Resistance paste for high-performance thick-film resistor

A thick film resistor and resistance paste technology, applied in thick film resistors, resistors, non-adjustable metal resistors, etc., can solve the problems of large changes in electrostatic discharge, wide TCR range, and poor resistance accuracy. Good electrostatic discharge, good sintering stability, excellent electrostatic discharge effect

Active Publication Date: 2021-06-29
西安宏星电子浆料科技股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The resistance paste prepared by the traditional process has poor resistance accuracy, wide TCR range, large electrostatic discha

Method used

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  • Resistance paste for high-performance thick-film resistor
  • Resistance paste for high-performance thick-film resistor
  • Resistance paste for high-performance thick-film resistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1～16

[0021] Preparation of conductive powder: According to the mass percentage listed in Table 1 and the conditions of isostatic pressing and heat treatment, the specific surface area is 75 ~ 95m 2 / g of ruthenium dioxide and porous silicon carbide with a particle size of 1-2 μm are mixed and granulated, subjected to isostatic pressing and vacuum heat treatment, crushed and ball-milled to 1-2 μm, and the obtained powder is a conductive powder.

[0022] Table 1 Proportion and preparation process of conductive powder

[0023]

[0024] Preparation of glass powder: according to CaO 44%, Al 2 o 3 9%, B 2 o 3 25%, SiO 2 22%, and according to CaO 44%, B 2 o 3 25%, SiO 2 22%, ZnO 5%, K 2 O 4% mass percentage for batching, after mixing various oxides evenly, put the obtained mixture in a melting furnace at 1400°C for melting, holding time for 1.5h, the obtained glass solution is water-quenched to obtain glass, and the glass is broken Form glass slag, and use a ball mill to gri...

Embodiment 17

[0048] Preparation of conductive powder: the specific surface area is 75 ~ 95m 2 / g of ruthenium dioxide and porous silicon carbide with a particle size of 1-2 μm are mixed according to the mass percentage of 50%:50%, then granulated, isostatically pressed at 125MPa for 5h, vacuum heat-treated at 450°C for 1.5h, and then crushed and ball-milled to 1 ~2μm powder, the resulting powder is the conductive powder.

[0049] Preparation of glass powder: according to CaO 44%, Al 2 o 3 9%, B 2 o 3 25%, SiO 2 22%, and according to CaO 44%, B 2 o 3 25%, SiO 2 22%, ZnO 5%, K 2 O 4% mass percentage for batching, after mixing various oxides evenly, put the obtained mixture in a melting furnace at 1400°C for melting, holding time for 1.5h, the obtained glass solution is water-quenched to obtain glass, and the glass is broken Form glass slag, and use a ball mill to grind the glass slag to a particle size of 1.0-1.3 μm, and dry it to obtain the corresponding Ca-Al-B-Si system (referr...

Embodiment 18

[0054] Preparation of conductive powder: the specific surface area is 75 ~ 95m 2 / g of ruthenium dioxide and porous silicon carbide with a particle size of 1-2 μm are mixed according to the mass percentage of 50%:50%, then granulated, isostatically pressed at 125MPa for 5h, vacuum heat-treated at 450°C for 1.5h, and then crushed and ball-milled to 1 ~2μm powder, the resulting powder is the conductive powder.

[0055] Preparation of glass powder: according to CaO 44%, Al 2 o 3 9%, B 2 o 3 25%, SiO 2 22%, and according to CaO 44%, B 2 o 3 25%, SiO 2 22%, ZnO 5%, K 2 O 4% mass percentage for batching, after mixing various oxides evenly, put the obtained mixture in a melting furnace at 1400°C for melting, holding time for 1.5h, the obtained glass solution is water-quenched to obtain glass, and the glass is broken Form glass slag, and use a ball mill to grind the glass slag to a particle size of 1.0-1.3 μm, and dry it to obtain the corresponding Ca-Al-B-Si system (referr...

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Abstract

The invention discloses resistance paste for a high-performance thick-film resistor, the resistance paste comprises the following components in percentage by mass: 20%-45% of conductive powder, 25%-40% of calcium borosilicate glass powder, 1%-3% of nano yttrium aluminum garnet powder, 0.5%-10% of an inorganic additive and 25%-35% of an organic carrier, wherein the conductive powder is a composite material generated by ruthenium dioxide and porous silicon carbide. The preparation method comprises the following steps: mixing ruthenium dioxide with the specific surface area of 75-95m < 2 >/g and porous silicon carbide with the particle size of 1-2[mu]m, granulating, carrying out isostatic pressing for 4-6h under the pressure of 100-150MPa, carrying out vacuum heat treatment for 1-2h at the temperature of 400-500 DEG C, crushing, and carrying out ball milling to obtain powder with the particle size of 1-2[mu]m. The resistance paste has the advantages of being free of lead, environmentally friendly, high in resistance precision, high in power resistance, good in electrostatic discharge, good in constant-temperature placement stability and the like.

Description

technical field [0001] The invention belongs to the technical field of resistance paste, and in particular relates to resistance paste for high-performance thick-film resistors. Background technique [0002] High-performance thick-film circuits and resistors are mainly used in aviation, aerospace, high-power, high-precision, high-tech cutting-edge technology products and other fields that have high reliability requirements for thick-film circuits. At present, there is a global demand for high-performance thick-film circuit products. Therefore, the electronic paste required for the preparation of high-performance thick film circuits, especially the resistance paste products, has higher requirements. [0003] High-performance thick-film circuit products require resistor paste with high resistance precision, good stability, and strong power resistance. In applications, they will withstand conditions such as high temperature, high humidity, extreme cold, vibration, and high powe...

Claims

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Application Information

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IPC IPC(8): H01B1/18H01B1/24H01B1/14H01B1/20H01C7/00
CPCH01B1/14H01B1/18H01B1/20H01B1/24H01C7/003
Inventor 赵莹鹿宁赵科良殷美党丽萍王妮张建益王大林孙社稷
Owner 西安宏星电子浆料科技股份有限公司
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