Airflow-free MPCVD single crystal diamond growth method using solid carbon source

Abstract

The invention relates to an airflow-free MPCVD single crystal diamond growth method utilizing a solid carbon source, and aims to solve the problems that a large amount of high-purity hydrogen needs to be consumed and the utilization rate of the carbon source is relatively low in an existing MPCVD monocrystal diamond growth process. The single crystal diamond growth method comprises the following steps: 1, cleaning diamond seed crystals; 2, placing a single crystal diamond seed crystal on a sample support in the center of a sample table, and placing a solid carbon source on the periphery of the single crystal diamond seed crystal; 3, vacuumizing the interior of a reaction cabin, then introducing high-purity hydrogen, and increasing the air pressure and the microwave power; 4, in the airflow-free stable growth process, monitoring the plasma in the reaction cabin by adopting a spectrograph, and adjusting the surface temperature of the solid carbon source by adjusting the microwave power; and 5, ending growth. In the airflow-free growth process, atomic hydrogen etches a solid carbon source to generate a hydrocarbon group, then the hydrocarbon group is transported to the surface of a diamond seed crystal through thermal diffusion particles, the process is continuously and circularly carried out, and rapid growth of the single crystal diamond is achieved.

Description

technical field [0001] The invention belongs to the field of diamond material preparation, and in particular relates to a method for preparing a non-airflow MPCVD single crystal diamond using a solid carbon source as a precursor. Background technique [0002] Synthetic diamond technology has developed rapidly in recent decades, among which high temperature and high pressure (HPHT) and chemical vapor deposition (CVD) are the most widely used. Microwave Plasma Chemical Vapor Deposition (MPCVD) uses microwaves as the energy source, without electrode pollution, and the generated plasma has high stability and energy density, and is the most promising method for preparing large-size, high-quality single-crystal diamond materials one. In the conventional MPCVD single crystal diamond growth process, gaseous carbon sources such as methane and carbon dioxide are usually used as growth precursors, and solid carbon sources such as graphite flakes and graphite powder are also used as pr...

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Problems solved by technology

[0003] The purpose of the present invention is to solve the problem that a large amount of high-purity hydrogen gas needs to be consumed in the existing MPCVD single crystal diamond growth process, and the carbon source utilization rate is low, and a kind of flow-free MPCVD single crystal diamond growth method utilizing solid carbon source is provided

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