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Organic molecule-based antiferroelectric material, preparation method and application thereof

A technology of antiferroelectrics and organic molecules, applied in the field of preparation of organic molecule-based antiferroelectric materials, can solve the problems of restricting development, high temperature sintering, phase separation and precipitation, etc.

Active Publication Date: 2021-05-18
FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the application of inorganic antiferroelectric materials is often limited by the high-temperature sintering required in the preparation process, the relatively expensive preparation cost, and the easy phase separation and precipitation. At the same time, the synthesis process often involves heavy metal elements that are harmful to the environment, such as lead. its development

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  • Organic molecule-based antiferroelectric material, preparation method and application thereof
  • Organic molecule-based antiferroelectric material, preparation method and application thereof
  • Organic molecule-based antiferroelectric material, preparation method and application thereof

Examples

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Embodiment 1

[0031] The preparation method of an organic molecular-based antiferroelectric material comprises the following steps: at room temperature, cyclohexylmethylamine is dropped into hydrobromic acid according to a stoichiometric ratio of 1:1, heated to 80°C, and then stirred until dissolved A clear solution is formed, and then the resulting solution is placed in an 80°C thermostat and slowly dropped to 30°C to obtain the organic molecule-based antiferroelectric material, namely cyclohexylmethylamine bromide, with a yield of 95%, its structure diagram is as follows figure 1 , 2 The shown organic molecule-based antiferroelectric material is an orthorhombic Pbca space group at room temperature, and the unit cell parameters are a=8.1818(2), b=7.9363(3), Z=8,

[0032] When the temperature rises to 354K, it transforms into a ferroelectric phase, the tetragonal P4mm space group, and the unit cell parameters are

[0033] When the temperature rises above 364K, it turns into a pa...

Embodiment 2

[0035] The preparation method of an organic molecular-based antiferroelectric material comprises the following steps: at room temperature, cyclohexylmethylamine is dropped into hydrobromic acid according to a stoichiometric ratio of 1:1, heated to 60° C., and then stirred until dissolved A clear solution is formed, and then the resulting solution is placed in an incubator at 80°C and slowly lowered to 40°C to obtain the orthorhombic Pbca space group of the organic molecule-based antiferroelectric material at room temperature, The unit cell parameters are a=8.1818(2), b=7.9363(3), Z=8,

[0036] When the temperature rises to 354K, it transforms into a ferroelectric phase, the tetragonal P4mm space group, and the unit cell parameters are

[0037] When the temperature rises above 364K, it turns into a paraelectric phase, the space group changes to P4 / nmm, and the unit cell parameters are

Embodiment 3

[0039] The preparation method of an organic molecular-based antiferroelectric material comprises the following steps: at room temperature, cyclohexylmethylamine is dropped into hydrobromic acid according to a stoichiometric ratio of 1:1, heated to 100° C., and then stirred until dissolved A clear solution is formed, and then the resulting solution is placed in an incubator at 80°C and slowly lowered to 45°C to obtain the orthorhombic Pbca space group of the organic molecule-based antiferroelectric material at room temperature, The unit cell parameters are a=8.1818(2), b=7.9363(3), Z=8,

[0040] When the temperature rises to 354K, it transforms into a ferroelectric phase, the tetragonal P4mm space group, and the unit cell parameters are

[0041] When the temperature rises above 364K, it turns into a paraelectric phase, the space group changes to P4 / nmm, and the unit cell parameters are

[0042] Application of the organic molecular antiferroelectric crystal material...

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Abstract

The invention relates to an organic molecule-based antiferroelectric material, a preparation method and application thereof, wherein the chemical formula of the organic molecule-based antiferroelectric material is C7H16NBr, the organic molecule-based antiferroelectric material is an orthorhombic system Pbca space group at room temperature, the cell parameters are as follows: a is 8.1818 (2), b is 7.9363 (3) and Z is 8, the temperature rises to 354K, the organic molecule-based antiferroelectric material is converted into a ferroelectric phase, and when the temperature rises to be higher than 364K, the organic molecule-based antiferroelectric material is converted into a paraelectric phase. The organic molecule-based antiferroelectric material disclosed by the invention is simple in synthesis method, low in cost, mild in reaction condition and relatively high in stability, and is an organic molecule antiferroelectric compound with relatively high saturation polarization intensity.

Description

technical field [0001] The invention belongs to the field of functional materials, and in particular relates to an organic molecule-based antiferroelectric material, a preparation method and an application thereof. Background technique [0002] Antiferroelectrics are an important class of functional materials, which have a wide range of applications in energy storage capacitors, transducers, and voltage modulation components. Adjacent unit cells that make up this type of material exhibit antiparallel alignment within a certain temperature range, and the macroscopic polarization is zero. The discovery of antiferroelectricity and antiferroelectric materials originated in the 1950s. In 1951, American physicist C.Kittle started from the phenomenological theory and proposed the basic concept of "antiferroelectricity (antiferroelectric)"— "Similar to the ferroelectric phase, the ions in the lattice of the antiferroelectric crystal undergo displacement spontaneous polarization, bu...

Claims

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Application Information

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IPC IPC(8): C07C211/17C07C209/00H01G11/30H01G11/86G02F1/361G02F1/35
CPCC07C211/17C07C209/00H01G11/30H01G11/86G02F1/3611G02F1/353C07B2200/13C07C2601/14Y02E10/549
Inventor 孙志华徐豪杰韩世国刘艺罗军华
Owner FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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