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Additive for removing winding plating of polycrystalline silicon or amorphous silicon of silicon solar cell, winding plating removing method and method for improving yield of N-type cell

A technology of silicon solar cells and additives, which is applied in the field of solar cells, can solve the problems of insufficient cleaning of N-type high-efficiency batteries, poor cleaning effect of chain equipment, etc., and achieve process and equipment improvement, high safety, and process good stability effect

Active Publication Date: 2021-06-22
CSI CELLS CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method improves the phenomenon of front winding plating of tubular crystalline silicon solar PERC cells, improves the appearance of the cell, and improves the photoelectric conversion efficiency. However, this method of removing winding plating can only be limited to chain equipment
Moreover, the cleaning effect of chain equipment is not good enough to meet the cleaning requirements of N-type high-efficiency batteries

Method used

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  • Additive for removing winding plating of polycrystalline silicon or amorphous silicon of silicon solar cell, winding plating removing method and method for improving yield of N-type cell
  • Additive for removing winding plating of polycrystalline silicon or amorphous silicon of silicon solar cell, winding plating removing method and method for improving yield of N-type cell
  • Additive for removing winding plating of polycrystalline silicon or amorphous silicon of silicon solar cell, winding plating removing method and method for improving yield of N-type cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0059] This embodiment provides an additive and a method for improving the yield of an N-type battery by using the additive. The composition of described additive is:

[0060]

[0061] the rest is water,

[0062] Wherein, the functional additive is a mixture of acetone and aluminum isopropoxide in a mass ratio of 1:1.

[0063] The methods include:

[0064] 1 Pre-cleaning the silicon wafer coated with polysilicon on the front side in an aqueous solution containing additives, the additive content is 2wt%, and the pre-cleaning temperature is 25°C;

[0065] 2. Remove the polysilicon on the front side by adding KOH and additives to the above pre-cleaned silicon wafers. The reaction temperature is 70° C., the KOH content is 4.5 wt%, and the additive content is 2 wt%.

[0066] Observe the appearance of the obtained battery sheet. If there is color difference in appearance, it is a substandard product, and if there is no color difference in appearance, it is a qualified product....

Embodiment 2

[0069] This embodiment provides an additive and a method for improving the yield of an N-type battery by using the additive. The composition of described additive is:

[0070]

[0071] the rest is water,

[0072] Wherein, the functional additive is a mixture of aluminum isopropoxide, tert-butanol peroxide and triphenyl phosphite in a mass ratio of 1:2:1.

[0073] The methods include:

[0074] 1. The silicon wafer coated with amorphous silicon on the front side is pre-washed in an aqueous solution containing additives, the additive content is 2wt%, and the pre-cleaning temperature is 25°C;

[0075] 2. The above pre-cleaned silicon wafer is passed through an aqueous solution added with KOH and additives to remove the amorphous silicon on the front side. The reaction temperature is 60°C, the KOH content is 4wt%, and the additive content is 3wt%.

[0076] In this embodiment, the yield rate of the battery after dewinding plating is 93%.

Embodiment 3

[0078] This embodiment provides an additive and a method for improving the yield of an N-type battery by using the additive. The composition of described additive is:

[0079]

[0080] the rest is water,

[0081] Wherein, the functional additive is a mixture of aluminum isopropoxide, tert-butanol peroxide and three-membered cyclic ether in a mass ratio of 1:3:4.

[0082] The methods include:

[0083] 1. Pre-clean the silicon wafer coated with polysilicon on the front side in an aqueous solution containing additives, the additive content is 1 wt%, and the pre-cleaning temperature is 40°C;

[0084] 2. Remove the polysilicon on the front side from the pre-cleaned silicon wafer in an aqueous solution with NaOH and additives. The reaction temperature is 50° C., the NaOH content is 7.5 wt %, and the additive content is 2.2 wt %.

[0085] In this embodiment, the yield rate of the battery after dewinding plating is 92%.

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Abstract

The invention discloses an additive for removing winding plating of polycrystalline silicon or amorphous silicon of a silicon solar cell, a winding plating removing method and a method for improving the yield of an N-type cell. The additive comprises the following main components: 3wt%-8wt% of a defoaming agent, 5wt%-13wt% of a surfactant, 2wt%-7wt% of a dispersing agent, 1wt%-5wt% of a slow release agent, 5wt%-14wt% of a functional auxiliary agent and 1wt%-4wt% of potassium sorbate. The dewinding plating method comprises the following step: carrying out dewinding plating reaction on the silicon solar cell subjected to dewinding plating of polycrystalline silicon or amorphous silicon by adopting a dewinding plating reagent containing alkali and the additive and utilizing a wet chemical method. The additive provided by the invention is suitable for the process of removing the winding plating of the polycrystalline silicon or the amorphous silicon of the silicon solar cell, and can play a role in protecting the silicon oxide in the process of removing the winding plating of the polycrystalline silicon or the amorphous silicon by the alkali liquor, so that the front surface and / or the back surface of the silicon solar cell are / is protected from being damaged.

Description

technical field [0001] The invention relates to the technical field of solar cells, and relates to an additive for dewinding and plating polycrystalline silicon or amorphous silicon of silicon solar cells, a method for dewinding and plating, and a method for improving the yield of an N-type battery. Background technique [0002] With the development and application of solar photovoltaic power generation, research on the conversion efficiency and stability of photovoltaic cell materials is becoming more and more mature. The research focus on silicon solar cells is to improve cell efficiency and reduce cell manufacturing costs. For example, N-type passivated contact cells use doped polysilicon or amorphous silicon on the back side to achieve back passivation, reduce back recombination, and improve cell efficiency. At present, tube-type equipment (such as LPCVD equipment) is mostly used to complete the deposition of polysilicon or amorphous silicon on the back side. However, w...

Claims

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Application Information

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IPC IPC(8): H01L21/306H01L31/18C09G1/18
CPCH01L21/30604H01L31/18C09G1/18Y02P70/50
Inventor 张临安邓伟伟
Owner CSI CELLS CO LTD
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