Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Low-pressure annealing method for crystalline silicon solar cell

A solar cell, low-voltage technology, applied in circuits, electrical components, photovoltaic power generation, etc., can solve the problems of unstable gas flow in the tube, restricting the development of battery technology, unfavorable silicon oxide layer growth, etc. Effect of anti-PID performance, short-circuit current and open-circuit voltage improvement

Pending Publication Date: 2021-04-16
GUANGDONG AIKO SOLAR ENERGY TECH +2
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the traditional annealing process is carried out under normal pressure. Due to the unstable gas flow in the tube, it is not conducive to the growth of the silicon oxide layer, which restricts the development of battery technology and affects the conversion efficiency of the battery.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Low-pressure annealing method for crystalline silicon solar cell
  • Low-pressure annealing method for crystalline silicon solar cell
  • Low-pressure annealing method for crystalline silicon solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0088] Example 1 group is a low-pressure annealing method for crystalline silicon solar cells with different pressures in the furnace after evacuation treatment, including:

[0089] (1) feed nitrogen into the annealing furnace to adjust the pressure and temperature in the furnace of the annealing furnace;

[0090] (2) Put the quartz boat loaded with silicon wafers into the annealing furnace;

[0091] (3) Evacuate the annealing furnace, feed nitrogen and oxygen, and adjust the pressure in the furnace;

[0092] (4) Carry out thermal oxidation treatment to silicon chip, form silicon oxide layer;

[0093] (5) Carry out annealing treatment to silicon chip;

[0094] (6) feed nitrogen into the furnace to make the furnace pressure of the annealing furnace rise;

[0095] (7) out of the boat;

[0096] Wherein, the pressure in the furnace of step (3)(4)(5) is maintained at 100-300mbar.

[0097] The technical parameters in the embodiment 1 group are specifically referred to in Table 1:...

Embodiment 1-1

[0101] Embodiment 1-1: the pressure in the furnace is 100mbar;

Embodiment 1-2

[0102] Embodiment 1-2: the pressure in the furnace is 200mbar;

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a low-pressure annealing method of a crystalline silicon solar cell, wherein the method comprises the steps: (1) introducing nitrogen into an annealing furnace, and regulating the in-furnace pressure and the in-furnace temperature of the annealing furnace; (2) putting a quartz boat loaded with a silicon wafer into the annealing furnace; (3) vacuumizing the annealing furnace, introducing nitrogen and oxygen, and adjusting the in-furnace pressure; (4) carrying out thermal oxidation treatment on the silicon wafer to form a silicon oxide layer; (5) annealing the silicon wafer; (6) introducing nitrogen into the annealing furnace to enable the pressure in the annealing furnace to rise again; and (7) discharging the boat, wherein the in-furnace pressure in the step (3), the step (4) and the step (5) is kept at 100-300 mbar. According to the invention, thermal oxidation treatment and annealing treatment are carried out under a low-pressure condition, the operation is simple and controllable, and a uniform and compact silicon oxide layer can be grown by adopting the method, so that the conversion efficiency and reliability of the cell are improved.

Description

technical field [0001] The invention relates to the technical field of batteries, in particular to a low-pressure annealing method for a crystalline silicon solar battery. Background technique [0002] With the reduction of non-renewable energy sources and the increasingly prominent environmental problems, people's pursuit of clean energy is becoming increasingly intense. As a renewable clean energy, solar energy is more and more favored by people. A solar cell is a device that can effectively absorb solar radiation energy and convert light energy into electrical energy by using the photovoltaic effect, and the battery sheet is an important part of the device. Improving the efficiency and reliability of cells and reducing the cost of cells are crucial to the development of solar photovoltaic cells. [0003] At present, the conventional P-type PERC battery mainly includes processes: texturing, diffusion, SE laser, etching, annealing, PERC coating, PECVD coating, laser groov...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L31/18H01L31/068
CPCY02E10/547Y02P70/50
Inventor 吴疆杨苏平陈刚
Owner GUANGDONG AIKO SOLAR ENERGY TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com