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Modulation method and structure of gallium nitride device characteristics

A modulation method and gallium nitride device technology, which is applied in the direction of semiconductor devices, semiconductor/solid-state device testing/measurement, electrical components, etc., can solve problems such as inability to modulate, reliability problems, etc., and achieve the effect of promoting full play

Pending Publication Date: 2021-04-20
BEIJING DONGFANG MEASUREMENT & TEST INST
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] According to extensive investigations, traditional ways of adjusting the intrinsic structure of GaN devices are commonly used at home and abroad to optimize the performance of GaN devices, such as ion treatment, design of passivation layer structure, V-shaped gate structure, etc., but changing the intrinsic structure of the device The structure will bring reliability problems, and after the structure is determined, the modulation in the application process cannot be performed according to the actual application scenario

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  • Modulation method and structure of gallium nitride device characteristics

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Embodiment Construction

[0036] Those skilled in the art should know that the specific structures, dimensions, and proportions shown in the accompanying drawings of this application are used to illustrate the implementation of the present invention, and are not intended to limit the scope of the claims of the present invention, and the scope of the claims should be based on the claims .

[0037] Embodiments of the present invention will be described below with reference to the accompanying drawings.

[0038] The modulation method of the gallium nitride device characteristic of the present invention mainly comprises:

[0039] Applying an external electric field to the gallium nitride device, wherein the external electric field is coupled to act on the gallium nitride device; the characteristics of the gallium nitride device are modulated according to the strength and direction of the external electric field.

[0040] Gallium nitride devices have high breakdown voltage, high critical electric field, hi...

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Abstract

The invention relates to the technical field of semiconductors, and provides a modulation method and structure of gallium nitride device characteristics. The method mainly comprises the following steps: applying an external electric field to a gallium nitride device, wherein the external electric field acts on the gallium nitride device through inverse piezoelectric effect coupling; and modulating the characteristics of the gallium nitride device by changing the intensity and direction of the external electric field. The characteristics of the gallium nitride device can be specifically modulated by adjusting the intensity and direction of the external electric field according to different application scenes of the gallium nitride device so that the application requirements of the gallium nitride device in different scenes are met, and the performance of the gallium nitride device is brought into full play; and the gallium nitride device is driven to be more effectively utilized in national defense military fields such as space navigation, radar and electronic countermeasure and civil fields such as 5G, power electronics and the like.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method and structure for modulating characteristics of gallium nitride devices. Background technique [0002] As a typical representative of the third-generation semiconductor materials, gallium nitride (GaN) materials have attracted widespread attention due to their high band gap, high breakdown voltage, and high resistance to radiation and corrosion, especially due to the The spontaneous polarization and piezoelectric polarization properties of gallium materials, the heterostructure formed by the epitaxial growth of extremely thin barrier layers (aluminum gallium nitride, indium gallium nitride or aluminum nitride) on gallium nitride, without any Doping can form a high-concentration two-dimensional electron gas at the heterojunction interface, and because the two-dimensional electron gas has a strong quantum confinement effect in the direction perpendicular to the hete...

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Application Information

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IPC IPC(8): H01L21/66H01L29/20H01L29/778
Inventor 杨铭季启政袁亚飞高志良梅高峰张宇冯娜韩炎晖
Owner BEIJING DONGFANG MEASUREMENT & TEST INST