Microwave plasma processing device

A technology of microwave plasma and processing equipment, which is applied in the direction of metal material coating process, coating, gaseous chemical plating, etc., and can solve the problems of uneven edge, heat loss, unfavorable diamond film deposition, etc. that meet the uniformity requirements problem, to achieve the effect of temperature uniformity and uniform edge
CN113151809AActive Publication Date: 2021-07-23SHANGHAI ZHENGSHI TECH CO LTD

Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
SHANGHAI ZHENGSHI TECH CO LTD
Publication Date
2021-07-23

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention discloses a microwave plasma processing device which comprises a microwave source, a microwave circulator, a power regulator, a rectangular waveguide, a tuner, an antenna, a reaction box, a gas mixing system and a vacuum system, the microwave source is connected with the microwave circulator, an emitting end of the microwave circulator is connected with the rectangular waveguide, the power regulator is connected with the emitting end of the microwave circulator and the microwave source, the power regulator is used for regulating the excitation power of the microwave source according to microwave emission power, the tuner is arranged on the side wall of the rectangular waveguide, the reaction box is mounted on the side surface of the tail end of the rectangular waveguide, the antenna is inserted into the rectangular waveguide and the top end of the reaction box, the gas mixing system injects working medium gas into the reaction box, the vacuum system vacuumizes the interior of the reaction box and keeps the interior of the reaction box in a vacuum state, and plasma clouds in the reaction box are subjected to internal circulation under the action of electromagnetic force.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to the technical field of microwave plasma processing, in particular to a microwave plasma processing device. Background technique

[0002] Microwave plasma processing is an emerging special processing method. Microwave plasma has high ionization degree, high electron temperature, electron density, no electrode pollutants, and proper plasma control will not cause pollution on the microwave path. Therefore, it is widely used in the industrial manufacture of diamond films.

[0003] The plasma is in the form of a cloud, also called a plasma cloud. In the vapor deposition process, the plasma cloud needs to maintain a high temperature state. Once the temperature drops, the ionization will drop significantly, and the components will change from the plasma state to the conventional gas molecular state. It is beneficial to the deposition and formation of diamond film, and this effect mostly occurs at the edge of the plasma cloud, which i...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More