Fluorine-containing compound for immersion photoresist, preparation method thereof, photoresist

Abstract

The invention provides a fluorine-containing compound for immersion photoresist and a preparation method thereof, the method comprising: adding a preliminary compound, 4-dimethylaminopyridine, l-ethyl-(3-di Methylaminopropyl) carbodiimide hydrochloride and chloroform are mixed uniformly to form a reaction system; N, N-dimethylpropylenediamine is added dropwise to the reaction system, and the reaction generates a fluorine-containing compound; wherein, preparing The chemical structure of the compound is n≧1, which is an integer. The invention also provides an immersion photoresist added with fluorine-containing compound. Adding the fluorine-containing compound produced by the preparation process provided by the technical solution to the photoresist can prevent the impurities in the pure water from contaminating the lens of the photolithography machine, and effectively reduce the pollution of the lens by the impurities. Adopting the technical scheme provided by the invention to replace the existing formula of adding a hydrophobic layer has the advantages of simple process, short production cycle, improved production efficiency, and saved production cost.

Description

Fluorine-containing compound for immersion photoresist and preparation method thereof, photoresist technical field The invention belongs to chemical technical field, relate in particular to a kind of fluorine-containing compound for immersion photoresist and preparation thereof Preparation method, photoresist. Background technique Photoresist is one of the key materials in the field of integrated circuit manufacturing. With the continuous development of manufacturing technology, photolithography The technical requirements of photoresist are getting higher and higher. In order to meet the increasingly harsh process conditions, it is necessary to develop photoresist products with higher performance. As the integrated circuit manufacturing process enters the technology node below 45nm, the immersion lithography process is widely used. The lens of the lithography machine uses pure water as the medium. During the production process, in order to prevent impurities in the p...

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Problems solved by technology

[0005] The embodiment of the present invention provides a fluorine-containing compound for immersion photoresist, its preparation method, and photoresist, aiming to solve the problem of increasing the complexity of the process in the existing scheme of controlling the amount of impurity precipitation in immersion photoresist , the production cycle is long, the production efficiency is low, and the disadvantages of increasing the production cost

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