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Film layer and forming method thereof

A technology of film layer and diamond-like film, which is applied in the field of film layer and its formation, can solve the problems of high internal stress of diamond-like film layer and low hardness of diamond-like film layer, and achieve the effect of improving hardness and performance

Active Publication Date: 2021-07-02
CHANGXIN MEMORY TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The embodiment of the present invention provides a film layer and its forming method, which is beneficial to solve the problems of low hardness of the diamond-like film layer and excessive internal stress of the diamond-like film layer

Method used

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  • Film layer and forming method thereof

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Embodiment Construction

[0028] It can be seen from the background art that the performance of the film layer in the prior art is not good.

[0029] Because the diamond-like carbon film contains a large amount of hydrogen elements, the arrangement of atoms in the diamond-like carbon film is irregular, and the irregular atomic arrangement leads to the hardness of the diamond-like carbon film is not high; at the same time, because the diamond-like carbon film contains a large amount of Sp3 hybridization bonds, so the density of carbon atoms in the local area of ​​the diamond-like film is relatively high, and the average coordination number of most atoms in the diamond-like film is relatively high, resulting in a high internal stress of the diamond-like film; When the diamond-like carbon film layer is used in the semiconductor patterning process, the diamond-like carbon film layer with relatively high internal stress has a bad influence on the transfer effect of the pattern, and easily causes warpage of t...

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Abstract

The embodiment of the invention provides a film layer and a forming method thereof, and the forming method comprises the steps: providing a substrate; forming a diamond-like carbon film layer on the substrate, wherein a hydrocarbon chemical bond is arranged in the diamond-like carbon film layer; and carrying out photocatalytic treatment on the diamond-like carbon film layer, so that at least part of the hydrocarbon chemical bonds are broken, and the content of the hydrogen element in the diamond-like carbon film layer is reduced. According to the forming method provided by the embodiment of the invention, the hardness of the diamond-like carbon film layer can be improved, and the internal stress of the diamond-like carbon film layer can be reduced.

Description

technical field [0001] Embodiments of the present invention relate to the field of semiconductors, and in particular to a film layer and a method for forming the same. Background technique [0002] Diamond Like Carbon (DLC) is a metastable material formed in the form of Sp3 hybrid bonds and Sp2 hybrid bonds. It has both the excellent characteristics of diamond and graphite, and has high hardness, High resistivity, good optical properties and excellent tribological properties, so it is widely used in the semiconductor industry. Due to the relatively high hardness of the diamond-like film layer, in the semiconductor patterning process, the use of the diamond-like film layer can effectively reduce the thickness of the photoresist, and avoid the collapse caused by the photoresist being too high. [0003] However, the diamond-like carbon film layer has a high internal stress, which has a serious impact on the transfer effect of the pattern, and is easy to cause warping of the wa...

Claims

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Application Information

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IPC IPC(8): H01L21/02
CPCH01L21/02527H01L21/0262H01L21/02664C23C16/26C23C16/56C23C16/276C23C16/277C23C16/513
Inventor 邓新莲
Owner CHANGXIN MEMORY TECH INC
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