Low-pressure annealing method for crystalline silicon solar cell
A solar cell, low-voltage technology, applied in circuits, electrical components, photovoltaic power generation, etc., can solve the problems of unstable gas flow in the tube, restricting the development of battery technology, unfavorable silicon oxide layer growth, etc. Effect of anti-PID performance, short-circuit current and open-circuit voltage improvement
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[0088]Example 1 Set of crystalline silicon solar cells with different pressure in the retaining furnace, including:
[0089](1) Turn nitrogen in the annealing furnace, regulate the internal pressure and internal temperature of the annealing furnace;
[0090](2) Put the quartz boat loaded with the silicon wafer into the annealing furnace;
[0091](3) Take the annealing furnace to take nitrogen and oxygen, regulate the pressure in the furnace;
[0092](4) The wafer is thermally oxidized to form a silicon oxide layer;
[0093](5) Annealing the silicon wafer;
[0094](6) Turn nitrogen into the furnace, so that the pressure in the furnace of the annealing furnace will rise;
[0095](7)
[0096]Among them, the furnace pressure of step (3) (4) (5) is maintained at 100-300 mbar.
[0097]The process parameters in the first group are specifically see Table 1:
[0098]Table 1 Example 1 Group Process Parameters
[0099]
Example Embodiment
[0101]Example 1-1: The pressure of the furnace is 100 mbar;
Example Embodiment
[0102]Example 1-2: Inner pressure in the furnace is 200 mbar;
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