N-type nanometer black silicon manufacturing method and solar cell manufacturing method
A solar cell, N-type technology, applied in the direction of nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., can solve the problems of industrial application obstacles and high cost, and achieve the purpose of reducing corrosion depth, increasing lifespan, Effect of increasing short-circuit current and open-circuit voltage
Active Publication Date: 2015-03-11
ZHEJIANG JINKO SOLAR CO LTD
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Abstract
The invention discloses an N-type nanometer black silicon manufacturing method and a solar cell manufacturing method. The N-type nanometer black silicon manufacturing method comprises steps that: (1), silicon chips after cleaning react in mixed solution of KOH and isopropanol for 0.5-2 hours, and the reaction temperature is 60-100 DEG C; and (2), the N-type silicon chips treated in the step (1) are put in a silver nanometer particle solution for 20-30 minutes in a standing mode, after drying, corrosion treatment on the treated N-type silicon chips is carried out to acquire the N-type nanometer black silicon. For manufacturing a solar cell, an N+ layer, a silicon nitride layer and an electrode layer are sequentially formed at the front surface of the manufactured N-type nanometer black silicon, after sintering, the N-type nanometer black silicon solar cell is manufactured. The manufactured N-type nanometer black silicon solar cell has properties of low reflectivity and high carrier service life and has the conversion efficiency 2.2% higher than that of a cell manufactured through a routine method.
Application Domain
Material nanotechnologyFinal product manufacture +2
Technology Topic
Silicon nitrideCorrosion +12
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PUM
Property | Measurement | Unit |
Size | 50.0 ~ 100.0 | nm |
Life expectancy | 10.2 | µs |
Life expectancy | 2.73 | µs |
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