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Method for manufacturing molybdenum-containing thin film and molybdenum-containing thin film manufactured thereby

A manufacturing method and film technology, applied in the field of molybdenum-containing films, to achieve the effect of high-end poor coverage and excellent purity

Active Publication Date: 2021-06-15
DNF
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, the conventional molybdenum-containing thin film deposition process uses oxygen as a reactive gas, so there is a problem that a reduction process must be performed

Method used

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  • Method for manufacturing molybdenum-containing thin film and molybdenum-containing thin film manufactured thereby
  • Method for manufacturing molybdenum-containing thin film and molybdenum-containing thin film manufactured thereby
  • Method for manufacturing molybdenum-containing thin film and molybdenum-containing thin film manufactured thereby

Examples

Experimental program
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Effect test

Embodiment 1

[0097] [Example 1] Manufacture of molybdenum-containing thin film

[0098] Will (Compound 1) was used as a molybdenum-containing precursor, diiodomethane (CH 2 I 2 ) is used as a reactive gas, and a molybdenum-containing thin film is formed by atomic layer deposition (Atomic layer deposition).

[0099] First, the silicon oxide film substrate was kept at 250°C, and compound 1 was filled into a stainless steel bubbling vessel and kept at 70°C. Argon gas (50 sccm) was used as a delivery gas to deliver Compound 1 vaporized in the stainless steel bubbling vessel to the silicon oxide film substrate during 1 second (0.0003 g) so that it was adsorbed on the silicon oxide film substrate. Subsequently, unreacted compound 1 was removed with argon (4000 seem) during 10 seconds. After that, diiodomethane (CH 2 I 2 ) to form molybdenum-containing films. Finally, reaction by-products and residual reaction gases were removed using argon (4000 seem) during 30 seconds. For 1 mole of th...

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Abstract

The present invention provides a method for manufacturing a molybdenum-containing thin film and a molybdenum-containing thin film manufactured thereby. By using a molybdenum (0)-based hydrocarbon compound and a predetermined reaction gas, the method for manufacturing a molybdenum-containing thin film according to the present invention enables easy manufacturing of a highly pure thin film in a simple process.

Description

technical field [0001] The present invention relates to the manufacturing method of molybdenum-containing thin film and the molybdenum-containing thin film manufactured by this manufacturing method, and relate to molybdenum (0) base hydrocarbon as thin film deposition precursor and iodine, alkyl as specific reaction gas in more detail A method of reacting alkyl iodide, silyl iodide or a mixture thereof to produce a molybdenum-containing film and a molybdenum-containing film produced by the method. Background technique [0002] Thin films containing molybdenum can be used in organic light-emitting diodes, liquid crystal displays, plasma display panels, field emission displays, thin-film solar cells, low-resistance ohmic, other electronic devices, and semiconductor devices, and are mainly used as barrier films, etc. components of electronic parts. [0003] Molybdenum, molybdenum oxide, and molybdenum nitride are widely used in various fields because of low resistance, large w...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/32C23C16/18C23C16/455C23C16/02C23C16/56
CPCC23C16/18C07F17/00C07F11/00C23C16/16Y02P70/50C23C16/45553C23C16/56
Inventor 金铭云李相益徐章祐全相勇林幸墩
Owner DNF
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