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A kind of preparation method of carbon-doped molybdenum disulfide nanometer material

A technology of molybdenum disulfide and nanomaterials, applied in the field of two-dimensional nanomaterials, can solve the problems of complex and difficult preparation parameters, and achieve the effect of simple preparation technology and low cost

Active Publication Date: 2021-11-09
ZHEJIANG UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are certain difficulties in the synthesis of such alloy materials, and the preparation parameters that need to be controlled are complex [Materials Research Express 4, 045004(2017)]
[0004] In summary, transition metal chalcogenides such as MoS 2 Materials have energy band structure and light emission wavelength limitations, and alloy materials of transition metal chalcogenides such as MoS x Se 2(1-x) Technical problems such as preparation difficulties, thus, it is difficult to meet the application requirements of optoelectronic devices

Method used

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  • A kind of preparation method of carbon-doped molybdenum disulfide nanometer material
  • A kind of preparation method of carbon-doped molybdenum disulfide nanometer material
  • A kind of preparation method of carbon-doped molybdenum disulfide nanometer material

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Embodiment 1

[0027] In this embodiment, quartz tube chemical vapor deposition equipment is used. MoO with 0.5% carbon 3 powder (approximately 10 mg) laid on Si / SiO 2 On the target substrate, this substrate is loaded into quartz tube furnace together with elemental sulfur, and this substrate and elemental sulfur are separated certain distances such as 12cm. Vacuum the quartz tube furnace, then heat the substrate area to 750°C within 60 minutes, and keep the reaction at a constant temperature for 10 minutes; while heating the substrate area, heat the S source to 130°C. After the reaction, it was naturally cooled to room temperature. In this way, carbon-doped 2D MoS 2 film. The high-temperature furnace is kept at low pressure (for example, the pressure is about 0.1 Pa) throughout the whole process, and an inert gas such as argon is introduced as a carrier gas during the whole process, and the flow rate is about 100 sccm.

[0028] For the carbon-doped MoS prepared in Example 1 2 Thin fil...

Embodiment 2

[0031] In this example, MoO containing 0.1% carbon 3 The powder (about 15 mg) is laid on the mica target substrate, which is charged into the high temperature furnace together with the elemental sulfur, and the substrate is separated from the elemental sulfur by a certain distance such as 10 cm. Vacuum the high-temperature furnace, then heat the substrate area, first raise the temperature to 500°C at a rate of 20°C per minute, and then keep it for 5 minutes; then raise the temperature to 850°C within 10 minutes, and keep the reaction at a constant temperature for 20 minutes; while heating the substrate region, the S source is heated to 120°C. After the reaction, it was naturally cooled to room temperature to obtain carbon-doped 2D MoS 2 film. The high-temperature furnace is maintained at normal pressure throughout the process, and an inert gas such as argon is introduced as a carrier gas during the entire process, and the flow rate is about 50 sccm.

[0032] For the carbon-...

Embodiment 3

[0035] In this example, MoO containing 2.0% carbon 3 The powder (about 20 mg) is laid on the sapphire target substrate, and this substrate is loaded into the high temperature furnace together with the elemental sulfur, and the substrate is separated from the elemental sulfur by a certain distance, such as 18cm. Vacuum the high-temperature furnace, then heat the substrate area, first raise the temperature to 400°C at a rate of 10°C per minute, and then keep it for 10 minutes; then raise the temperature to 650°C within 15 minutes, and maintain a constant temperature for 30 minutes; while heating the substrate region, the S source is heated to 150°C. After the reaction, it was naturally cooled to room temperature to obtain carbon-doped 2D MoS 2 film. The high-temperature furnace is kept at a low pressure of 2000 Pa during the whole process, and an inert gas such as nitrogen is introduced as a carrier gas during the whole process, and the flow rate is about 200 sccm.

[0036] F...

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Abstract

The invention discloses a method for preparing carbon-doped molybdenum disulfide nanomaterials, the preparation method comprising: (1) adding C-containing MoO 3 The source material and the S source material are placed in different positions of the chemical vapor deposition equipment; (2) the chemical vapor deposition equipment is heated, and the MoO containing C is controlled separately 3 The source material and the temperature at the position of the S source material react to obtain carbon-doped molybdenum disulfide nanomaterials. The preparation method provided by the invention is simple, by controlling MoO 3 Depending on the content of C in the source material and the reaction temperature, different carbon-doped molybdenum disulfide nanomaterials can be simply obtained, and the prepared materials have different energy band structures, and the preparation cost is low.

Description

technical field [0001] The invention relates to the technical field of two-dimensional nanomaterials, in particular to a method for preparing carbon-doped molybdenum disulfide nanomaterials. Background technique [0002] With the development of chip miniaturization and multi-function, the optical and electronic devices contained in it put forward higher requirements for materials. New two-dimensional materials such as graphene and transition metal chalcogenides such as molybdenum disulfide have many unique properties that traditional materials do not have, so they have attracted extensive attention from academia and industry. [0003] Two-dimensional molybdenum disulfide (MoS 2 ) is a layered material. Due to the different number of layers, its bandgap width is about 1.2-1.9eV, and only when MoS 2 When it is a single layer, it is a direct band gap semiconductor (the band gap is about 1.9eV), and it has the characteristic of emitting light at a characteristic wavelength, so...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/30B82Y40/00C01G39/06
CPCB82Y40/00C01G39/06C23C16/305
Inventor 徐明生梁涛冯志红蔚翠
Owner ZHEJIANG UNIV
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