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Manufacturing method of high-precision polycrystalline low resistance

A high-precision, low-resistance technology, applied in the field of MEMS technology, can solve problems such as the inability to guarantee resistance accuracy

Pending Publication Date: 2021-04-27
WUXI ZHONGWEI JINGYUAN ELECTRONIC CO LTD
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  • Summary
  • Abstract
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  • Claims
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Problems solved by technology

[0003] The purpose of the present invention is to provide a high-precision polycrystalline low-resistance manufacturing method to solve the problem that conventional methods for reducing square resistance cannot guarantee resistance accuracy

Method used

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  • Manufacturing method of high-precision polycrystalline low resistance
  • Manufacturing method of high-precision polycrystalline low resistance
  • Manufacturing method of high-precision polycrystalline low resistance

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Embodiment 1

[0021] The invention provides a high-precision polycrystalline low-resistance manufacturing method, the process of which is as follows figure 1 As shown, it specifically includes the following steps:

[0022] Step S11, growing a SiO2 layer on the surface of the substrate;

[0023] Step S12, growing a polysilicon film on the surface of the SiO2 layer;

[0024] Step S13, performing high-temperature annealing on the polysilicon film before implantation;

[0025] Step S14, performing ion implantation on the polysilicon film after high temperature annealing;

[0026] Step S15, growing a SiO2 shielding layer on the surface of the polysilicon film;

[0027] Step S16 , performing post-implantation high temperature annealing.

[0028] Specifically, a layer of SiO2 layer 1 is grown on the surface of the substrate 2 by thermal oxidation, and then a polysilicon film 3 is grown by LPCVD, and the polysilicon film 3 is annealed at a high temperature before implantation, such as figure ...

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Abstract

The invention discloses a manufacturing method of high-precision polycrystalline low resistance, and belongs to the field of MEMS processes. According to the method, the resistance precision is improved through ion implantation, the resistance value of the resistor can be accurately controlled due to the fact that ion implantation can accurately control the types, energy and dosage of implanted ions, the resistance precision is improved, and the precision is made to be smaller than 1%; annealing before implantation: the purpose is to enlarge polycrystalline silicon grains and change a polycrystalline lattice structure, so that a band gap is reduced, and implantation ion activation is facilitated; annealing after implantation: the purpose is to repair lattice damage, move implanted ions to lattice points and activate the ions, so that the resistance value of the polycrystalline silicon resistor is reduced through two times of annealing, and the resistance value can be reduced to be less than 40[ohms]; and reverse diffusion of implanted ions is effectively prevented through the SiO2 layer.

Description

technical field [0001] The invention relates to the technical field of MEMS technology, in particular to a high-precision polycrystalline low-resistance manufacturing method. Background technique [0002] MEMS thermopile sensors can realize accurate temperature sensing and are widely used in non-contact temperature measurement fields, such as high temperature, food, medical temperature measurement, etc. However, when measuring body temperature, the temperature change is very small, so the output signal of the thermopile is weak. In order to increase the signal output and reduce noise interference, researchers usually use low-value polycrystalline resistors. Therefore, realizing high-precision polycrystalline low-resistance is extremely important for product performance improvement. Conventionally, the square resistance is often reduced through the diffusion process, but the resistance accuracy cannot be guaranteed, or the square resistance is reduced by high-dose ion implan...

Claims

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Application Information

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IPC IPC(8): B81B7/02B81C1/00
CPCB81B7/02B81C1/00023B81C1/00349B81C1/00642
Inventor 陈培仓张冠群王涛彭时秋
Owner WUXI ZHONGWEI JINGYUAN ELECTRONIC CO LTD
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