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Array type pressure measuring device

A measuring device and array technology, applied in the direction of fluid pressure measurement by changing ohmic resistance, can solve the problem of inaccurate characterization of the temperature state of piezoresistive sensitive chips, complex thermodynamic characteristics of ceramic chip-PCB stack, and limited temperature compensation accuracy To achieve the effect of maintaining long-term stability and comprehensive accuracy, helping heat dissipation management, and reducing assembly stress

Pending Publication Date: 2021-06-01
明晶芯晟(成都)科技有限责任公司
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AI Technical Summary

Problems solved by technology

In the currently disclosed representative technical solutions, the pressure gauge chip is assembled on the ceramic chip-PCB circuit board-metal plate stack, supplemented by bonding materials, to solve the stress-strain problem during the assembly process and the stress problem caused by the mismatch of thermal expansion coefficient , the working state temperature of the piezoresistive sensitive chip is obtained by assembling the temperature sensor on the circuit board; however, the thermodynamic characteristics of the ceramic chip-PCB stack are complex, and the temperature sensor assembled on the circuit board cannot accurately represent the piezoresistive sensitive chip in the working state Temperature state, especially that of piezoresistive sensitive strips, which makes temperature compensation accuracy limited
In addition, other problems existing in the current device are that it is difficult to maintain at the chip level, and it is usually impossible to disassemble and maintain, replace, etc. a single chip in the pressure measurement device

Method used

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Experimental program
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Embodiment 2

[0062] refer to Figure 14 , 15 The difference between this embodiment and Embodiment 1 is that the second alloy substrate 220 and the third alloy substrate 230 are placed in the open cavity 217 on the same side of the first alloy substrate 210, or they can be divided into two parts and placed in the first alloy substrate respectively. The two sides of the alloy substrate 210; the air guide hole 211 is converted according to the position of the second alloy substrate 220, and the direct air guide hole structure in embodiment 1 is connected to the front and back of the first alloy substrate 210. The guide air hole in this embodiment The gas holes 211 communicate with the front surface of the first alloy substrate 210 and the same or different sides; for the rest, refer to Example 1.

Embodiment 3

[0064] refer to Figure 16 The difference between this embodiment and Embodiment 1 is that the first circuit chip 110 is placed in the front open cavity 212 of the first alloy substrate 210 during assembly, and the second circuit chip 120 is placed in the front open cavity 212 of the first alloy substrate 210. The open cavity 215 on the back is connected by bonding or bolts respectively, which is convenient for maintenance and replacement. The second alloy substrate 220 and the third alloy substrate 230 are placed in the open cavity 217 on the same side of the first alloy substrate 210, or they can be divided into two parts and placed on both sides of the first alloy substrate 210 respectively, The air guide holes 130 are converted according to the position of the second alloy substrate, as in Embodiment 2; the top and bottom of the first alloy substrate 210 are respectively provided with a fourth alloy substrate 240 for sealing open cavities; the rest refer to Embodiment 1. ...

Embodiment 4

[0066] refer to Figure 17, the piezoresistive sensitive chip in this embodiment is an absolute pressure piezoresistive sensitive chip 000c. Resistor 001, passivation layer 002, Pad 003 and solder ball 006; an open cavity 004 is formed on the back of the piezoresistive sensitive chip 000c by etching; after vacuuming the open cavity 004 on the back, another piece of silicon or glass 010 is bonded to the back of the piezoresistive sensitive chip 000c to seal the open cavity 004 to form an absolute pressure piezoresistive sensitive chip 000c. Among them, Pad 004 includes at least 1 power pad, 1 ground pad, and 2 signal pads.

[0067] In order to be compatible with the assembly system described in Embodiment 1, solder balls are formed on the front side of the piezoresistive sensitive chip 000 and flip-chip soldered on the interconnect substrate 020 with air guide holes, on which there are electrical wiring layers and corresponding solder balls. Welding pad; then use SU8 or BCB g...

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Abstract

The invention discloses an array type pressure measuring device, and the device comprises a piezoresistive sensitive chip which is used for applying a reference pressure to the front surface of the piezoresistive sensitive chip and applying an external gas pressure to the back surface of the piezoresistive sensitive chip to generate a pressure difference; a circuit system used for converting the generated pressure difference into an electric signal which is in direct proportion to pressure change, outputting the electric signal and performing processing and calculating; and an air path system used for providing air pressure and acting on the two surfaces of the piezoresistive sensitive chip so as to generate the pressure difference. According to the device, the alloy substrate and the piezoresistive sensitive chip are directly bonded through the packaging sealant, and the PCBs are located on the two sides of the piezoresistive sensitive chip to be electrically connected, so that the assembly stress can be reduced, support is provided for precise control over the stress and temperature state of the piezoresistive sensitive chip, and the piezoresistive sensitive chip or related circuit system components are convenient to disassemble and independently replace; and multiple layers of circuit chips are stacked and integrated, and an internal integrated gas circuit system is beneficial to miniaturization of the whole pressure measuring device assembly.

Description

technical field [0001] The invention relates to the field of microelectronic packaging, in particular to an array pressure measuring device. Background technique [0002] The array multi-channel pressure measurement device is widely used in wind tunnel tests or flight tests, which can realize multi-channel rapid pressure measurement. Among them, the MEMS piezoresistive sensitive chip is the core device of the pressure measurement device, which has a decisive impact on the overall performance of the pressure measurement device. . At present, the comprehensive performance improvement of array multi-channel pressure measurement devices faces some core problems that need to be solved and optimized. First, stress and strain will be introduced during device assembly, affecting the performance of piezoresistive sensitive chips. Due to the difference in thermal expansion coefficient between the piezoresistive sensitive chip and other components of the device, the piezoresistive se...

Claims

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Application Information

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IPC IPC(8): G01L9/02
CPCG01L9/02
Inventor 马盛林黄漪婧练婷婷汪郅桢
Owner 明晶芯晟(成都)科技有限责任公司
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