N-type nanometer black silicon manufacturing method and solar cell manufacturing method
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- ZHEJIANG JINKO SOLAR CO LTD
- Publication Date
- 2015-03-11
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Abstract
Description
technical field
[0001] The invention relates to the field of photovoltaic technology, in particular to a method for preparing N-type nano black silicon and a method for preparing solar cells. Background technique
[0002] Optical loss is a major factor hindering the improvement of solar cell efficiency, and reducing the optical loss of solar cells is an important and effective way to improve cell efficiency. At present, crystalline silicon mainly adopts "pyramid" texture anti-reflection structure on the surface of silicon wafer to reduce the reflectivity, but its average reflectivity in the visible light band is above 10%, and the reflection loss of light is still relatively large, which restricts the efficiency of solar cells. Further improve.
[0003] The nanoporous black silicon structure can effectively reduce the reflectivity of the anti-reflection structure. It can be prepared by electrochemical methods and metal-assisted catalysis. Metal-assisted catalysis has rece...