Low-pressure annealing method for crystalline silicon solar cell

A solar cell, low-voltage technology, applied in circuits, electrical components, photovoltaic power generation, etc., can solve the problems of unstable gas flow in the tube, restricting the development of battery technology, unfavorable silicon oxide layer growth, etc. Effect of anti-PID performance, short-circuit current and open-circuit voltage improvement

Pending Publication Date: 2021-04-16
GUANGDONG AIKO SOLAR ENERGY TECH +2
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the traditional annealing process is carried out under normal pressure. Due to the unstable gas flow in the tube, it is not conducive

Method used

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  • Low-pressure annealing method for crystalline silicon solar cell
  • Low-pressure annealing method for crystalline silicon solar cell
  • Low-pressure annealing method for crystalline silicon solar cell

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0088]Example 1 Set of crystalline silicon solar cells with different pressure in the retaining furnace, including:

[0089](1) Turn nitrogen in the annealing furnace, regulate the internal pressure and internal temperature of the annealing furnace;

[0090](2) Put the quartz boat loaded with the silicon wafer into the annealing furnace;

[0091](3) Take the annealing furnace to take nitrogen and oxygen, regulate the pressure in the furnace;

[0092](4) The wafer is thermally oxidized to form a silicon oxide layer;

[0093](5) Annealing the silicon wafer;

[0094](6) Turn nitrogen into the furnace, so that the pressure in the furnace of the annealing furnace will rise;

[0095](7)

[0096]Among them, the furnace pressure of step (3) (4) (5) is maintained at 100-300 mbar.

[0097]The process parameters in the first group are specifically see Table 1:

[0098]Table 1 Example 1 Group Process Parameters

[0099]

Example Embodiment

[0101]Example 1-1: The pressure of the furnace is 100 mbar;

Example Embodiment

[0102]Example 1-2: Inner pressure in the furnace is 200 mbar;

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Abstract

The invention discloses a low-pressure annealing method of a crystalline silicon solar cell, wherein the method comprises the steps: (1) introducing nitrogen into an annealing furnace, and regulating the in-furnace pressure and the in-furnace temperature of the annealing furnace; (2) putting a quartz boat loaded with a silicon wafer into the annealing furnace; (3) vacuumizing the annealing furnace, introducing nitrogen and oxygen, and adjusting the in-furnace pressure; (4) carrying out thermal oxidation treatment on the silicon wafer to form a silicon oxide layer; (5) annealing the silicon wafer; (6) introducing nitrogen into the annealing furnace to enable the pressure in the annealing furnace to rise again; and (7) discharging the boat, wherein the in-furnace pressure in the step (3), the step (4) and the step (5) is kept at 100-300 mbar. According to the invention, thermal oxidation treatment and annealing treatment are carried out under a low-pressure condition, the operation is simple and controllable, and a uniform and compact silicon oxide layer can be grown by adopting the method, so that the conversion efficiency and reliability of the cell are improved.

Description

technical field [0001] The invention relates to the technical field of batteries, in particular to a low-pressure annealing method for a crystalline silicon solar battery. Background technique [0002] With the reduction of non-renewable energy sources and the increasingly prominent environmental problems, people's pursuit of clean energy is becoming increasingly intense. As a renewable clean energy, solar energy is more and more favored by people. A solar cell is a device that can effectively absorb solar radiation energy and convert light energy into electrical energy by using the photovoltaic effect, and the battery sheet is an important part of the device. Improving the efficiency and reliability of cells and reducing the cost of cells are crucial to the development of solar photovoltaic cells. [0003] At present, the conventional P-type PERC battery mainly includes processes: texturing, diffusion, SE laser, etching, annealing, PERC coating, PECVD coating, laser groov...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/068
CPCY02E10/547Y02P70/50
Inventor 吴疆杨苏平陈刚
Owner GUANGDONG AIKO SOLAR ENERGY TECH
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