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Preparation method of SiGe-GeSn-SiGe heterostructure high-injection-ratio PiN diode array and device of SiGe-GeSn-SiGe heterostructure high-injection-ratio PiN diode array

A diode array and heterostructure technology, which is applied in the manufacture of electric solid-state devices, semiconductor devices, semiconductor/solid-state devices, etc., can solve the problems of difficult to change design size and heavy weight, and achieve improved junction depth, suppressed leakage, and improved strike The effect of breakdown voltage

Pending Publication Date: 2021-06-22
ENG UNIV OF THE CHINESE PEOPLES ARMED POLICE FORCE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In the traditional metal antenna system, metal is used as the main radiation unit of the antenna, which has the disadvantages of heavy weight and difficult to change the design size.

Method used

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  • Preparation method of SiGe-GeSn-SiGe heterostructure high-injection-ratio PiN diode array and device of SiGe-GeSn-SiGe heterostructure high-injection-ratio PiN diode array
  • Preparation method of SiGe-GeSn-SiGe heterostructure high-injection-ratio PiN diode array and device of SiGe-GeSn-SiGe heterostructure high-injection-ratio PiN diode array
  • Preparation method of SiGe-GeSn-SiGe heterostructure high-injection-ratio PiN diode array and device of SiGe-GeSn-SiGe heterostructure high-injection-ratio PiN diode array

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Effect test

Embodiment 1

[0077] See figure 1 , figure 1 It is a structural schematic diagram of a silicon-based reconfigurable symmetric dipole antenna according to an embodiment of the present invention. The silicon-based reconfigurable symmetrical dipole antenna includes: a semiconductor substrate 1, a first antenna arm 2, a second antenna arm 3, a third antenna arm 4, a fourth antenna arm 5, and a first DC bias line 6. The second DC bias line 7, the third DC bias line 8, the fourth DC bias line 9, the fifth DC bias line 10, the sixth DC bias line 11, the seventh DC bias line 12, An eighth DC bias line 13, a coaxial feeder line 14; the antenna arm is composed of a plurality of high injection ratio PiN diode array units with a SiGe-GeSn-SiGe heterostructure.

[0078] The silicon-based reconfigurable symmetric dipole antenna includes a first antenna arm, a second antenna arm, a third antenna arm and a fourth antenna arm, and the antenna arm includes a plurality of SiGe-GeSn-SiGe heterostructures Th...

Embodiment 2

[0121] See Figure 3a-Figure 3u , Figure 3a-Figure 3u It is a schematic diagram of a method for preparing a high injection ratio PiN diode array with a SiGe-GeSn-SiGe heterostructure according to an embodiment of the present invention. On the basis of the first embodiment above, the length of the intrinsic region is 120 microns (intrinsic A high injection ratio PiN diode array with a SiGe-GeSn-SiGe heterostructure with a region length between 50 microns and 150 microns) is described in detail as an example, and the specific steps are as follows:

[0122] S10, selecting a GeOI substrate.

[0123] See Figure 3a , the crystal orientation of the GeOI substrate 101 may be (100) or (110) or (111), without any limitation here. In addition, the doping type of the GeOI substrate 101 can be n-type or p-type, and the doping concentration is, for example, 0.5×10 14 ~0.5×10 15 cm -3 , the thickness of the top layer Ge is, for example, 30-120 μm.

[0124] S20, doping in the GeOI su...

Embodiment 3

[0167] Please refer to Figure 4 , Figure 4 It is a schematic diagram of a device structure of a SiGe-GeSn-SiGe heterostructure high injection ratio PiN diode according to an embodiment of the present invention. The high injection ratio heterogeneous PiN diode adopts the above as figure 2 The preparation method shown is made, specifically, the high injection ratio PiN diode with SiGe-GeSn-SiGe heterostructure is prepared and formed on the GeOI substrate 301, and the P region 303, N region 304 and the lateral direction of the diode are located on the The intrinsic region between the P region 303 and the N region 304 is located in the top GeSn layer 302 of the substrate. Wherein, the PiN diode adopts deep trench isolation technology, that is, a deep trench isolation region 307 is provided outside the P region 303 and the N region 304, and the depth of the isolation trench 307 is greater than or equal to the thickness of the top GeSn layer 302. In addition, the P region 303 ...

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Abstract

The invention relates to a preparation method of a SiGe-GeSn-SiGe heterostructure high injection ratio PiN diode array and a device thereof, and the method comprises the steps: selecting a GeOI substrate of a certain crystal orientation, and carrying out the doping in the GeOI substrate to form a top GeSn region; arranging a deep groove isolation region in the GeSn region on the top layer of the substrate; etching the GeSn region to form a P-type groove and an N-type groove; forming a P-type active region and an N-type active region in the P-type groove and the N-type groove by adopting ion implantation; forming a GeSn alloy lead on the substrate and connecting the diodes in series; according to the invention, the high-injection-ratio PiN diode array with the SiGe-GeSn-SiGe heterostructure, which is suitable for forming a silicon-based reconfigurable symmetric dipole antenna, can be prepared and provided by technologies of dynamically controlling the content of the Sn component in the top layer Ge, introducing the GeSn alloy lead and the like.

Description

technical field [0001] The invention relates to the technical field of semiconductor materials and device manufacturing, in particular to a method for preparing a SiGe-GeSn-SiGe heterostructure high injection ratio PiN diode array and a device thereof. Background technique [0002] Modern communication systems are constantly developing towards low power consumption, broadband, and high integration, which requires the development of flexible reconfiguration technology and system miniaturization technology for modern antenna systems. In the traditional metal antenna system, metal is the main radiation element of the antenna, which has the disadvantages of heavy weight and difficult to change the design size. Plasma reconfigurable antennas have many advantages such as flexible switching of working frequency bands, wide range of radiation directions, small size, and compatibility with microelectronics processes. It is an effective way to improve the performance of radar and comm...

Claims

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Application Information

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IPC IPC(8): H01L29/868H01L29/06H01L21/329H01L23/66
CPCH01L29/868H01L29/0603H01L29/0684H01L29/6606H01L23/66H01L2223/6677
Inventor 苏汉周阳
Owner ENG UNIV OF THE CHINESE PEOPLES ARMED POLICE FORCE
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