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Method for reducing resistance of silicon-based bipolar plate, silicon-based bipolar plate and fuel cell

A bipolar plate, silicon-based technology, applied in the direction of fuel cells, circuits, electrical components, etc., can solve the problems of high process difficulty, problems, corrosion durability of cooling channels, etc., to achieve reduced bulk resistance, excellent durability, and reduced contact The effect of resistance

Active Publication Date: 2021-07-16
浙江海晫新能源科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] It is usually considered to prepare silicon-based bipolar plates by stacking composite connections with conductive materials, and the conductive materials are preferably metal materials, which easily lead to durability problems caused by corrosion of the cooling channels inside the bipolar plates; It is difficult to carry out double-check composite connection of conductive materials

Method used

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  • Method for reducing resistance of silicon-based bipolar plate, silicon-based bipolar plate and fuel cell
  • Method for reducing resistance of silicon-based bipolar plate, silicon-based bipolar plate and fuel cell
  • Method for reducing resistance of silicon-based bipolar plate, silicon-based bipolar plate and fuel cell

Examples

Experimental program
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Effect test

Embodiment 1

[0047] Example 1: The technical solution of the first embodiment is the same as the above implementation, and the difference is that please see figure 1 The silicon-based bipolar plate 10 shown, including a stacked contactless cathode plate 11 and anode plate 12, each other in both the cathode plate 11 and the anode plate 12 each integrally into a doped diffusion layer 13a, 13b, by doping diffusion Layers 13a, 13b are directly stacked in stacked composite electrical contact; where, please refer to Figure 5 As shown, the preparation process of the silicon-based bipolar plate 10 in this embodiment includes the following operation steps:

[0048] S10) ', selecting an N-type doped monocrystalline silicon sheet having two resistance of 2.5mΩ * cm on the surface, respectively, as a silicon-based cathode plate 11 and a silicon-based anode plate 12, and a silicon-based cathode plate 11, respectively. The two sides are provided with an oxidizing agent flow path 11a and a cooling flow path ...

Embodiment 2

[0055] Example 2: The technical solution of the present embodiment is in Example 1, the difference is that figure 1 As shown in the present embodiment, two N-type doped monitocarbon wafers provided with a dioflow in the surface are selected as the silicon-based cathode plate 11 and the silicon-based anode plate 12; detected, the low resistance bipolar The contact resistance value between the silicon-based cathode plate 11 and the silicon base plate 12 in the plate 10 is 4.1mΩ * cm. 2 .

Embodiment 3

[0056] Example 3: The technical solution of this Example 3 is in Example 1, and the difference is that please see figure 2 The silicon-based bipolar plate 20 shown, includes a stacked silicon-based cathode plate 21 and a silicon-based anode plate 22, a doped diffusion layer 23a in a double-sided surface of the silicon-based cathode plate 21; detected, resulting The contact resistance value between the silica cathode plate 21 and the silicon-based anode plate 22 in the resistor bipolar plate 20 is 10.71mΩ * cm 2 .

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Abstract

The invention discloses a method for reducing resistance of a silicon-based bipolar plate, a silicon-based bipolar plate and a fuel cell. The bipolar plate comprises a cathode plate and an anode plate which are stacked in a contact manner, and each polar plate is made of doped silicon wafers; a highly-doped layer is integrally manufactured on at least the stacking contact surface of the cathode plate and / or the anode plate, and the contact resistance between the cathode plate and the anode plate in a single bipolar plate can be reduced through the highly-doped layer. According to the method for reducing the resistance of the silicon-based bipolar plate, the silicon-based bipolar plate and the fuel cell, a conductive metal composite layer does not need to be arranged, so that the overall bulk resistance of the bipolar plate is effectively reduced, and meanwhile in the cooling flow channel with the high working temperature of the bipolar plate, corrosion is not likely to happen, and durability of the bipolar plate is excellent.

Description

Technical field [0001] The present invention belongs to the technical field of fuel cells, and more particularly to a method of reducing silicon-based bipolar plate resistance, the present invention also relates to a bipolar plate and a fuel cell having a method. Background technique [0002] Conventional electrical piles generally use two materials: graphite and metal plates. The graphite plates themselves have better conductivity, and the contact resistance between the two-pole plate cooling waterway surface between the graphite plates, and the contact resistance between the bipolar plate and the carbon fiber gas diffusion layer is also Small, it is possible to easily meet the low resistance of fuel cell stacks. The main disadvantage of the graphite plate is that the mechanical strength is low, the plate thickness, affects the power density of the electric stack; the body resistance of the metal plate is smaller than the graphite plate, and people use the welding method to make...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01M8/0228H01M8/1004C23C16/56C23C16/50C23C16/24
CPCH01M8/0228H01M8/1004C23C16/50C23C16/24C23C16/56Y02P70/50
Inventor 施正荣朱景兵王沛远吴王聪
Owner 浙江海晫新能源科技有限公司