Uniform electroplating thickening method for ceramic dielectric filter with blind holes and through holes

A ceramic dielectric and uniform electroplating technology, which is applied in the direction of waveguide devices, circuits, electrical components, etc., can solve problems such as the inability to meet the requirements of ceramic dielectric filters for the thickness consistency of the surface metal layer

Active Publication Date: 2021-04-23
SOUTHWESTERN INST OF PHYSICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to provide a method for uniform electroplating thickening of ceramic dielectric filters with blind holes and through holes. The method of the present invention uses vacuum ion plating to prepare a seed layer and then uses a combination of electroplating to thicken the metal layer for surface metallization. On the premise of ensuring the bonding force, the production efficiency is improved; by setting the dielectric diversion film, it effectively solves the one-time electroplating method of blind holes and through-hole structural parts in the prior art, which cannot meet the requirements of the ceramic dielectric filter on the surface metal. Requirements for Layer Thickness Consistency

Method used

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  • Uniform electroplating thickening method for ceramic dielectric filter with blind holes and through holes
  • Uniform electroplating thickening method for ceramic dielectric filter with blind holes and through holes
  • Uniform electroplating thickening method for ceramic dielectric filter with blind holes and through holes

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Embodiment 1

[0035] Step (1), preparation of seed layer

[0036] Use anhydrous ethanol to ultrasonically clean the ceramic dielectric filter for 20 minutes, put it in an oven at 300°C for 1 hour, then lower it to room temperature and take it out; then put it in a vacuum chamber, and prepare a seed layer copper layer on the surface of the ceramic dielectric filter by vacuum ion plating , the vacuum chamber is preheated at 200°C, and the vacuum is at 1×10 -3 At Pa, argon gas was introduced and the vacuum was maintained at 7×10 -2 Pa, turn on the arc copper target power supply, set the arc current to 50A, and the coating time depends on the metal deposition rate. In this embodiment, the coating time is 1h, and the thickness of the prepared seed layer copper layer is 500nm.

[0037] Step (2), wrapping the medium diversion film

[0038] The polyimide film (PI film) with good acid and alkali resistance and temperature resistance is used as the dielectric guide film, and the method of laser dri...

Embodiment 2

[0048] Step (1), preparation of seed layer

[0049] Use anhydrous ethanol to ultrasonically clean the ceramic dielectric filter for 20 minutes, put it in an oven at 300°C for 1 hour, then lower it to room temperature and take it out; then put it in a vacuum chamber, and prepare a seed layer of titanium on the surface of the ceramic dielectric filter by vacuum ion plating Add copper layer, preheat the vacuum chamber at 200°C, vacuum at 1×10 -3 At Pa, argon gas was introduced and the vacuum was maintained at 7×10 -2 Pa, first turn on the arc titanium target power supply, set the arc current to 50A, and the coating time is 20min; then turn off the titanium target power supply, turn on the copper target power supply, set the arc current to 50A, and the coating time is 48min; the thickness of the prepared seed layer is 100nm for the titanium layer , copper layer 400nm.

[0050] Step (2), wrapping the medium diversion film

[0051] The polyimide film (PI film) with good acid and ...

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Abstract

The invention belongs to the field of non-metal surface metallization, and relates to a uniform electroplating thickening method for a ceramic dielectric filter with blind holes and through holes. The method comprises the steps of: preparing a seed layer, wrapping a dielectric diversion film, electroplating a thickened metal layer and taking out a ceramic dielectric filter. According to the method, the seed layer is prepared through vacuum ion plating, and then surface metallization is carried out through a combination mode of electroplating the thickened metal layer, so that the production efficiency is improved on the premise that the binding force is ensured; the dielectric diversion film is adopted, so that the problem that a one-time electroplating method for blind hole and through hole structural parts cannot meet the requirement of a ceramic dielectric filter for the thickness consistency of a surface metal layer in the prior art is effectively solved.

Description

technical field [0001] The invention belongs to the field of non-metallic surface metallization, and in particular relates to a uniform electroplating thickening method for a ceramic dielectric filter with blind holes and through holes. Background technique [0002] Ceramic dielectric filters for 5G communications have the characteristics of small size, low dielectric, low loss, good thermal stability and electromagnetic shielding. Due to their high dielectric constant, high quality factor, and good temperature stability, ceramic dielectric filters are also widely used in wireless communications, aerospace, and military radar to make various passive microwave components, such as dielectric capacitors, microwave Filters and Dielectric Antennas etc. The metal layer on the surface of the ceramic dielectric determines the conductance loss of the filter, thereby affecting the overall insertion loss performance of the filter. Therefore, surface metallization is a key technology f...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01P11/00
CPCH01P1/2002H01P11/007
Inventor 陈美艳唐德礼刘旋刘彤
Owner SOUTHWESTERN INST OF PHYSICS
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