Preparation method for silicon nitride film, solar cell with silicon nitride film and preparation method for solar cell

A solar cell and silicon nitride film technology, which is applied in the field of solar cells, can solve the problems of silicon nitride film color chromatic aberration, silicon nitride film growth rate inconsistency, etc., to reduce the level of silicon wafers, improve the growth rate too fast, The effect of improving the pass rate
CN102856174BActive Publication Date: 2014-12-31YINGLI ENERGY CHINA

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
YINGLI ENERGY CHINA
Publication Date
2014-12-31

Smart Images

  • Figure 1
    Figure 1
Patent Text Reader

Abstract

The invention discloses a preparation method for a silicon nitride film, a solar cell with the silicon nitride film and a preparation method for the solar cell. The preparation method for the silicon nitride film includes following steps: S1, placing a silicon wafer into a tubular furnace; S2, feeding nitrogen into the tubular furnace, heating the tubular furnace under the atmosphere of nitrogen to 340 DEG C to 360 DEG C, and maintaining the temperature for 500 seconds to 2000 seconds; and S3, utilizing the PECVD (plasma enhanced chemical vapor deposition) method to sequentially form a first silicon nitride film layer and a second silicon nitride film layer on the silicon wafer. The first silicon nitride film layer is arranged on the silicon wafer before the temperature of the tubular furnace is maintained, so that temperatures around and in the middle of the silicon wafer are uniform after the step of temperature maintaining of the silicon wafer, growth rate of the silicon nitride film around and in the middle of the silicon wafer is guaranteed, overhigh growth rate caused by higher temperature at the edge of the silicon wafer is improved, the problem of color deviation caused by different thicknesses and refractive indexes of the silicon nitride film at various positions on the surface of the silicon wafer is solved, grade of the silicon wafer is lowered, and acceptance rate of the silicon wafer is improved.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to the field of solar cells, in particular to a method for preparing a silicon nitride film, a solar cell with a silicon nitride film and a method for preparing the same. Background technique

[0002] A solar cell, also called a photovoltaic cell, is a semiconductor device that converts the sun's light directly into electrical energy. Because it is a green product, does not cause environmental pollution, and is a renewable resource, solar cells are an energy source with broad development prospects in today's energy shortage situation. The manufacturing process of solar cells generally has the following steps: chemical cleaning and surface texture treatment, diffusion junction, peripheral etching, silicon nitride film deposition, screen printing, and sintering. In the silicon nitride film deposition step, plasma-enhanced chemical vapor deposition (PECVD) is a commonly used method for preparing silicon nitride films.

[0003] Plas...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More