29/06H01L29/78
CPCH01L29/0634H01L29/0649H01L29/66825H01L29/66484H01L29/7841H01L29/7831H01L29/66734H01L29/7813
Inventor 金宰年叶宏伦钟其龙刘芝韧刘崇志
Owner 北京利宝生科技有限公司