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High-strength and high-heat-conductivity silicon nitride ceramic substrate and preparation method and application thereof

A technology of silicon nitride ceramics and high thermal conductivity, which is applied in semiconductor devices, semiconductor/solid-state device components, electrical components, etc., can solve the problems of processing difficulty and high cost, anisotropy of fired products, and single shape. Achieve the effect of small anisotropy of strength, increase strength and reduce anisotropy

Active Publication Date: 2021-07-09
GUANGDONG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Strong magnetic domain assisted molding can obtain silicon nitride products with high grain orientation, but because it needs to be supplemented with a strong magnetic domain of about 10T, the equipment price and use cost are very high, and it is difficult to popularize and apply on a large scale; The method can also obtain samples with higher grain orientation, but only one sample can be fired at a time and the shape is single
In addition, the samples prepared by hot-press flow sintering and strong magnetic domain assisted forming methods need to be cut into sheets, which is difficult and costly to process, and is not suitable for industrial application.
[0005] Based on the above discussion, it can be seen that the preparation of high-performance silicon nitride ceramic substrates currently faces two problems: one is that it is difficult to take into account the high strength and high thermal conductivity of silicon nitride at the same time; Anisotropy

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  • High-strength and high-heat-conductivity silicon nitride ceramic substrate and preparation method and application thereof
  • High-strength and high-heat-conductivity silicon nitride ceramic substrate and preparation method and application thereof
  • High-strength and high-heat-conductivity silicon nitride ceramic substrate and preparation method and application thereof

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Embodiment Construction

[0035] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention, and similar component numbers in the drawings represent similar components. Apparently, the embodiments described below are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0036] It should be understood that when used in this specification and the appended claims, the terms "comprising" and "comprises" indicate the presence of described features, integers, steps, operations, elements and / or components, but do not exclude one or Presence or addition of multiple other features, integers, steps, operations, elements, components and / or col...

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Abstract

The embodiment of the invention discloses a high-strength and high-heat-conductivity silicon nitride ceramic substrate and a preparation method and application thereof, and relates to the technical field of ceramic substrate preparation. The preparation method comprises the steps: carrying out ball milling treatment on a dispersing agent and a solvent to obtain a dispersing agent solution; sequentially adding a sintering aid and silicon nitride ceramic powder into the dispersing agent solution under the condition of keeping the ball-milling state, and continuing ball-milling to obtain a stable suspension; adding a plasticizer into the stable suspension, adding an adhesive into the stable suspension for multiple times while keeping the ball milling state, and continuing ball milling to obtain tape casting slurry; carrying out defoaming treatment on the casting slurry; making the tape casting slurry into green sheets through a tape casting process; stacking the green sheets to obtain an initial green body; and preparing the initial blank into the ceramic through a cold isostatic pressing process, a rubber discharging process and a sintering process in sequence. According to the method provided by the embodiment of the invention, the silicon nitride ceramic substrate with high strength and high thermal conductivity can be prepared, and the anisotropy of the strength of the silicon nitride ceramic substrate is relatively small.

Description

technical field [0001] The invention relates to the technical field of ceramic substrate preparation, in particular to a silicon nitride ceramic substrate with high strength and high thermal conductivity, a preparation method and application thereof. Background technique [0002] As an important material basis for human social life and production, energy has become an indispensable and important support in the process of social development. Currently widely used energy is mainly fossil energy. Because fossil energy will produce polluting gas during the use process, it will cause harm to the environment; and, as a non-renewable resource, fossil energy cannot permanently provide energy for human beings. Therefore, it is urgent to find a new alternative energy source. Electric energy has attracted people's attention because of its clean, efficient, and renewable characteristics, and has been widely used in daily life and industrial production. Insulated gate bipolar transist...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/596C04B35/81C04B35/622H01L23/15
CPCC04B35/587C04B35/622H01L23/15C04B2235/3225C04B2235/3206C04B2235/3224C04B2235/3852C04B2235/3873C04B2235/3878C04B2235/3882C04B2235/5276C04B2235/5445C04B2235/5436C04B2235/96C04B2235/9607
Inventor 伍尚华吕东霖杨平李建斌
Owner GUANGDONG UNIV OF TECH