High-frequency soft magnetic material and preparation method thereof

A soft magnetic material, high frequency technology, applied in the direction of magnetic materials, metal material coating process, magnetic objects, etc., can solve the application requirements in the high frequency field, the weakening of soft magnetic properties and high frequency characteristics, low coercivity and other problems, to achieve the effect of excellent soft magnetic performance, saving production cost and time, and low damping

Pending Publication Date: 2021-04-13
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the ingredients and preparation methods of the above-mentioned patents cannot simultaneously combine simple and efficient preparation methods, low damping, high cut-off frequency, excellent soft magnetic properties (high magnetic permeability, high saturation magnetization, low coercive force) and high At present, the damping

Method used

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  • High-frequency soft magnetic material and preparation method thereof
  • High-frequency soft magnetic material and preparation method thereof
  • High-frequency soft magnetic material and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0047] A high-frequency soft magnetic material with a chemical formula of Fe 55 co 27 f 5 N 13 , which is prepared as figure 1 As shown, the specific steps are as follows:

[0048] (1) Prepare Fe with a purity of 99.95% 55 co 30 f 15 Alloy targets, Si(100) substrates are cut as needed, and the silicon wafer substrates are cleaned by RCA semiconductor silicon wafer cleaning process, and dried with nitrogen gas for later use;

[0049] (2) if figure 2 Shown is a schematic diagram of in-situ application of a magnetic field to a high-frequency soft magnetic material. First, a NdFeB permanent magnet of a specific size is processed by wire cutting and fixed on the sample holder. The distance between the two permanent magnets is 10mm, and the substrate is located in the space of the permanent magnet. At the very center, the direction of the induced field is parallel to the surface of the substrate, and the size of the induced field is 500Oe. Then place the substrate holder o...

Embodiment 2

[0057] A high-frequency soft magnetic material with a chemical formula of Fe 53 co 33 h 5 N 9 , which is prepared as figure 1 As shown, the specific steps are as follows:

[0058] (1) Prepare Fe with a purity of 99.95% 55 co 30 f 15 Alloy targets, Si(100) substrates are cut as needed, silicon wafers are cleaned by RCA semiconductor silicon wafer cleaning process, and dried with nitrogen gas for later use;

[0059] (2) if figure 2 Shown is a schematic diagram of in-situ application of a magnetic field to a high-frequency soft magnetic material. First, a NdFeB permanent magnet of a specific size is processed by wire cutting and fixed on the sample holder. The distance between the two permanent magnets is 25mm, and the substrate is located in the space of the permanent magnet. At the very center, the direction of the induced field is parallel to the surface of the substrate, and the size of the induced field is 70Oe. Then place the sample holder on the sample stage, clo...

Embodiment 3

[0063] A high-frequency soft magnetic material with a chemical formula of Fe 47 co 33 f 9 N 11 , which is prepared as figure 1 As shown, the specific steps are as follows:

[0064] (1) Prepare Fe with a purity of 99.95% 55 co 30 f 15 Alloy targets, Si(100) substrates are cut as needed, silicon wafers are cleaned by RCA semiconductor silicon wafer cleaning process, and dried with nitrogen gas for later use;

[0065] (2) if figure 2 Shown is a schematic diagram of in-situ application of a magnetic field to a high-frequency soft magnetic material. First, a NdFeB permanent magnet of a specific size is processed by wire cutting and fixed on the sample holder. The distance between the two permanent magnets is 10mm, and the substrate is located in the space of the permanent magnet. At the very center, the direction of the induced field is parallel to the surface of the substrate, and the size of the induced field is 500Oe. Then place the sample holder on the sample stage, c...

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Abstract

The invention discloses a high-frequency soft magnetic material. The chemical formula of the high-frequency soft magnetic material is Fe1-x-yAxBy, x is larger than or equal to 15 and smaller than or equal to 45, y is larger than or equal to 10 and smaller than or equal to 20, A is Co and/or Ni, B is nitride, and the high-frequency soft magnetic material has a directional magnetic domain structure. The high-frequency soft magnetic material has a double-phase structure in which magnetic nanoparticles are embedded into a nitride amorphous insulating matrix, and the grain size is less than 10nm. The invention also provides a method for preparing the high-frequency soft magnetic material by combining reactive magnetron sputtering with an in-situ applied magnetic field. The high-frequency soft magnetic material provided by the invention has good high-frequency characteristics: the cut-off frequency is within the range of 1-10GHz, and the damping coefficient is less than or equal to 0.023; excellent soft magnetic performance is achieved: the magnetic conductivity is greater than or equal to 400 (100MHz), the saturation magnetization is greater than or equal to 16kGs, the resistivity is greater than or equal to 1000 muohmcm, the coercive force is less than or equal to 100Oe, the preparation method is simple, and the cost is lower.

Description

technical field [0001] The invention relates to the field of magnetic materials, in particular to a high-frequency soft magnetic material and a preparation method thereof. Background technique [0002] With the development of the electronic information industry, the high frequency, miniaturization and integration of electronic components have become an inevitable development direction. According to the international equipment route and Moore's Law, the number of electronic components integrated on integrated circuits doubles every two years, while the volume of electronic products is gradually declining, resulting in electromagnetic interference problems and the inability to integrate components The problem seriously restricts the miniaturization development of electronic components. On the other hand, with the continuous improvement of signal transmission rate, the frequency of use of electronic components is also further increasing. Taking mobile phones as an example, tr...

Claims

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Application Information

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IPC IPC(8): H01F1/153C23C14/35C23C14/06C23C14/00
CPCH01F1/15308H01F1/15341C23C14/351C23C14/0688C23C14/0036
Inventor 黎嘉威刘西洋贺爱娜董亚强
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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