ALD machining equipment and method

A technology of processing equipment and heaters, applied in metal material coating process, gaseous chemical plating, coating and other directions, can solve the problems of poor uniformity of deposited film, waste of precursor source, difficult quality assurance, etc. The effect of improving utilization and reducing volume
CN112853320AInactive Publication Date: 2021-05-28ADVANCED MATERIALS TECH & ENG INC
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Patent Information

Authority / Receiving Office
CN Β· China
Current Assignee / Owner
ADVANCED MATERIALS TECH & ENG INC
Publication Date
2021-05-28
Estimated Expiration
Not applicable Β· inactive patent

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Abstract

The invention relates to ALD machining equipment and method. A reactor of the machining equipment comprises a vacuum chamber and a reaction chamber arranged in the vacuum chamber, an air inlet channel and an air outlet channel which are oppositely arranged are formed in the bottom of the reaction chamber, a first material opening is formed in the side wall of the reaction chamber, a second material opening is formed in the side wall of the vacuum chamber, and a feeding chamber is arranged on the outer side of the reactor. A third material opening and a fourth material opening are formed in the side face of the feeding cavity, a third sealing door capable of being opened is arranged between the third material opening and the second material opening, a fourth sealing door capable of opening and closing the fourth material opening is arranged on the feeding cavity, and the conveying device is arranged in the feeding cavity and comprises a conveying mechanism, a first sealing door and a second sealing door. The first sealing door can seal the first material opening, the second sealing door can seal the second material opening, and a supporting piece used for containing a base body is arranged on the side face, back on to the second sealing door, of the first sealing door. According to the ALD machining equipment and method, the forming quality and consistency of a deposited film are guaranteed.
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Description

technical field

[0001] The invention relates to the technical field of semiconductor nano film deposition, in particular to an ALD processing equipment and a processing method. Background technique

[0002] With the continuous improvement of IC complexity, according to the famous Moore's Law and the international semiconductor technology development roadmap published by the International Semiconductor Industry Association, the characteristic size of metal-oxide-semiconductor field effect transistor devices in silicon-based semiconductor integrated circuits will reach nanometers scale. Atomic Layer Deposition (ALD) has the characteristics of excellent three-dimensional conformality, large-area uniformity and precise sub-monolayer film thickness control, and is favored by the microelectronics industry and nanotechnology.

[0003] In the prior art, the technical scheme of atomic layer deposition processing is: place the substrate in a sealed reactor, and then alternately pass ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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