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Nano composite material, preparation method thereof, solution composition and light-emitting diode

A nanocomposite material and solution technology, applied in nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., can solve the problem of low electron mobility of nanoparticles

Active Publication Date: 2021-07-16
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The main purpose of the present invention is to provide a preparation method of nanocomposite materials, aiming to solve the problem of low electron mobility of existing metal oxide nanoparticles

Method used

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  • Nano composite material, preparation method thereof, solution composition and light-emitting diode
  • Nano composite material, preparation method thereof, solution composition and light-emitting diode
  • Nano composite material, preparation method thereof, solution composition and light-emitting diode

Examples

Experimental program
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preparation example Construction

[0021] A method for preparing a nanocomposite material, comprising: reacting metal oxide nanoparticles and a trifluoromethyl-containing precursor in a solution under acidic conditions under an inert gas atmosphere to prepare a surface modified with at least one trifluoromethyl group. Methyl metal oxide nanoparticles.

[0022] Specifically, the metal oxide nanoparticles and the trifluoromethyl-containing precursor are reacted in a solution under acidic conditions, so that the precursor is decomposed to form a free trifluoromethyl group, and the free trifluoromethyl group is combined with the trifluoromethyl group. The above-mentioned metal oxide nanoparticles are combined to prepare metal oxide nanoparticles with trifluoromethyl groups on the surface. The metal oxide nanoparticles and the trifluoromethyl-containing precursors are reacted synchronously in the solution under acidic conditions, so that the free trifluoromethyl groups formed by acid hydrolysis can be combined with ...

Embodiment approach

[0024] The metal oxide nanoparticles refer to a type of n-type semiconductor metal oxides with a wide band gap, such as zinc oxide, zirconium oxide, titanium oxide and the like. As an embodiment, the metal oxide nanoparticles are selected from at least one of zinc oxide, zirconium oxide, and titanium oxide. In some embodiments, the particle size of the metal oxide nanoparticles is 3-12nm, and the metal oxide nanoparticles in this particle size range can disperse a uniform colloidal solution in the solution, and have good film-forming performance, which is conducive to the formation of Uniform and flat film layer to improve the light-emitting performance of light-emitting devices.

[0025] The precursor refers to a class of organic matter that can be decomposed by a reaction to form a free trifluoromethyl group. As an embodiment, the precursor is selected from 2-chloro-4-(trifluoromethoxy)aniline, trifluoromethoxy At least one of sodium fluoromethanesulfonate, trifluoromethyld...

Embodiment 1

[0067] This embodiment provides a light-emitting diode, the preparation of which specifically includes the following steps:

[0068] 1. Preparation of nanocomposite material A

[0069]Disperse zinc oxide nanoparticles in 10 mL of butanol, heat to 40 °C under argon atmosphere and stir until dissolved to form a zinc oxide solution with a concentration of 1.0 M; add 0.5 mL of n-octanoic acid to the zinc oxide solution and stir for 10 minutes Then add 0.1mmol of 2-chloro-4-(trifluoromethoxy)aniline and react for 30 minutes; Methyl zinc oxide nanoparticles;

[0070] 2. Preparation of light-emitting diode A

[0071] 1) Dispersing the nanocomposite material A in butanol to obtain the electron transport layer slurry A; depositing the electron transport layer slurry A on the ITO substrate to form the electron transport layer A;

[0072] 2) Depositing a CdSe / ZnS core-shell green quantum dot luminescent layer on the electron transport layer A;

[0073] 3) Print a hole transport layer...

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Abstract

The invention belongs to the technical field of display, and particularly relates to a nano composite material, a preparation method thereof, a solution composition and a light-emitting diode. The preparation method of the nano composite material provided by the invention comprises the following steps of in an inert gas atmosphere, enabling metal oxide nano particles and a precursor containing trifluoromethyl to react in a solution under an acidic condition, and preparing the metal oxide nano particles of which the surfaces are modified with at least one trifluoromethyl. The method is simple and easy and convenient to operate, the surface of the prepared nano composite material is modified with trifluoromethyl, the electron cloud state of the surfaces of metal oxide nano particles is improved, the defects of the surfaces of the metal oxide nano particles are overcome, and when the nano composite material is applied to preparation of an electron transport layer in a light-emitting device, the transmission efficiency of electrons in the transmission film layer can be improved, defect light emitting of the film layer can be reduced, and the contact interface between the film layer and the light-emitting layer can be optimized, so that the light-emitting performance of the light-emitting device is improved.

Description

technical field [0001] The invention belongs to the field of display technology, and in particular relates to a nanocomposite material, a preparation method thereof, a solution composition and a light emitting diode. Background technique [0002] Quantum Dot Light Emitting Diodes (QLED) is an electroluminescent device, which has become a new generation of excellent display technology due to its advantages such as high luminous efficiency, high color purity, narrow luminous spectrum, and adjustable emission wavelength. The luminescence mechanism of quantum dot light-emitting diode (QLED) devices currently being studied is: electrons injected from the cathode are transported through the electron transport layer into the quantum dot light-emitting layer and holes to recombine and radiate light. [0003] In recent years, the use of metal oxide nanoparticles with wide bandgap as the electron transport layer has become a relatively hot research topic. In order to improve the appli...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/54
CPCB82Y30/00B82Y40/00H10K50/115H10K50/16H10K2102/00
Inventor 吴劲衡吴龙佳何斯纳
Owner TCL CORPORATION