Microwave plasma processing device

Abstract

The invention discloses a microwave plasma processing device which comprises a microwave source, a microwave circulator, a power regulator, a rectangular waveguide, a tuner, an antenna, a reaction box, a gas mixing system and a vacuum system, the microwave source is connected with the microwave circulator, an emitting end of the microwave circulator is connected with the rectangular waveguide, the power regulator is connected with the emitting end of the microwave circulator and the microwave source, the power regulator is used for regulating the excitation power of the microwave source according to microwave emission power, the tuner is arranged on the side wall of the rectangular waveguide, the reaction box is mounted on the side surface of the tail end of the rectangular waveguide, the antenna is inserted into the rectangular waveguide and the top end of the reaction box, the gas mixing system injects working medium gas into the reaction box, the vacuum system vacuumizes the interior of the reaction box and keeps the interior of the reaction box in a vacuum state, and plasma clouds in the reaction box are subjected to internal circulation under the action of electromagnetic force.

Description

technical field [0001] The invention relates to the technical field of microwave plasma processing, in particular to a microwave plasma processing device. Background technique [0002] Microwave plasma processing is an emerging special processing method. Microwave plasma has high ionization degree, high electron temperature, electron density, no electrode pollutants, and proper plasma control will not cause pollution on the microwave path. Therefore, it is widely used in the industrial manufacture of diamond films. [0003] The plasma is in the form of a cloud, also called a plasma cloud. In the vapor deposition process, the plasma cloud needs to maintain a high temperature state. Once the temperature drops, the ionization will drop significantly, and the components will change from the plasma state to the conventional gas molecular state. It is beneficial to the deposition and formation of diamond film, and this effect mostly occurs at the edge of the plasma cloud, which i...

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Problems solved by technology

[0003] The plasma is in the form of a cloud, also called a plasma cloud. In the vapor deposition process, the plasma cloud needs to maintain a high temperature state. Once the temperature drops, the ionization will drop significantly, and the components will change from the plasma state to the conventional gas molecular state. It is beneficial to the deposition and formation of diamond film, and this effect mostly occurs at the edge of the plasma cloud, which is the junction of the plasma cloud and the surrounding gas, where heat exchange is performed and material exchange is less, and the heat provided by microwaves is easily lost. However, it affects the stability of the plasma state. Once the phase transition occurs, the diamond film here is no longer uniform and dense.

[0004] In the prior art, the range of the plasma is often adjusted by adjusting physical quantities or dimensions such as the height of the resonator, microwave power, antenna height, etc., so as to obtain a diamond film that meets the area requirements on the expected work base surface. Such an adjustment method First, it is difficult to control. In the area of ​​the generated diamond film, the edges that meet the uniformity requirements are uneven, with many burrs, and need to be trimmed to meet the use. Trimming will cut off a part of the area that meets the thickness composite requirements, wasting production resources

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