Etching method and manufacturing method of CMOS image sensor

Abstract

The invention provides an etching method and a manufacturing method of a CMOS image sensor, and the etching method comprises the steps: providing a substrate, and forming a to-be-etched film layer and a patterned photoresist layer located on the to-be-etched film layer on the substrate; executing an ion implantation process; placing the substrate in a process cavity of a dual-frequency capacitive coupling plasma etching machine, introducing inert gas, performing ionization pretreatment under the first cavity pressure, and the power of a low-frequency power source for ionization pretreatment being zero; and introducing etching gas, and performing etching under the second cavity pressure. Plasma is generated through ionization pretreatment, and static electricity on the surface of a photoresist layer is neutralized by the plasma, so that the static electricity on the surface of the photoresist layer is eliminated, and the problem that a substrate is damaged by arc discharge during dry etching is avoided; the plasma generated through ionization pretreatment can rapidly excite further ionization of the etching gas when dry etching is started, the generation rate of the plasma is increased, and therefore the efficiency of dry etching is improved.

Description

technical field [0001] The invention relates to the technical field of integrated circuit manufacturing, in particular to an etching method and a manufacturing method of a CMOS image sensor. Background technique [0002] In the integrated circuit manufacturing process, with the reduction of process nodes, dry etching has become more and more widely used due to its advantages in etch rate, radiation damage, selectivity, particle generation, post-etch corrosion, and cost advantages. Dual-frequency capacitively coupled plasma (DF-CCP, dual-frequency capacitively coupled plasma) is used to etch high aspect ratio trenches. [0003] However, if the substrate has accumulated static electricity before it is placed in the process chamber of the etching machine, for example, the substrate is implanted with ions before being placed in the process chamber of the etching machine, and then undergoes dry etching, and arc breakdown is very easy to occur Phenomenon. The reason is that stat...

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Problems solved by technology

[0004] The object of the present invention is to provide an etching method and a manufacturing method of a CMOS image sensor, to solve the problem of arc discharge on the substrate surface during the above-mentioned dry etching

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