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Novel-structure film bulk acoustic resonator and preparation method thereof

A thin-film bulk acoustic wave and resonator technology, applied in the direction of impedance network, electrical components, etc., can solve the problems of electrical loss and low electromechanical coupling coefficient, and achieve the effect of avoiding electrical loss, high electromechanical coupling coefficient and improving performance

Pending Publication Date: 2021-06-11
武汉敏声新技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Commonly used piezoelectric materials are often aluminum nitride or scandium-doped aluminum nitride. Pure aluminum nitride has the disadvantage of low electromechanical coupling coefficient, while scandium-doped aluminum nitride has electrical loss due to its certain conductivity.

Method used

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  • Novel-structure film bulk acoustic resonator and preparation method thereof
  • Novel-structure film bulk acoustic resonator and preparation method thereof
  • Novel-structure film bulk acoustic resonator and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] Figure 4 It is the first film bulk acoustic resonator 100 containing stacked piezoelectric materials, including: an upper electrode 101, aluminum nitride 102, scandium-doped aluminum nitride 103, and a lower electrode 104;

[0039] Wherein, aluminum nitride 102 and scandium-doped aluminum nitride 103 together constitute the piezoelectric material of the thin film bulk acoustic resonator 100;

[0040] Among them, the thickness of aluminum nitride 102 is 0.1 micron, the thickness of scandium-doped aluminum nitride is 0.8 micron; the thickness of the upper electrode and the lower electrode is 0.2 micron;

[0041] According to the COMSOL simulation results, the resonance frequency of the resonator with this structure is 2.38GHz, and the antiresonance frequency is 2.515GHz; use Matlab to calculate the quality factor and electromechanical coupling coefficient at the series and parallel resonance frequencies of the resonator, respectively: 1190, 629, 12.5336%;

[0042] It s...

Embodiment 2

[0044] Figure 5 It is the second film bulk acoustic resonator 100 containing stacked piezoelectric materials, including: an upper electrode 101, aluminum nitride 102, scandium-doped aluminum nitride 103, and a lower electrode 104;

[0045] Wherein, aluminum nitride 102 and scandium-doped aluminum nitride 103 together constitute the piezoelectric material of the thin film bulk acoustic resonator 100;

[0046] Among them, the thickness of aluminum nitride 102 is 0.2 microns, the thickness of scandium-doped aluminum nitride is 0.6 microns; the thickness of the upper electrode and the lower electrode is 0.2 microns;

[0047] According to the COMSOL simulation results, the resonance frequency of the resonator with this structure is 2.44GHz, and the antiresonance frequency is 2.564GHz; use Matlab to calculate the quality factor and electromechanical coupling coefficient at the series and parallel resonance frequencies of the resonator, respectively: 1220, 513, 11.3557%;

[0048] ...

Embodiment 3

[0050] Figure 6 It is the third thin film bulk acoustic resonator 100 containing stacked piezoelectric materials, including: an upper electrode 101, aluminum nitride 102, scandium-doped aluminum nitride 103, and a lower electrode 104;

[0051] Wherein, aluminum nitride 102 and scandium-doped aluminum nitride 103 together constitute the piezoelectric material of the thin film bulk acoustic resonator 100;

[0052] Among them, the thickness of aluminum nitride 102 is 0.3 microns, the thickness of scandium-doped aluminum nitride is 0.4 microns; the thickness of the upper electrode and the lower electrode is 0.2 microns;

[0053] According to the COMSOL simulation results, the resonance frequency of the resonator with this structure is 2.506GHz, and the antiresonance frequency is 2.617GHz; use Matlab to calculate the quality factor and electromechanical coupling coefficient at the series and parallel resonance frequencies of the resonator, respectively: 835, 291, 10.0216%;

[00...

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Abstract

The invention discloses a novel-structure film bulk acoustic resonator and a preparation method thereof, wherein the novel-structure film bulk acoustic resonator is composed of an upper electrode, a first piezoelectric layer, a second piezoelectric layer, a third piezoelectric layer and a lower electrode. With the arrival of the 5G era, the development of the resonator moves more and more toward miniaturization, integration and high frequency, notrequirements on resonator performance in the market are higher and higher, a surface acoustic wave resonator (SAW) can meet high-frequency application, but a film bulk acoustic resonator (FBAR) has the defect of low electromechanical coupling coefficient. According to the invention, by changing a single piezoelectric layer of a traditional film bulk acoustic resonator, the electrical loss of the piezoelectric layer can be effectively reduced; the purpose of adjusting the electromechanical coupling coefficient of the film bulk acoustic resonator is achieved by adjusting the thickness of each piezoelectric layer, and the invention further discloses a preparation method of the film bulk acoustic resonator of the new structure.

Description

technical field [0001] The invention relates to the field of bulk acoustic wave resonators, in particular to a thin-film bulk acoustic wave resonator with a new structure and a preparation method thereof. Background technique [0002] With the popularization of 5G technology, the existing filter technology is becoming more and more insufficient for the development of radio communication. Because of its low operating frequency and power limitation, the surface acoustic wave filter (SAW) is more and more difficult to use in actual use. It is becoming more and more difficult to meet the requirements. Bulk acoustic wave filters can work at higher operating frequencies, have better isolation characteristics and Q values, lower insertion loss, and steeper curves. [0003] The traditional thin film bulk acoustic resonator structure includes a top electrode, a piezoelectric material and a bottom electrode. Due to its unique piezoelectric effect, the piezoelectric material will exci...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/17H03H3/02H03H9/02
CPCH03H9/173H03H9/02015H03H3/02H03H2003/023
Inventor 孙成亮龙开祥国世上刘炎邹杨高超曲远航谷曦宇温志伟王瑶
Owner 武汉敏声新技术有限公司
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