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Perovskite light-emitting diode and preparation method thereof

A light-emitting diode and perovskite technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of reduced fluorescence quantum yield, increased non-radiative recombination, and increased non-radiative recombination probability, achieving high External quantum efficiency, the effect of suppressing non-radiative recombination

Active Publication Date: 2021-07-23
CHANGCHUN INST OF APPLIED CHEMISTRY - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

A wider quasi-two-dimensional order distribution can lead to a decrease in the fluorescence quantum yield of the film, because the grain size of the lower-order perovskite phase in the film is relatively small, and more grain boundaries are formed leading to an increase in the density of defect states. Large, non-radiative recombination intensifies; at the same time, the higher-order perovskite phase in the film will have lower exciton binding energy and quantum confinement ability, excitons are prone to dissociation and free diffusion of carriers leads to radiative recombination Reduced rate, increased chance of defect-induced non-radiative recombination

Method used

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  • Perovskite light-emitting diode and preparation method thereof
  • Perovskite light-emitting diode and preparation method thereof
  • Perovskite light-emitting diode and preparation method thereof

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preparation example Construction

[0048] The present invention also provides a method for preparing a perovskite light-emitting diode, the steps of which are as follows:

[0049] (1) Clean the substrate

[0050] Place the glass substrate 1 with the ITO conductive film 2 in deionized water, acetone and isopropanol in sequence, ultrasonically clean it for 15-30 minutes, and then dry it;

[0051] (2) Preparation of PVK hole transport layer 3 by spin coating method

[0052] Preparation concentration is the PVK chlorobenzene solution of 5~15mg / mL, then this solution is spin-coated on the ITO conductive thin film 2 surface that step (1) obtains, and spin-coating speed is 2000~4500 rev / min, and spin-coating time is 30~ 50 seconds; then annealing at 100-150° C. for 20-40 minutes, and finally cooling to room temperature; obtaining a PVK hole transport layer 3 with a thickness of 20-40 nm;

[0053] (3) Preparation of nanoparticle and / or cryptane-doped perovskite light-emitting layer by spin coating method 4

[0054] ...

Embodiment 1

[0060] The glass substrate 1 with the ITO conductive film 2 (thickness is 100nm) is placed in deionized water, acetone and isopropanol successively, ultrasonically cleaned respectively for 20 minutes, and then dried;

[0061] Prepare a PVK chlorobenzene solution with a concentration of 10mg / mL, and then spin-coat the solution on the surface of the ITO conductive film 2 at a spin-coating speed of 4000 rpm and a spin-coating time of 40 seconds; then anneal at 120°C for 30 minutes , and finally cooled to room temperature; the obtained PVK hole transport layer 3 has a thickness of 25nm;

[0062] 0.2mmol of PbBr 2 , 0.16mmol of FABr, 0.08mmol of PEABr and 0.02mmol of CH 3 NH 3 Cl was dissolved in 0.5mL DMF and 0.5mL DMSO mixed solution, stirred at room temperature for 2 hours; then the obtained solution was spin-coated on the surface of PVK hole transport layer 3, the spin-coating speed was 7000 rpm, and the spin-coating time was 40 seconds , adding 0.15 mL of ethyl acetate drop...

Embodiment 2

[0065]The glass substrate 1 with the ITO conductive film 2 (thickness is 100nm) is placed in deionized water, acetone and isopropanol successively, ultrasonically cleaned respectively for 20 minutes, and then dried;

[0066] Prepare a PVK chlorobenzene solution with a concentration of 10mg / mL, and then spin-coat the solution on the surface of the ITO conductive film 2 at a spin-coating speed of 4000 rpm and a spin-coating time of 40 seconds; then anneal at 120°C for 30 minutes , and finally cooled to room temperature; the obtained PVK hole transport layer 3 has a thickness of 25nm;

[0067] ZrO with a grain size of 20 nm 2 The nanoparticles are dispersed in DMF, and 0.4mg / mL of ZrO 2 DMF dispersion of nanoparticles, ultrasonically dispersed for 5 hours; 0.2mmol of PbBr 2 , 0.16mmol of FABr, 0.08mmol of PEABr and 0.02mmol of CH 3 NH 3 Cl was dissolved in 0.5mL nanoparticle DMF dispersion liquid and 0.5mL DMSO mixed liquid, and stirred at room temperature for 2 hours; then t...

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Abstract

The invention provides a perovskite light-emitting diode and a preparation method thereof, and belongs to the technical field of light-emitting diodes. The perovskite light-emitting diode sequentially comprises a glass substrate with an ITO conductive thin film, a hole transport layer, a nano particle and / or cryptand doped quasi-two-dimensional perovskite light-emitting layer, an electron transport layer, a modification layer, and an electrodefrom bottom to top. The invention also provides a preparation method of the perovskite light-emitting diode. According to the invention, the light-emitting layer of the perovskite light-emitting diode is the nano-particle and / or cryptand doped quasi-two-dimensional perovskite film, the structural order distribution in the quasi-two-dimensional perovskite film can be narrowed through doping, the occurrence of lower or higher order phases is reduced, and thus non-radiative recombination in the film is inhibited; and based on the mechanism, a light emitting diode device with higher external quantum efficiency (EQE) is finally obtained.

Description

technical field [0001] The invention belongs to the technical field of light-emitting diodes, and in particular relates to a perovskite light-emitting diode with a quasi-two-dimensional perovskite layer doped with nanoparticles and / or cryptane and a preparation method thereof. Background technique [0002] Traditional organic-inorganic hybrid three-dimensional perovskite materials have the advantages of high carrier mobility and low trap state density, and have been widely used in the field of photovoltaics. However, due to its low exciton binding energy and difficulty in restricting the free diffusion of carriers, high radiative recombination efficiency cannot be obtained, making it unable to be directly applied in light-emitting diodes. The construction of quasi-two-dimensional structure perovskite is an effective way to improve the exciton binding energy of perovskite materials, enhance quantum confinement, and thus improve the efficiency of radiative recombination. The ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/54H01L51/56
CPCH10K71/15H10K71/12H10K85/60H10K85/6572Y02E10/549
Inventor 秦川江张德重
Owner CHANGCHUN INST OF APPLIED CHEMISTRY - CHINESE ACAD OF SCI
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