Polarity surface distinguishing method for aluminum nitride single crystal polished wafer (0001) surface

Abstract

The invention relates to a polar surface distinguishing method for an aluminum nitride single crystal polished wafer (0001) surface, which comprises the following steps of: adding 5-10 parts of ethylamine and 15-30 parts of 6508 isopropanolamide into 100 parts of deionized water, and uniformly mixing the solution; placing a beaker containing the mixed solution on a heating table and heating the beaker to 60-70 DEG C, then placing a (0001)-face aluminum nitride double-face polished wafer with the cleaned surface into the beaker by clamping the wafer with plastic tweezers, wherein the two polished faces of the wafer are kept to make full contact with the mixed solution, and performing standing treatment for 5-10 min and taking out the aluminum nitride polished wafer; and washing the wafer with deionized water, and observing the front and back surfaces of the wafer, the smooth surface being the Al surface, and the rough surface being the N surface. The method has the beneficial effects that chemical reagent corrosion is adopted, the polar surfaces are distinguished according to different changes of the Al surface and the N surface under the action of the reagent, so that the method is excellent.

Description

technical field [0001] The invention relates to a method for distinguishing polar planes of aluminum nitride single crystal polished (0001) planes, which belongs to the analysis field of semiconductor materials. Background technique [0002] Aluminum nitride (AlN) single crystal has a large band gap, high breakdown field strength, high thermal conductivity, good thermal stability, and is completely transparent in the DUV band of visible light. It has broad applications in the fields of microelectronics and optoelectronics. Application prospect. AlGaN / GaN high-mobility transistor (HEMT) materials and devices exhibit excellent performance in high-frequency applications, especially for next-generation microwave power devices. [0003] The aluminum nitride single crystal ingot grown along the [0001] direction needs to go through directional cutting, grinding, polishing and other processing processes to obtain a single crystal polished sheet with a flattened surface (0001) surfa...

AI Technical Summary

Problems solved by technology

In the current research, there is no method that only uses solution to etch and distinguishes the polar surface of AlN wafer (0001) by naked eyes. Therefore, a method that is simple, time-saving, less dangerous and less damaging to the polished surface of the wafer is urgently needed , differentiate the polarity of the AlN polished sheet (0001), and determine the Al surface and the N surface

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