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Heterojunction with perpendicular magnetic anisotropy and preparation method of heterojunction

A vertical anisotropy and anisotropy technology, applied in the field of heterojunction, can solve the problems of unfavorable application and achieve the effect of simple preparation

Active Publication Date: 2021-05-04
SHENZHEN TECH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of the deficiencies in the prior art above, the purpose of the present invention is to provide a heterojunction with perpendicular magnetic anisotropy and its preparation method, aiming at solving the problem that the prior art using pulsed laser deposition can only prepare small-area vertical Magnetic anisotropy Re 3 Fe 5 o 12 Thin film, the problem that is not conducive to its application in industry

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  • Heterojunction with perpendicular magnetic anisotropy and preparation method of heterojunction
  • Heterojunction with perpendicular magnetic anisotropy and preparation method of heterojunction
  • Heterojunction with perpendicular magnetic anisotropy and preparation method of heterojunction

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Embodiment 1

[0047] Gd 3 sc 2 Ga 3 o 12 (sGGG) or Gd 3 Ga 5 o 12 (GGG) single crystal substrate was annealed at 1000°C for 6 hours under an atmosphere of oxygen at atmospheric pressure, and the annealed substrate was favorable for Tm 3 Fe 5 o 12 Thin film growth; the background vacuum of the magnetron sputtering chamber is less than 5x10 -8 Torr(T), the target used in magnetron sputtering is Tm 3 Fe 5 o 12 The ceramic target adopts the method of radio frequency sputtering, and the sputtering power is 100w; according to the needs of preparing thin films with different thicknesses, the sputtering time is 15-90 minutes, and the final prepared Tm 3 Fe 5 o 12 The thickness is 2-12nm. During the sputtering process, the work is Ar, the air pressure is 5-8mT, a small amount of oxygen is introduced, and the oxygen flow rate is 1-10% of the Ar flow rate. During sputtering, the substrate temperature was maintained at 500-800°C. After sputtering, it was naturally cooled to room temper...

Embodiment 2

[0050] Gd 3 sc 2 Ga 3 o 12 (sGGG) or Gd 3 Ga 5 o 12 (GGG) single crystal substrate was annealed at 1000°C for 6 hours in an atmosphere of oxygen at atmospheric pressure, and the annealed substrate was favorable for Gd 3 Fe 5 o 12 Thin film growth; the background vacuum of the magnetron sputtering chamber is less than 5x10 -8 Torr(T), the target used in magnetron sputtering is Gd 3 Fe 5 o 12 The ceramic target adopts the method of radio frequency sputtering, and the sputtering power is 100w; according to the needs of preparing films of different thicknesses, the sputtering time ranges from 30 to 90 minutes, and the final prepared Gd 3 Fe 5 o 12 The thickness is 4-12nm. During the sputtering process, the work is Ar, the air pressure is 5-8mT, a small amount of oxygen is introduced, and the oxygen flow rate is 1-10% of the Ar flow rate. During sputtering, the substrate temperature was maintained at 500-800°C. After sputtering, it was naturally cooled to room tempe...

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Abstract

The invention discloses a heterojunction with perpendicular magnetic anisotropy and a preparation method of the heterojunction. The preparation method comprises the steps that annealing treatment is carried out on a single crystal substrate for later use; under the vacuum condition, a Re3Fe5O12 ceramic target is taken as a target material, and a Re3Fe5O12 film is prepared on the single crystal substrate by adopting a magnetron sputtering mode; and a heavy metal layer is prepared on the surface of the Re3Fe5O12 film by adopting a magnetron sputtering mode under a room temperature condition, so as to prepare the heterojunction with the heterojunction magnetic anisotropy. The preparation method is simple in preparation, economical and applicable, can be used for preparing the large-area Re3Fe5O12 film, is suitable for industrial production, and provides possibility for application of a Re3Fe5O12 material in the field of random access memory devices.

Description

technical field [0001] The invention relates to the technical field of heterojunction, in particular to a heterojunction with perpendicular magnetic anisotropy and a preparation method thereof. Background technique [0002] Ferrimagnetic insulator materials have a wide range of applications in the field of spintronics. Rare earth iron garnet (Re 3 Fe 5 o 12 , Re is a rare earth element, usually Y, Tm, Tb, Gd, etc.) is regarded as an ideal ferrimagnetic insulator material, which has potential applications in the field of magnetic storage. When Re 3 Fe 5 o 12 When the layer is very thin, the anisotropy in the atomic orbital is reflected, and the interface anisotropy is strong enough to overcome the shape anisotropy, so Re 3 Fe 5 o 12 layer produces perpendicular magnetic anisotropy. Perpendicular magnetic anisotropy is useful for studying Re 3 Fe 5 o 12 / The quantum anomalous Hall effect of heavy metal (Pt, Ta, W, etc.) heterojunctions is very important. This pe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/08C23C14/18
CPCC23C14/35C23C14/08C23C14/185Y02P70/50
Inventor 安红雨叶志祥仇明侠
Owner SHENZHEN TECH UNIV