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Quantum dot, preparation method thereof and quantum dot light-emitting diode

A quantum dot luminescence and quantum dot technology, which is applied in the direction of luminescent materials, chemical instruments and methods, semiconductor/solid-state device manufacturing, etc., can solve the problems of reducing the working life of the device and cannot completely avoid the intrusion of water and oxygen, so as to improve performance, Conducive to the transport of charges and the effect of recombination luminescence

Active Publication Date: 2021-07-16
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of the above-mentioned deficiencies in the prior art, the purpose of the present invention is to provide a quantum dot and its preparation method and a quantum dot light-emitting diode, aiming at solving the problem that the intrusion of water and oxygen cannot be completely avoided during the working process of the quantum dot light-emitting diode, resulting in a decrease in the device. The problem of working life

Method used

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  • Quantum dot, preparation method thereof and quantum dot light-emitting diode
  • Quantum dot, preparation method thereof and quantum dot light-emitting diode
  • Quantum dot, preparation method thereof and quantum dot light-emitting diode

Examples

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Embodiment 1

[0101] (1)Cd X Zn 1-X Synthesis of Se / ZnSe / ZnS Blue Light Quantum Dots

[0102]Add 2.5mmol of zinc acetate, 0.1mmol of cadmium oxide, 5mL of oleic acid, and 10mL of octadecene (ODE) into the three-necked flask, purging with argon for 20min at room temperature, and then heating to 210°C at a rate of 20°C / min. Keep warm for 30min and stop heating. After the temperature was lowered to 100°C, vacuum was drawn and argon was introduced. Afterwards, the temperature was raised to 310° C., and 0.25 mL of 2M selenium elemental-tri-n-octyl phosphine (Se-TOP) solution was rapidly injected under the liquid surface of the three-necked bottle to form the first reaction solution with alloy quantum dot nanocrystal nuclei. After 30 minutes of heat preservation, 0.5 mmol selenium element-tri-n-octyl phosphorus solution was added to the first reaction solution to form a second reaction solution having an alloy quantum dot nanocrystal nucleus with an outer layer of ZnSe. After reacting for 20...

Embodiment 2

[0111] Other steps are the same as in Example 1, except that the quantum dots spin-coated on the light-emitting layer use octylthiol as the quantum dots of the single surface modification ligand.

Embodiment 3

[0113] Other steps are the same as in Example 1, except that the quantum dots spin-coated on the light-emitting layer use octadecanethiol as the quantum dots of the single surface modification ligand.

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Abstract

The invention discloses a quantum dot and a preparation method thereof and a quantum dot light-emitting diode. The quantum dot comprises a CdXZn1-XSe quantum dot core, wherein X is gradually reduced from inside to outside along the radial direction of the CdXZn1-XSe quantum dot core, and X is more than 0 and less than 1; a first shell, which is formed on the surface of the CdXZn1-XSe quantum dot core; and a second shell, which is formed on the surface of one side, far away from the CdXZn1-XSe quantum dot core, of the first shell. The invention provides a quantum dot with a gradient alloy structure, a CdXZn1-XSe quantum dot core is an alloy with components changing in a gradient manner, the CdSe component dominates in the inner core, the ZnSe component dominates in the outer core, and the energy level of the CdXZn1-XSe quantum dot core is continuous outwards and is widened due to the fact that the forbidden band width of CdSe is smaller than that of ZnSe, so that the structure is more beneficial to charge transmission and composite light emitting, and therefore, the performance of a blue quantum dot light-emitting diode device is improved.

Description

technical field [0001] The invention relates to the field of quantum dot light-emitting devices, in particular to a quantum dot, a preparation method thereof, and a quantum dot light-emitting diode. Background technique [0002] Quantum dots (QDs), also known as semiconductor nanocrystals, are nanoparticles composed of II-VI or III-V elements, with a diameter of about 1-100 nm. Due to the small size of QDs, it has special small size effect, surface effect, quantum size effect and macroscopic quantum tunneling effect. Quantum dots exhibit unique optical properties, such as high quantum yield, long fluorescence lifetime, large extinction coefficient, strong light tolerance, narrow emission spectrum and wide excitation spectrum range, etc. The preparation and application of quantum dots have aroused widespread research interest, and have broad application prospects in the fields of biomedicine and optoelectronics. [0003] Quantum dot light-emitting diode (QLED) is a new stru...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/02C09K11/88H01L51/50
CPCC09K11/883C09K11/02H10K50/115C09K11/88C09K11/56C09K11/54
Inventor 孙培川杨一行
Owner TCL CORPORATION