Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

ALD machining equipment and method

A technology of processing equipment and heaters, applied in metal material coating process, gaseous chemical plating, coating and other directions, can solve the problems of poor uniformity of deposited film, waste of precursor source, difficult quality assurance, etc. The effect of improving utilization and reducing volume

Inactive Publication Date: 2021-05-28
ADVANCED MATERIALS TECH & ENG INC
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The invention provides an ALD processing equipment and processing method, which solves or partially solves the technical problems of poor uniformity of deposited film in the prior art, difficult quality assurance, low film forming efficiency, long cycle, and waste of precursor source

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • ALD machining equipment and method
  • ALD machining equipment and method
  • ALD machining equipment and method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] This embodiment discloses an ALD processing equipment.

[0053] figure 1 It is a structural schematic diagram of a kind of ALD processing equipment of the present embodiment, combined with figure 1 , the ALD processing equipment of this embodiment includes a reactor, a feeding chamber and a conveying device.

[0054] combine figure 1 , the reactor of this embodiment includes a vacuum chamber 1 and a reaction chamber 2, and the reaction chamber 2 is built in the vacuum chamber 1.

[0055] figure 2 It is a structural schematic diagram of the vacuum chamber of this embodiment, image 3 It is a structural schematic diagram of the reaction chamber of the present embodiment, combined with Figure 1-Figure 3 , the side wall of the reaction chamber 2 of the present embodiment is provided with a first feed port 3, the side wall of the vacuum chamber 1 is provided with a second feed port 4, and the first feed port 3 and the second feed port 4 are located in the reaction cha...

Embodiment 2

[0061] This embodiment provides a reaction chamber suitable for the ALD processing equipment shown in Embodiment 1.

[0062] Figure 4 It is a schematic top view of the reaction chamber of this embodiment, combined with image 3 as well as Figure 4 The bottom of the reaction chamber 2 in this embodiment is provided with an inlet channel 9 and an outlet channel 10 , and the inlet channel 9 and the outlet channel 10 are arranged opposite to each other at the center line of the bottom of the reaction chamber 2 .

[0063] During specific implementation, the precursor source is injected into the reaction chamber 2 from the inlet channel 9 of the reaction chamber 2, and is discharged from the gas outlet channel 10 of the reaction chamber 2, because the gas inlet channel 9 and the gas outlet channel 10 react with each other. The center line of the bottom of the chamber 2 is relatively arranged, therefore, the fluid field in the reaction chamber 2 is a laminar flow, and the intake ...

Embodiment 3

[0068] This embodiment provides a reaction chamber suitable for the ALD processing equipment shown in Embodiment 1 or 2.

[0069] Figure 5 It is a structural schematic diagram of the reaction chamber of Example 3. The difference between the reaction chamber shown in this embodiment and the reaction chamber shown in Example 2 is that two gas uniform plates 11 are arranged in the reaction chamber 2, Two gas uniform plates 11 are oppositely arranged with the center line of the bottom of the reaction chamber 2, and the two gas uniform plates 11 are arranged between the inlet channel 9 and the gas outlet channel 10, and the two gas uniform plates 11 divide the reaction chamber into For the air inlet chamber, the reaction chamber and the air outlet chamber, each gas uniform plate 11 is provided with a plurality of through holes.

[0070] The precursor source can enter the inlet chamber through the inlet channel 9, and then enter the reaction chamber through the uniform gas plate 1...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to ALD machining equipment and method. A reactor of the machining equipment comprises a vacuum chamber and a reaction chamber arranged in the vacuum chamber, an air inlet channel and an air outlet channel which are oppositely arranged are formed in the bottom of the reaction chamber, a first material opening is formed in the side wall of the reaction chamber, a second material opening is formed in the side wall of the vacuum chamber, and a feeding chamber is arranged on the outer side of the reactor. A third material opening and a fourth material opening are formed in the side face of the feeding cavity, a third sealing door capable of being opened is arranged between the third material opening and the second material opening, a fourth sealing door capable of opening and closing the fourth material opening is arranged on the feeding cavity, and the conveying device is arranged in the feeding cavity and comprises a conveying mechanism, a first sealing door and a second sealing door. The first sealing door can seal the first material opening, the second sealing door can seal the second material opening, and a supporting piece used for containing a base body is arranged on the side face, back on to the second sealing door, of the first sealing door. According to the ALD machining equipment and method, the forming quality and consistency of a deposited film are guaranteed.

Description

technical field [0001] The invention relates to the technical field of semiconductor nano film deposition, in particular to an ALD processing equipment and a processing method. Background technique [0002] With the continuous improvement of IC complexity, according to the famous Moore's Law and the international semiconductor technology development roadmap published by the International Semiconductor Industry Association, the characteristic size of metal-oxide-semiconductor field effect transistor devices in silicon-based semiconductor integrated circuits will reach nanometers scale. Atomic Layer Deposition (ALD) has the characteristics of excellent three-dimensional conformality, large-area uniformity and precise sub-monolayer film thickness control, and is favored by the microelectronics industry and nanotechnology. [0003] In the prior art, the technical scheme of atomic layer deposition processing is: place the substrate in a sealed reactor, and then alternately pass ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C16/455
CPCC23C16/45504C23C16/45544
Inventor 万军王辉廖海涛王斌
Owner ADVANCED MATERIALS TECH & ENG INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com