AlGaN-based double-channel Schottky diode based on groove anode structure and preparation method

Abstract

The invention relates to an AlGaN-based double-channel Schottky diode based on a groove anode structure and a preparation method. The diode comprises a substrate, a buffer layer, a channel layer, a first barrier layer, a superlattice layer, a second barrier layer and a GaN cap layer, an anode and a cathode; the substrate, the buffer layer, the channel layer, the first barrier layer, the superlattice layer, the second barrier layer and the GaN cap layer are sequentially stacked from bottom to top; a first conductive channel is formed between the channel layer and the first barrier layer; a second conductive channel is formed between the superlattice layer and the second barrier layer; the anode is arranged on the GaN cap layer; the bottom of the anode sequentially penetrates through the GaN cap layer and the second barrier layer; the anode is located in the superlattice layer; the anode and the superlattice layer form Schottky contact; the cathode is arranged on the GaN cap layer and surrounds the periphery of the anode; a distance exists between the cathode and the anode; and the cathode and the GaN cap layer form ohmic contact. According to the AlGaN-based double-channel Schottky diode based on the groove anode structure, the conductive channels are adopted, so that the electron concentration is improved, and the on-resistance is reduced.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and in particular relates to an AlGaN-based double-channel Schottky diode based on a recessed anode structure and a preparation method. Background technique [0002] A GaN Schottky barrier diode (SBD for short) is an important GaN power device. Since GaN is a multisub device, the minority carrier charge storage effect is very weak. When the device is turned off, there is only a displacement current caused by the junction capacitance. Compared with the reverse recovery storage charge generated by the p-n junction diode, the charge transferred by the displacement current is almost can be ignored, thus reducing the switching loss of the SBD device. [0003] Because GaN SBD devices have so many advantages, a lot of research has been done on them. In order to realize GaN SBD devices, there are many manufacturing methods in the industry. The more commonly used method is to deposit a cat...

AI Technical Summary

Problems solved by technology

The SBD device directly using the AlGaN alloy channel is greatly reduced due to the influence of alloy disorder scattering, which greatly reduces the mobility of the AlGaN / GaN heterostructure, which greatly limits the application of GaN Schottky diodes in the field of power electronics.

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