Auxiliary grid slurry suitable for back polishing surface of N-type double-sided battery

A double-sided battery, backside polishing technology, applied to conductive materials, circuits, and electrical components dispersed in non-conductive inorganic materials to achieve high-efficiency performance and good contact characteristics

Active Publication Date: 2021-06-11
上海银浆科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In summary, N-type crystalline silicon cells can achieve better passivation effect and higher photoelectric conversion efficiency by using the back polishing process, but the conventional back sub-gate slurry is difficult to adapt to the contact of the back polishing process on the slurry. Therefore, it is extremely important to develop sub-gate pastes suitable for N-type cell backside polishing

Method used

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  • Auxiliary grid slurry suitable for back polishing surface of N-type double-sided battery
  • Auxiliary grid slurry suitable for back polishing surface of N-type double-sided battery
  • Auxiliary grid slurry suitable for back polishing surface of N-type double-sided battery

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Experimental program
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Embodiment

[0038] The invention is illustrated by, but not limited to, the following examples.

[0039] Reference group and Examples 1 to 3.

[0040] The sub-gate silver paste on the back of the N-type battery is made of the following raw materials.

[0041] Silver powder: spherical, silver powder Ag01: D(50) is 1.8-2.0um, silver powder Ag02: D(50) is 2.9-3.1um.

[0042] Glass powder: The transition temperature Tg of glass powder is 245-285°C.

[0043] Organic carrier: The proportion of total resin in the organic carrier in the examples is controlled at 6%, 9%, and 12%.

[0044] Table 1

[0045] Reference Example Carrier C Example carrier A Example Vector A2 Example Vector A3 resin content 15％ 6.0％ 9％ 12％ silicone oil 3.0％ 3.0％ 3.0％ 3.0％ other solvents etc. 82％ 91.0％ 88.0％ 85.0％

[0046] Wherein the production method of carrier A2A3 and reference example C is the same as that of carrier A;

[0047] The reference group paste uses the cur...

Embodiment 2

[0055] Embodiment 2 and Embodiment 3 to 4.

[0056] To test the impact of the resin content change in the carrier on the N-type backside paste, embodiment 3 uses a carrier with a resin content of 9% to match the silver powder with a large particle size; embodiment 4 uses a carrier with a resin content of 12% to match the silver powder with a large particle size. The specific formula is shown in Table 3.

[0057] table 3

[0058]

[0059]

[0060] figure 2 for the EL performance case. Table 3 and figure 2 The results show that the higher the resin content in the carrier, the more organic residues in the sintering process, the greater the impact on the flow of the glass in the slurry, the more serious the EL cloud and the worse the electrical properties, so in the case of taking into account the overall viscosity of the slurry The resin content in the carrier should be as low as possible;

[0061] Embodiment 2 and Embodiment 5 to 6.

[0062] Check when using the ca...

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Abstract

The invention provides auxiliary grid slurry suitable for a polished surface on the back of an N-type double-sided battery and a preparation method. The slurry is composed of two parts: one part is an organic carrier part with low resin content, volatilization is more thorough in the slurry sintering process, and glass flowing is more facilitated, so the contact property of the slurry on the polished silicon wafer is improved; the other part part is an inorganic part and is matched with specific silver powder, so the contact performance of the paste is improved.

Description

technical field [0001] The invention relates to a sub-grid slurry suitable for polishing the back surface of an N-type double-sided battery, and specifically relates to a carrier preparation method of the slurry, the back sub-gate silver paste and the technical fields of N-type solar cell electrodes. Background technique [0002] Crystalline silicon solar cells use PN junctions to form directional electron holes under sunlight to achieve photoelectric conversion, and their photoelectric conversion efficiency is an important indicator in the industrialization process. The efficiency is higher, the attenuation is smaller, and the potential is greater, and the industrialization of N-type Topcon double-sided silicon cells has gradually matured. [0003] The N-type double-sided battery is characterized by excellent back passivation effect and high efficiency performance on both the front and back sides. The overall efficiency and power generation of the battery have obvious advan...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B1/16H01B1/22H01L31/0224
CPCH01B1/16H01B1/22H01L31/022425Y02E10/50
Inventor 杜海涛史伟陈小龙乔亮
Owner 上海银浆科技有限公司
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